Abstract: A display device includes a first substrate. A transistor is disposed on the first substrate. A light-emitting element is connected to the transistor. An insulating layer is disposed between the transistor and the light-emitting element. A second substrate at least partially overlaps the first substrate. A color conversion layer is disposed on the second substrate. The insulating layer includes a first insulating layer and a second insulating layer. A distance between the first insulating layer and the first substrate is less than a distance between the second insulating layer and the first substrate. The first insulating layer includes a light blocking material.

Abstract: An anode active material for a secondary battery includes a carbon-based active material, and silicon-based active material particles doped with magnesium. At least some of the silicon-based active material particles include pores, and a volume ratio of pores having a diameter of 50 nm or less among the pores is 2% or less based on a total volume of the silicon-based active material particles.

Abstract: The present invention relates to a composition for preventing or treating heart failure including TREM2 protein or a fragment thereof as an active ingredient. The TREM2 protein or fragment thereof according to the present invention can be prepared as a soluble form and used as an injection, and when injected into the body, it promotes functional and structural improvement of the infarcted heart, and is effective for preventing or treating heart failure, and more specifically, it can be advantageously used for preventing or treating heart failure that appears as a sequela of myocardial infarction.

Abstract: The present invention relates to an antigen-binding molecule comprising a heavy chain variable region comprising a heavy-chain complementarity-determining region 1 (HCDR1) comprising an amino acid sequence represented by Sequence No. 1, an HCDR2 comprising an amino acid sequence represented by Sequence No. 2, and an HCDR3 comprising an amino acid sequence represented by Sequence No. 3; a light-chain variable region comprising a light-chain complementarity-determining region 1 (LCDR1) comprising an amino acid sequence represented by Sequence No. 4, an LCDR2 comprising an amino acid sequence represented by Sequence No. 5, and an LCDR3 comprising an amino acid sequence represented by Sequence No. 6; wherein the antigen-binding molecule is a T cell receptor (TCR); and to a cell line expressing the same.

Abstract: The technology and implementations disclosed in this patent document generally relate to a lithium secondary battery including: a first unit cell including a first anode including a 1-1 anode mixture layer and a 1-2 anode mixture layer on the 1-1 anode mixture layer, and a second unit cell including a second anode including a 2-1 anode mixture layer and a 2-2 anode mixture layer on the 2-1 anode mixture layer, wherein a weight ratio of the silicon-based active material in the 1-2 anode mixture layer is greater than a weight ratio of the silicon-based active material in the 1-1 anode mixture layer, and a weight ratio of the silicon-based active material in the 2-2 anode mixture layer is less than or equal to a weight ratio of the silicon-based active material in the 2-1 anode mixture layer.

Abstract: An anode for a lithium secondary battery includes an anode current collector, and an anode active material layer formed on at least one surface of the anode current collector. The anode active material layer includes a carbon-based active material, a first silicon-based active material doped with magnesium and a second silicon-based active material not doped with magnesium. A content of the first silicon-based active material is in a range from 2 wt % to 20 wt % based on a total weight of the anode active material layer.

Abstract: In some implementations, the anode includes a current collector, a first anode mixture layer formed on at least one surface of the current collector, and a second anode mixture layer formed on the first anode mixture layer. The first anode mixture layer and the second anode mixture layer include a carbon-based active material, respectively. The first anode mixture layer includes a first binder, a first silicon-based active material, and a first conductive material. The second anode mixture layer includes a second binder, a second silicon-based active material, and a second conductive material. Contents of the first conductive material and the second conductive material are different from each other with respect to the total combined weight of the first anode mixture layer and the second anode mixture layer. Types of the first silicon-based active material and the second silicon-based active material are different from each other.

Abstract: An embodiment of the present invention relates to a cylindrical secondary battery comprising: a cylindrical can having one opened end to form an opening; an electrode assembly accommodated in the cylindrical can; and a cap assembly including a vent plate which is disposed on the outermost side in the direction away from the opening and which has at least one notch, a cap down which is disposed to be spaced apart from the vent plate in the direction of the opening and which is electrically connected to the electrode assembly, a support plate which is disposed between the vent plate and the cap down so as to be coupled to the vent plate, and an insulating member which is inserted between the support plate and the cap down to insulate the support plate and the cap down from each other, wherein, when the gas inside the can is discharged toward the opening, the vent plate is ruptured to be separated from the cap assembly.

Abstract: Provided herein may be a memory device and a memory system having the memory device. The memory system includes a memory device including a plurality of memory blocks, each including chunk blocks, and page buffer blocks respectively coupled to the chunk blocks, and a memory controller configured to, based on chunk block status information indicating whether each of the chunk blocks is one of a pass chunk block and a bad chunk block, control the memory device to perform an operation corresponding to a command on merged pass chunk blocks obtained by merging pass chunk blocks coupled to different page buffer blocks among pass chunk blocks included in memory blocks, each of the memory blocks including both the pass chunk block and the bad chunk block.

Abstract: A memory device which can perform various memory tests without increasing a size of the memory device. The memory device includes: a first pad for receiving external ROM data from a memory controller; a second pad for receiving an external clock signal corresponding to the external ROM data from the memory controller; and a control logic connected to the first pad and the second pad and configured to perform an operation corresponding to the external ROM data in response to the external clock signal in a test mode.

Abstract: An integrated circuit includes a test control circuit, a driving circuit, and a test detection circuit. The test control circuit generates a test command signal and a test address signal corresponding to a test operation. The driving circuit performs the test operation by utilizing a test internal voltage, which is generated based on the test command signal. The test detection circuit compares the test address signal with target address information to output the test internal voltage.

Abstract: Provided herein may be a memory device and a memory system having the memory device. The memory system includes a memory device including a plurality of memory blocks, each including chunk blocks, and page buffer blocks respectively coupled to the chunk blocks, and a memory controller configured to, based on chunk block status information indicating whether each of the chunk blocks is one of a pass chunk block and a bad chunk block, control the memory device to perform an operation corresponding to a command on merged pass chunk blocks obtained by merging pass chunk blocks coupled to different page buffer blocks among pass chunk blocks included in memory blocks, each of the memory blocks including both the pass chunk block and the bad chunk block.

Abstract: A storage device, and a method of operating the storage device, includes a plurality of memory devices configured to store peak power information including information about a plurality of peak power periods and information about IDs respectively corresponding to the plurality of peak power periods. The storage device also includes a memory controller configured to assign an ID to each of the plurality of memory devices and control the memory devices so that one or more memory devices having an identical ID corresponding to a target period, among the plurality of peak power periods, perform a memory operation at peak power.

Abstract: An integrated circuit includes a test counting circuit, a test information storage circuit, a sequence control circuit and a driving circuit. The test counting circuit generates a counting address signal. The test information storage circuit stores a test control value and outputs the test control value based on the counting address signal. The sequence control circuit changes an output sequence of the test control value based on a sequence control signal and outputs a final test control value based on the test control value or a target control value. The driving circuit performs a pre-set test operation based on the final test control value.

Abstract: The present technology includes a memory device which includes a plurality of planes in which data is stored, a peripheral circuit configured to perform operations on the plurality of planes, micro-control circuits configured to control the peripheral circuit so that the operations on the plurality of planes are independently performed, and a memory manager including a control memory in which different control codes for controlling the peripheral circuit are stored, and configured to output the control codes to the micro-control circuits, wherein the memory manager is configured to sequentially output a selected control code among the control codes to the micro-control circuits respectively corresponding to the planes.

Abstract: The present technology includes a test system. The test system includes a memory device configured to store an initial setting value for performing normal operations, and a test device configured to generate an operation command set including a test value that is a result of a test operation of the memory device, and configured to transmit the operation command set to the memory device. The memory device performs an operation by using the test value based on the operation command set, replaces the initial setting value with an operation value that is generated as a result of the operation, and stores the operation value.

Abstract: A memory device includes an input/output circuit configured to receive a status read command from a memory controller, a toggle counter configured to count a number of toggles of a signal received from the memory controller, and a status register configured to store status information of the memory device and configured to output the status information to the input/output circuit. The memory device also includes a status output controller configured to determine whether the number of toggles counted by the toggle counter corresponds to a reference number of toggles and configured to control the status register to transmit the status information to the memory controller through the input/output circuit, in response to the status read command.

Abstract: A memory device which can perform various memory tests without increasing a size of the memory device. The memory device includes: a first pad for receiving external ROM data from a memory controller; a second pad for receiving an external clock signal corresponding to the external ROM data from the memory controller; and a control logic connected to the first pad and the second pad and configured to perform an operation corresponding to the external ROM data in response to the external clock signal in a test mode.

Abstract: A memory device includes: memory cells; an operation mode determiner for determining any one of a normal operation mode and a memory communication operation mode of communicating data with another memory device; a pad control signal generator for generating a pad control signal for determining a pad to receive a signal corresponding to a data movement command of the memory controller according to the determined operation mode; a pad controller for receiving the signal through the determined pad according to the pad control signal; an internal command generator for generating an internal operation command corresponding to the data movement command according to the determined operation mode; and an operation controller for performing one of a read operation of reading first target data from the memory cells and a program operation of storing second target data in the memory cells, based on the internal operation command.

Abstract: The present technology includes a memory device which includes a plurality of planes in which data is stored, a peripheral circuit configured to perform operations on the plurality of planes, micro-control circuits configured to control the peripheral circuit so that the operations on the plurality of planes are independently performed, and a memory manager including a control memory in which different control codes for controlling the peripheral circuit are stored, and configured to output the control codes to the micro-control circuits, wherein the memory manager is configured to sequentially output a selected control code among the control codes to the micro-control circuits respectively corresponding to the planes.