Patents by Inventor Seyed-Hossein Hashemi

Seyed-Hossein Hashemi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10760944
    Abstract: A gas flow metrology system for a substrate processing system includes N primary valves selectively flowing gas from N gas sources, respectively, where N is an integer. N mass flow controllers are connected to the N primary valves, respectively, to flow N gases from the N gas sources, respectively. N secondary valves selectively flow gas from the N mass flow controllers, respectively. A gas flow path connects the N secondary valves to a flow metrology system located remote from the N secondary valves, wherein the gas flow path includes a plurality of gas lines. A controller is configured to perform a hybrid flow metrology by selectively using a first flow metrology and a second flow metrology that is different from the first flow metrology to determine an actual flow rate for a selected gas at a desired flow rate from one of the N mass flow controllers.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: September 1, 2020
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Evangelos T. Spyropoulos, Piyush Agarwal, James Leung, Seyed Hossein Hashemi Ghermezi, Iqbal Shareef
  • Publication number: 20200049547
    Abstract: A gas flow metrology system for a substrate processing system includes N primary valves selectively flowing gas from N gas sources, respectively, where N is an integer. N mass flow controllers are connected to the N primary valves, respectively, to flow N gases from the N gas sources, respectively. N secondary valves selectively flow gas from the N mass flow controllers, respectively. A gas flow path connects the N secondary valves to a flow metrology system located remote from the N secondary valves, wherein the gas flow path includes a plurality of gas lines. A controller is configured to perform a hybrid flow metrology by selectively using a first flow metrology and a second flow metrology that is different from the first flow metrology to determine an actual flow rate for a selected gas at a desired flow rate from one of the N mass flow controllers.
    Type: Application
    Filed: August 7, 2018
    Publication date: February 13, 2020
    Inventors: Evangelos T. SPYROPOULOS, Piyush AGARWAL, James LEUNG, Seyed Hossein HASHEMI GHERMEZI, Iqbal SHAREEF
  • Patent number: 6917815
    Abstract: The present invention discloses an architecture for a concurrent dual-band high-frequency receiver. The invention combines a concurrent dual-band front-end subsystem having a dual-band antenna, dual-band pre-amplifier filter and concurrent dual-band LNA with a novel image rejection downconverter to provide the functions of a typical receiver, including reception, amplification and downconversion of a signal in two discrete desired frequency bands simultaneously.
    Type: Grant
    Filed: December 19, 2001
    Date of Patent: July 12, 2005
    Assignee: California Institute of Technology
    Inventors: Seyed-Ali Hajimiri, Seyed-Hossein Hashemi
  • Patent number: 6674337
    Abstract: The present invention relates to a concurrent multi-band amplifiers and to a monolithic, concurrent multi-band low noise amplifier (LNA). The inventive LNA includes a three-terminal active device, such as a transistor with a characteristic transconductance, gm, disposed on a semiconductor substrate. The active device has a control input terminal, an output terminal, and a current source terminal. The amplifier also includes an input impedance matching network system, Zin, and an output load network. Zin simultaneously and independently matches the frequency-dependent input impedance of the three-terminal active device to a predetermined characteristic impedance at two or more discrete frequency bands. The output load network simultaneously provides a voltage gain, Av, to an input signal at the amplifier input at each of the two or more discrete frequency bands.
    Type: Grant
    Filed: March 28, 2001
    Date of Patent: January 6, 2004
    Assignee: California Institute of Technology
    Inventors: Seyed-Hossein Hashemi, Seyed-Ali Hajimiri
  • Publication number: 20030206076
    Abstract: The present invention relates to a concurrent multi-band amplifiers and to a monolithic, concurrent multi-band low noise amplifier (LNA). The inventive LNA includes a three-terminal active device, such as a transistor with a characteristic transconductance, gm, disposed on a semiconductor substrate. The active device has a control input terminal, an output terminal, and a current source terminal. The amplifier also includes an input impedance matching network system, Zin, and an output load network. Zin simultaneously and independently matches the frequency-dependent input impedance of the three-terminal active device to a predetermined characteristic impedance at two or more discrete frequency bands. The output load network simultaneously provides a voltage gain, Av, to an input signal at the amplifier input at each of the two or more discrete frequency bands.
    Type: Application
    Filed: May 16, 2003
    Publication date: November 6, 2003
    Inventors: Seyed-Hossein Hashemi, Seyed-Ali Hajimiri
  • Publication number: 20020173337
    Abstract: The present invention discloses an architecture for a concurrent dual-band high-frequency receiver. The invention combines a concurrent dual-band front-end subsystem having a dual-band antenna, dual-band pre-amplifier filter and concurrent dual-band LNA with a novel image rejection downconverter to provide the functions of a typical receiver, including reception, amplification and downconversion of a signal in two discrete desired frequency bands simultaneously.
    Type: Application
    Filed: December 19, 2001
    Publication date: November 21, 2002
    Inventors: Seyed-Ali Hajimiri, Seyed-Hossein Hashemi
  • Publication number: 20020030545
    Abstract: The present invention relates to a concurrent multi-band amplifiers and to a monolithic, concurrent multi-band low noise amplifier (LNA). The inventive LNA includes a three-terminal active device, such as a transistor with a characteristic transconductance, gm, disposed on a semiconductor substrate. The active device has a control input terminal, an output terminal, and a current source terminal. The amplifier also includes an input impedance matching network system, Zin, and an output load network. Zin simultaneously and independently matches the frequency-dependent input impedance of the three-terminal active device to a predetermined characteristic impedance at two or more discrete frequency bands. The output load network simultaneously provides a voltage gain, Av, to an input signal at the amplifier input at each of the two or more discrete frequency bands.
    Type: Application
    Filed: March 28, 2001
    Publication date: March 14, 2002
    Inventors: Seyed-Hossein Hashemi, Seyed-Ali Hajimiri