Abstract: Method of using improved compositions for conditioning silicon surfaces during the manufacture of photovoltaic devices. Used for removing particles, organic contamination, and unwanted metals from these surfaces. Also used for removing a thin layer of silicon as required for damage removal or texturing. These conditioning and surface preparation compositions comprise one or more water soluble strongly basic components capable of producing a pH greater than 10, one or more water soluble organic amines, one or more chelating agents, and water.

Abstract: Aqueous cleaning compositions comprising a tertiary organic amine, an organic acid, a non-metallic fluoride salt, a corrosion inhibitor, e.g., ascorbic acid or its derivatives alone or in combination, balance water, effective to remove plasma processing residues (sidewall polymer) which include metal-organic complexes and/or inorganic salts, oxides, hydroxides or complexes which form films or residues either alone or in combination with the organic polymer resins. These compositions clean effectively at low temperatures without etching metal or dielectric layers, including low-? dielectric materials.

Abstract: Improved cleaning compositions for removing particles, organic contamination, photoresist, post-ash residue, coatings, and other materials from metal and silicon surfaces including substrates present during the manufacture of integrated circuits, liquid crystal displays, and photovoltaic devices. The cleaning and surface preparation compositions comprise one or more water soluble strongly basic components, one or more water soluble organic amines, one or more water soluble oxidizing agents, balance water. Optional components can include corrosion inhibitors, surfactants and chelating agents.

Abstract: A cleaning solution is provided for cleaning metal-containing microelectronic substrates, particularly for post etch, via formation and post CMP cleaning. The cleaning solution consists of a quaternary ammonium hydroxide, an organic amine, and water. A preferred cleaning solution consists of tetramethylammonium hydroxide, monoethanolamine, and water. The pH of cleaning solution is greater than 10.

Abstract: A cleaning solution is provided for cleaning metal-containing microelectronic substrates, particularly for post etch, via formation and post CMP cleaning. The cleaning solution consists of a quaternary ammonium hydroxide, an organic amine, and water. A preferred cleaning solution consists of tetramethylammonium hydroxide, monoethanolamine, and water. The pH of cleaning solution is greater than 10.

Abstract: A cleaning solution is provided for cleaning metal-containing microelectronic substrates, particularly for post etch, via formation and post CMP cleaning. The cleaning solution consists of a quaternary ammonium hydroxide, an organic amine, and water. A preferred cleaning solution consists of tetramethylammonium hydroxide, monoethanolamine, and water. The pH of cleaning solution is greater than 10.

Abstract: A cleaning solution is provided for cleaning copper-containing microelectronic substrates, particularly for post etch, post-CMP or Via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethanolamine, gallic acid, and water. The pH of cleaning solution is greater than 10.

Abstract: An aqueous cleaning composition comprising an alkanolamine, a tetraalkylammonium hydroxide, nonmetallic fluoride salt, a corrosion inhibitor, e.g. ascorbic acid or its derivatives alone or in combination, balance water. Such cleaning compositions are effective to remove residues from plasma process generated organic, metal-organic materials, inorganic salts, oxides, hydroxides or complexes in combination with or exclusive of organic photoresist films at low temperatures with little corrosion of copper and attack of dielectric substrates.

Abstract: A cleaning solution for cleaning microelectronic substrates, particularly for post-CMP or via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, optionally an organic acid, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethylanolamine, gallic acid ascorbic acid, and water with the alkalinity of the cleaning solution greater than 0.073 milliequivalents base per gram of solution.

Abstract: An aqueous cleaning composition comprising an alkanolamine, a tetraalkylammonium hydroxide, nonmetallic fluoride salt, a corrosion inhibitor, e.g. ascorbic acid or its derivatives alone or in combination, balance water. Such cleaning compositions are effective to remove residues from plasma process generated organic, metal-organic materials, inorganic salts, oxides, hydroxides or complexes in combination with or exclusive of organic photoresist films at low temperatures with little corrosion of copper and attack of dielectric substrates.

Abstract: An aqueous cleaning composition comprising an alkanolamine, a tetraalkylammonium hydroxide, nonmetallic fluoride salt, a corrosion inhibitor, e.g. ascorbic acid or its derivatives alone or in combination, balance water. Such cleaning compositions are effective to remove residues from plasma process generated organic, metal-organic materials, inorganic salts, oxides, hydroxides or complexes in combination with or exclusive of organic photoresist films at low temperatures with little corrosion of copper and attack of dielectric substrates.

Abstract: An aqueous cleaning composition comprising an alkanolamine, a tetraalkylammonium hydroxide, nonmetallic fluoride salt, a corrosion inhibitor, e.g. ascorbic acid or its derivatives alone or in combination, balance water. Such cleaning compositions are effective to remove residues from plasma process generated organic, metal-organic materials, inorganic salts, oxides, hydroxides or complexes in combination with or exclusive of organic photoresist films at low temperatures with little corrosion of copper and attack of dielectric substrates.

Abstract: A cleaning solution for cleaning microelectronic substrates, particularly for post-CMP or via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethylanolamine, ascorbic acid, and water with the alkalinity of the cleaning solution greater than 0.073 milliequivalents base per gram of solution.

Abstract: A cleaning solution for cleaning microelectronic substrates, particularly for post-CMP or via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, optionally an organic acid, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethylanolamine, gallic acid ascorbic acid, and water with the alkalinity of the cleaning solution greater than 0.073 milliequivalents base per gram of solution.

Abstract: A cleaning solution is provided for cleaning copper-containing microelectronic substrates, particularly for post-CMP or Via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethanolamine, gallic acid, and water. The pH of the cleaning solution is greater than 10.