Patents by Inventor Shamouil Shamouilian
Shamouil Shamouilian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7399707Abstract: A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.Type: GrantFiled: January 13, 2005Date of Patent: July 15, 2008Assignee: Applied Materials, Inc.Inventors: Padmanabhan Krishnaraj, Pavel Ionov, Canfeng Lai, Michael Santiago Cox, Shamouil Shamouilian
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Patent number: 7363876Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.Type: GrantFiled: January 30, 2004Date of Patent: April 29, 2008Assignee: Applied Materials, Inc.Inventors: Canfeng Lai, Michael S. Cox, Peter K. Loewenhardt, Tsutomu Tanaka, Shamouil Shamouilian
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Publication number: 20070022958Abstract: An effluent abatement system 200 that may be used to abate F2 gas content of effluent exhausted from a process chamber 35, such as effluent from a CVD chamber cleaning process, includes a catalytic reactor 250 to reduce the content of F2 in the effluent 100. The system may further include a prescrubber 230 to add reactive gases to the effluent 100 and/or to treat the effluent 100 prior to treatment in the catalytic reactor 250. Alternatively reactive gases can be added to the effluent 100 by a gas source 220.Type: ApplicationFiled: April 24, 2006Publication date: February 1, 2007Inventors: Shamouil Shamouilian, Mehran Moalem, Tony Kaushal
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Publication number: 20050124166Abstract: A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.Type: ApplicationFiled: January 13, 2005Publication date: June 9, 2005Applicants: Applied Materials, Inc., A Delaware corporationInventors: Padmanabhan Krishnaraj, Pavel Ionov, Canfeng Lai, Michael Cox, Shamouil Shamouilian
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Patent number: 6869880Abstract: A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.Type: GrantFiled: January 24, 2002Date of Patent: March 22, 2005Assignee: Applied Materials, Inc.Inventors: Padmanabhan Krishnaraj, Pavel Ionov, Canfeng Lai, Michael Santiago Cox, Shamouil Shamouilian
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Patent number: 6863019Abstract: A method of cleaning a semiconductor fabrication processing chamber involves recirculation of cleaning gas components. Consequently, input cleaning gas is utilized efficiently, and undesirable emissions are reduced. The method includes flowing a cleaning gas to an inlet of a processing chamber, and exposing surfaces of the processing chamber to the cleaning gas to clean the surfaces, thereby producing a reaction product. The method further includes removing an outlet gas including the reaction product from an outlet of the processing chamber, separating at least a portion of the reaction product from the outlet gas, and recirculating a portion of the outlet gas to the inlet of the processing chamber.Type: GrantFiled: May 30, 2002Date of Patent: March 8, 2005Assignee: Applied Materials, Inc.Inventors: Shamouil Shamouilian, Canfeng Lai, Michael Santiago Cox, Padmanabhan Krishnaraj, Tsutomu Tanaka, Sebastien Raoux, Peter I. Porshnev, Thomas Nowak
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Patent number: 6824748Abstract: A substrate processing apparatus has a process chamber with a substrate support, a gas supply to introduce a gas into the chamber, and a gas energizer to energize the gas in the processing of a substrate, thereby generating an effluent gas. A catalytic reactor has an effluent gas inlet to receive the effluent gas and an effluent gas outlet to exhaust treated effluent gas. A heater is adapted to heat the effluent gas in the catalytic reactor. The heated catalytic treatment of the effluent gas abates the hazardous gases in the effluent. An additive gas source and a prescrubber may also be used to further treat the effluent.Type: GrantFiled: June 1, 2001Date of Patent: November 30, 2004Assignee: Applied Materials, Inc.Inventors: Tony S. Kaushal, Shamouil Shamouilian, Harshad Borgaonkar, Kwok Manus Wong, Michael G. Chafin, Ashish Bhatnagar
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Publication number: 20040226511Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.Type: ApplicationFiled: January 30, 2004Publication date: November 18, 2004Applicant: Applied Materials, Inc.Inventors: Canfeng Lai, Michael S. Cox, Peter K. Loewenhardt, Tsutomu Tanaka, Shamouil Shamouilian
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Publication number: 20040226512Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.Type: ApplicationFiled: January 30, 2004Publication date: November 18, 2004Applicant: Applied Materials, Inc.Inventors: Canfeng Lai, Michael S. Cox, Peter K. Loewenhardt, Tsutomu Tanaka, Shamouil Shamouilian
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Publication number: 20040226658Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.Type: ApplicationFiled: January 30, 2004Publication date: November 18, 2004Applicant: Applied Materials, Inc.Inventors: Canfeng Lai, Michael S. Cox, Peter K. Loewenhardt, Tsutomu Tanaka, Shamouil Shamouilian
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Publication number: 20040190215Abstract: An electrostatic chuck comprises a dielectric member comprising (i) a first layer comprising a semiconductive material, and (ii) a second layer over the first layer, the second layer comprising an insulative material. The insulative material has a higher electrical resistance than the semiconductive material. An electrode in the dielectric member is chargeable to generate an electrostatic force. The chuck is useful to hold substrates, such as semiconductor wafers, during their processing in plasma processes.Type: ApplicationFiled: January 28, 2004Publication date: September 30, 2004Applicant: Applied Materials, Inc.Inventors: Edwin C. Weldon, Kenneth S. Collins, Arik Donde, Brian Lue, Dan Maydan, Robert J. Steger, Timothy Dyer, Ananda H. Kumar, Alexander M. Veytser, Kadthala R. Narendrnath, Semyon L. Kats, Arnold Kholodenko, Shamouil Shamouilian, Dennis S. Grimard
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Publication number: 20040182517Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.Type: ApplicationFiled: January 30, 2004Publication date: September 23, 2004Applicant: Applied Materials, Inc.Inventors: Canfeng Lai, Michael S. Cox, Peter K. Loewenhardt, Tsutomu Tanaka, Shamouil Shamouilian
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Publication number: 20040185610Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.Type: ApplicationFiled: January 30, 2004Publication date: September 23, 2004Applicant: Applied Materials, Inc.Inventors: Canfeng Lai, Michael S. Cox, Peter K. Loewenhardt, Tsutomu Tanaka, Shamouil Shamouilian
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Patent number: 6755150Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.Type: GrantFiled: April 20, 2001Date of Patent: June 29, 2004Assignee: Applied Materials Inc.Inventors: Canfeng Lai, Michael S. Cox, Peter K. Loewenhardt, Tsutomu Tanaka, Shamouil Shamouilian
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Patent number: 6730175Abstract: A substrate support assembly for supporting a substrate during processing is provided. In one embodiment, a support assembly includes a ceramic body having an embedded heating element and a base plate. The base plate and the ceramic body define a channel therebetween adapted to supply purge gas to a perimeter of a substrate disposed on the support assembly. The base plate is fastened to the body by brazing, adhering, fastening, press fitting or by mating engaging portions of a retention device such as a bayonet fitting.Type: GrantFiled: January 22, 2002Date of Patent: May 4, 2004Assignee: Applied Materials, Inc.Inventors: Joseph Yudovsky, Salvador P. Umotoy, Shamouil Shamouilian, Ron Rose, Rita Dukes, Xiaoxiong Yuan
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Patent number: 6726804Abstract: A plasma processing apparatus and a method of operating a plasma processing apparatus are disclosed. In one embodiment, a first RF signal at a carrier frequency and a second RF signal at a second frequency are generated. An amplitude modulated signal is formed by modulating the first RF signal with the second RF signal. A plasma is generated within the plasma processing chamber using the amplitude modulated signal. Generating plasma using a frequency modulated signal is also disclosed.Type: GrantFiled: January 22, 2001Date of Patent: April 27, 2004Inventors: Liang-Guo Wang, Kwok M. Wong, Shamouil Shamouilian, Kartik Ramaswamy
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Patent number: 6721162Abstract: An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.Type: GrantFiled: March 12, 2002Date of Patent: April 13, 2004Assignee: Applied Materials Inc.Inventors: Edwin C. Weldon, Kenneth S. Collins, Arik Donde, Brian Lue, Dan Maydan, Robert J. Steger, Timothy Dyer, Ananda H. Kumar, Alexander M. Veytser, Kadthala R. Narendrnath, Semyon L. Kats, Arnold Kholodenko, Shamouil Shamouilian, Dennis S. Grimard
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Patent number: 6712020Abstract: A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity.Type: GrantFiled: June 12, 2002Date of Patent: March 30, 2004Assignee: Applied Materials Inc.Inventors: Michael S. Cox, Canfeng Lai, Robert B. Majewski, David P. Wanamaker, Christopher T. Lane, Peter Loewenhardt, Shamouil Shamouilian, John P. Parks
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Patent number: 6689252Abstract: An apparatus and method for reducing hazardous gases exhausted from a process chamber 25 includes an effluent plasma reactor 210 and a downstream catalytic reactor 220. The reactor 210 may include a consumable liner that reacts with the energized effluent to remove the hazardous gases. The catalytic reactor 220 may also include catalytic surfaces 227 in a honeycomb, foam, or pellet structure 225 to catalyze reactions that further reduce hazardous gas content.Type: GrantFiled: July 28, 1999Date of Patent: February 10, 2004Assignee: Applied Materials, Inc.Inventors: Shamouil Shamouilian, Tony S. Kaushal
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Patent number: 6682627Abstract: A substrate processing chamber has a substrate support, a gas supply, a gas exhaust, a gas energizer, and a wall about the substrate support, the wall having a porous ceramic material at least partially infiltrated with a fluorinated polymer, whereby a substrate on the substrate support may be processed by gas introduced by the gas supply, energized by the gas energizer, and exhausted by the gas exhaust.Type: GrantFiled: September 24, 2001Date of Patent: January 27, 2004Assignee: Applied Materials, Inc.Inventors: Shamouil Shamouilian, Jennifer Y. Sun, Ananda H. Kumar