Abstract: A superconducting electromagnet component and an isochronous cyclotron including the same are provided. The superconducting electromagnet component includes a superconducting main coil, a superconducting trim coil group, and a superconducting focusing coil group. The superconducting main coil is disposed around the central axis and includes a median plane. The superconducting trim coil group is disposed in the superconducting main coil around the central axis. The superconducting focusing coil group is disposed on the superconducting trim coil group and includes first focusing coils and second focusing coils. The first focusing coils have a first fan-shaped structure and are disposed side by side around the central axis, and the current directions of two adjacent first focusing coils are opposite. The second focusing coils have a second fan-shaped structure and are correspondingly disposed in the first focusing coils, and the current directions of two adjacent second focusing coils are opposite.

Abstract: An electrocatalyst is provided. The electrocatalyst includes Pd-containing metal nitride, wherein the metal is Co, Fe, Y, Lu, Sc, Ti, V, Cu, Ni, or a combination thereof. The molar ratio between the metal and Pd is greater than 0 and less than or equal to 0.8. A fuel cell utilizing the above electrocatalyst is further provided.

Abstract: An electrocatalyst is provided. The electrocatalyst includes Pd-containing metal nitride, wherein the metal is Co, Fe, Y, Lu, Sc, Ti, V, Cu, Ni, or a combination thereof. The molar ratio between the metal and Pd is greater than 0 and less than or equal to 0.8. A fuel cell utilizing the above electrocatalyst is further provided.

Abstract: A p-type metal oxide semiconductor material is provided, which is composed of AlxGe(1-x)Oy, wherein 0<x?0.6, and 1.0?y?2.0. The p-type metal oxide semiconductor material can be applied in a transistor. The transistor may include a gate electrode, a channel layer separated from the gate electrode by a gate insulation layer, and a source electrode and a drain electrode contacting two sides of the channel layer, wherein the channel layer is the p-type metal oxide semiconductor material.

Abstract: A P-type metal oxide semiconductor material is provided. The P-type metal oxide semiconductor material has a formula of In(1?3)Ga(1?b)Zn(1+a+b)O4, wherein 0?a?0.1, 0?b?0.1, and 0<a+b?0.16. In particular, the P-type metal oxide semiconductor material has a hole carrier concentration of between 1×1011 cm?3 and 5×1018 cm?3.

Abstract: A P-type metal oxide semiconductor material is provided. The P-type metal oxide semiconductor material has a formula of In(1?3)Ga(1?b)Zn(1+a+b)O4, wherein 0?a?0.1, 0?b?0.1, and 0<a+b?0.16. In particular, the P-type metal oxide semiconductor material has a hole carrier concentration of between 1×1011 cm?3 and 5×1018 cm?3.

Abstract: The disclosure provides a p-type metal oxide semiconductor material. The p-type metal oxide semiconductor material has the following formula: In1?xGa1?yMx+yZnO4+m, wherein M is Ca, Mg, or Cu, 0<x+y?0.1, 0?m?3, and 0<x, 0?y, or 0?x, 0<y, and wherein a hole carrier concentration of the p-type metal oxide semiconductor material is in a range of 1×1015˜6×1019 cm?3.

Abstract: The invention provides a thermoelectric material, a method for fabricating the same, and a thermoelectric module employing the same. The thermoelectric material is composed of Zn4Sb(3-x)Rex, wherein 0<x<0.02. Further, the thermoelectric module includes a first electrode, and a thermoelectric element, wherein the thermoelectric element includes the thermoelectric material composed of Zn4Sb(3-x)Rex and contacts to the first electrode; and a second electrode contacting to the thermoelectric element, wherein the first and second electrodes are separated by the thermoelectric element.

Abstract: The disclosure provides a p-type metal oxide semiconductor material. The p-type metal oxide semiconductor material has the following formula: In1?xGa1?yMx+yZnO4+m, wherein M is Ca, Mg, or Cu, 0<x+y?0.1, 0?m?3, and 0<x, 0?y, or 0?x, 0<y, and wherein a hole carrier concentration of the p-type metal oxide semiconductor material is in a range of 1×1015˜6×1019 cm?3.

Abstract: The invention provides a thermoelectric material, a method for fabricating the same, and a thermoelectric module employing the same. The thermoelectric material is composed of Zn4Sb(3-x)Rex, wherein 0<x<0.02. Further, the thermoelectric module includes a first electrode, and a thermoelectric element, wherein the thermoelectric element includes the thermoelectric material composed of Zn4Sb(3-x)Rex and contacts to the first electrode; and a second electrode contacting to the thermoelectric element, wherein the first and second electrodes are separated by the thermoelectric element.

Abstract: A fabrication method for a p-type metal oxide semiconductor material is disclosed, including providing a lithium salt and a zinc salt to be mixed in a solution, wherein to the solution is added a chelating agent to form a metal complex compound comprising lithium and zinc. A heating process for the metal complex compound to form a p-type metal oxide semiconductor material powder is performed, having a formula LixZnx-1 O.

Abstract: A fabrication method for a p-type metal oxide semiconductor material is disclosed, including providing a lithium salt and a zinc salt to be mixed in a solution, wherein the solution is added a chelating agent to form a metal complex compound comprising lithium and zinc. A heating process for the metal complex compound to form a p-type metal oxide semiconductor material powder is performed, having a formula LixZnx-1O.

Abstract: A phase change memory with adjustable resistance ratio is disclosed, which includes a phase change layer and an interfacial layer formed to be in contact with each other, and at least two electrodes in contact with the phase change layer and the interfacial layer respectively. The contact sections between the two electrodes and the phase change layer and the interfacial layer define a contact area respectively, wherein, the area defined by the contact section between the electrode and the phase change layer is larger than the area defined by the contact section between the electrode and the interfacial layer.