Patents by Inventor Shanming Mou

Shanming Mou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • OHMIC CONTACTS FOR SEMICONDUCTOR STRUCTURES
    Publication number: 20210257526
    Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
    Type: Application
    Filed: April 6, 2021
    Publication date: August 19, 2021
    Inventors: Yongjun Jeff Hu, John Mark Meldrim, Shanming Mou, Everett Allen McTeer
  • Ohmic contacts for semiconductor structures
    Patent number: 10998481
    Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
    Type: Grant
    Filed: October 3, 2019
    Date of Patent: May 4, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Yongjun Jeff Hu, John Mark Meldrim, Shanming Mou, Everett Allen McTeer
  • OHMIC CONTACTS FOR SEMICONDUCTOR STRUCTURES
    Publication number: 20200035891
    Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
    Type: Application
    Filed: October 3, 2019
    Publication date: January 30, 2020
    Inventors: Yongjun Jeff Hu, John Mark Meldrim, Shanming Mou, Everett Allen McTeer
  • Ohmic contacts for semiconductor structures
    Patent number: 10446727
    Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
    Type: Grant
    Filed: January 5, 2017
    Date of Patent: October 15, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Yongjun Jeff Hu, John Mark Meldrim, Shanming Mou, Everett Allen McTeer
  • OHMIC CONTACTS FOR SEMICONDUCTOR STRUCTURES
    Publication number: 20170117449
    Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
    Type: Application
    Filed: January 5, 2017
    Publication date: April 27, 2017
    Inventors: Yongjun Jeff Hu, John Mark Meldrim, Shanming Mou, Everett Allen McTeer
  • Ohmic contacts for semiconductor structures
    Patent number: 9608185
    Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
    Type: Grant
    Filed: April 25, 2014
    Date of Patent: March 28, 2017
    Assignee: Micron Technology
    Inventors: Yongjun Jeff Hu, John Mark Meldrim, Shanming Mou, Everett Allen McTeer
  • OHMIC CONTACTS FOR SEMICONDUCTOR STRUCTURES
    Publication number: 20140234996
    Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
    Type: Application
    Filed: April 25, 2014
    Publication date: August 21, 2014
    Applicant: Micron Technology, Inc.
    Inventors: Yongjun Jeff Hu, John Mark Meldrim, Shanming Mou, Everett Allen McTeer
  • OHMIC CONTACTS FOR SEMICONDUCTOR STRUCTURES
    Publication number: 20110291147
    Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
    Type: Application
    Filed: May 25, 2010
    Publication date: December 1, 2011
    Inventors: Yongjun Jeff Hu, John Mark Meldrim, Shanming Mou, Everett Allen McTeer