Abstract: This disclosure relates to video processing that includes iteratively predicting a chroma block in a Chroma from Luma (CfL) prediction mode based on downsampled luma samples downsampled from a plurality of downsampling filters, and selecting a target downsampling filter from the plurality of downsampling filters that corresponds to an error score determined for the iteratively predicting.

Abstract: A server system with inbuilt ability to determine the correctness of connections within the server and prevent operation in the event of a misconnection includes a server motherboard, a connection cable, and a server backplane. The server backplane is electrically connected to the server motherboard through the connection cable. The connection cable comprises a first connector and a second connector, the first connector and the second connector are configured to connect to the server motherboard, the first connector and the second connector carry their own individual binary IDS, and the server motherboard is configured to determine whether the connection cable is correctly connected according to the binary IDs. The present disclosure also provides a method for same.

Abstract: A server system with inbuilt ability to determine the correctness of connections within the server and prevent operation in the event of a misconnection includes a server motherboard, a connection cable, and a server backplane. The server backplane is electrically connected to the server motherboard through the connection cable. The connection cable comprises a first connector and a second connector, the first connector and the second connector are configured to connect to the server motherboard, the first connector and the second connector carry their own individual binary IDS, and the server motherboard is configured to determine whether the connection cable is correctly connected according to the binary IDs. The present disclosure also provides a method for same.

Abstract: A method of forming a high dielectric constant (high-k) dielectric layer by atomic layer deposition includes the following steps. Cycles are performed one after another, and each of the cycles sequentially includes performing a first oxygen precursor pulse to supply an oxygen precursor to a substrate disposed in a reactor; performing a first oxygen precursor purge after the first oxygen precursor pulse; performing a chemical precursor pulse to supply a chemical precursor to the substrate after the first oxygen precursor purge; and performing a chemical precursor purge after the chemical precursor pulse. The first oxygen precursor pulse, the first oxygen precursor purge, the chemical precursor pulse, and the chemical precursor purge are repeated by at least 3 cycles. A second oxygen precursor pulse is performed to supply an oxygen precursor to the substrate after the cycles. A second oxygen precursor purge is performed after the second oxygen precursor pulse.

Abstract: A semiconductor device includes a substrate, an electrode layer disposed on the substrate, and a tri-layered gate-control stack sandwiched between the substrate and the electrode layer. The tri-layered gate-control stack includes a ferroelectric layer disposed on the substrate, a mid-gap metal layer sandwiched between the ferroelectric layer and the substrate, and an anti-ferroelectric layer. The anti-ferroelectric layer is sandwiched between the substrate and the mid-gap metal layer. Alternatively, the ferroelectric layer and the mid-gap metal layer are sandwiched between the anti-ferroelectric layer and the substrate.

Abstract: A semiconductor device includes a substrate, an electrode layer disposed on the substrate, and a tri-layered gate-control stack sandwiched between the substrate and the electrode layer. The tri-layered gate-control stack includes a ferroelectric layer disposed on the substrate, a mid-gap metal layer sandwiched between the ferroelectric layer and the substrate, and an anti-ferroelectric layer. The anti-ferroelectric layer is sandwiched between the substrate and the mid-gap metal layer. Alternatively, the ferroelectric layer and the mid-gap metal layer are sandwiched between the anti-ferroelectric layer and the substrate.

Abstract: A semiconductor device includes a substrate, an electrode layer disposed on the substrate, and a tri-layered gate-control stack sandwiched between the substrate and the electrode layer. The tri-layered gate-control stack includes a ferroelectric layer disposed on the substrate, a mid-gap metal layer sandwiched between the ferroelectric layer and the substrate, and an anti-ferroelectric layer. The anti-ferroelectric layer is sandwiched between the substrate and the mid-gap metal layer. Alternatively, the ferroelectric layer and the mid-gap metal layer are sandwiched between the anti-ferroelectric layer and the substrate.

Abstract: A method for forming a HfOx film based on atomic layer deposition (ALD) process includes: providing a substrate; dividing a plurality of ALD cycles as needed into multiple depositing stages, wherein each of the ALD cycles includes applying HfCl4 pulse and applying H2O pulse over the substrate and a content ratio of HfCl4 to H2O is different and increasing for the depositing stages; and performing the depositing stages to form a HfOx film.

Abstract: A type of invented article, which may refer to apparel or fabric products, can translate languages during a conversation without common language. The invention resolves the most common conversational translation needs and eliminates a burden of bringing a dictionary, or e-dictionary, or hiring an interpreter. The apparel is attached or printed a graphic pattern which includes multiple human language written words or characters that can mutually annotate and interpret each other, a user can finger-point those words in his language to spell the sentences he wish to speak out, similar with the process of typing on computer keyboard to spell a word. In parallel as other conversational partners may watch the neighboring annotation in another language(s) they understand then catch the meaning of sentences.

Abstract: The reactivity of a number of p-methylphenyl thioglycoside (STol) donors which are either fully protected or have one hydroxyl group exposed has been quantitatively determined by HPLC in conjunction with the development of a broadly applicable approach for a facile one-pot synthesis of oligosaccharides. The influence on reactivity of the structural effects of different monosaccharide cores and different protecting groups on each glycoside donor is characterized and quantified. In addition, a correlation between glycosyl donor reactivity and the chemical shift of the anomeric proton by 1 H NMR has been established. A database of thioglycosides as glycosyl donors has been created using this reactivity data. The utility is demonstrated by the easy and rapid one-pot assembly of various linear and branched oligosaccharide structures.

Abstract: A process for synthesizing an oligosaccharide includes (a) activating a protected glycosyl donor with a promoter in the absence of a glycosyl acceptor to produce a reactive intermediate, the glycosyl donor having an activatable aglycon at the anomeric carbon; (b) adding a protected glycosyl donor/acceptor to the reactive intermediate to produce a new glycosyl donor, the glycosyl donor/acceptor having both an activatable aglycon at the anomeric carbon and a free hydroxyl group; (c) repeating steps (a) and (b) to add any additional protected glycosyl donor/acceptors; and (d) adding a protected glycosyl acceptor to produce the oligosaccharide, the glycosyl acceptor having a free hydroxyl group and a non-activatable aglycon at the anomeric carbon.

Abstract: The reactivity of a number of p-methylphenyl thioglycoside (STol) donors which are either fully protected or have one hydroxyl group exposed has been quantitatively determined by HPLC in conjunction with the development of a broadly applicable approach for a facile one-pot synthesis of oligosaccharides. The influence on reactivity of the structural effects of different monosaccharide cores and different protecting groups on each glycoside donor is characterized and quantified. In addition, a correlation between glycosyl donor reactivity and the chemical shift of the anomeric proton by 1 H NMR has been established. A database of thioglycosides as glycosyl donors has been created using this reactivity data. The utility is demonstrated by the easy and rapid one-pot assembly of various linear and branched oligosaccharide structures.

Abstract: The reactivity of a number of p-methylphenyl thioglycoside (STol) donors which are either fully protected or have one hydroxyl group exposed has been quantitatively determined by HPLC in conjunction with the development of a broadly applicable approach for a facile one-pot synthesis of oligosaccharides. The influence on reactivity of the structural effects of different monosaccharide cores and different protecting groups on each glycoside donor is characterized and quantified. In addition, a correlation between glycosyl donor reactivity and the chemical shift of the anomeric proton by 1H NMR has been established. A database of thioglycosides as glycosyl donors has been created using this reactivity data. The utility is demonstrated by the easy and rapid one-pot assembly of various linear and branched oligosaccharide structures.