Abstract: A NAND Flash EEPROM string is formed in a common N-well and includes a plurality of P-channel MOS stacked-gate storage transistors and P-channel MOS string and ground select transistors. In the preferred embodiment, each P-channel storage transistor is programmed via hot electron injection from the depletion region proximate its P+ drain/N-well junction and erased via electron tunneling from its floating gate to its P-type channel as well as to its P+ source and P+ drain regions without requiring high programming and erasing voltages, respectively. Further, high P/N junction biases are not required during programming or erasing operations. This allows the dimensions of the present embodiments to be reduced to a size smaller than that of comparable conventional N-channel NAND Flash EEPROM strings.