Abstract: A novel method for eliminating or reducing the accumulation of electrostatic charges on semiconductor wafers during spin-rinse-drying of the wafers is disclosed. The method includes rinsing a wafer; applying an ionic solution to the wafer; and spin-drying the wafer. During the spin-drying step, the ionic solution neutralizes electrostatic charges on the wafer as the wafer is rotated. This reduces the formation of defects in devices fabricated on the wafer, as well as prevents or reduces electrostatic interference with processing equipment during photolithographic and other fabrication processes.

Abstract: The present invention provides a photosensitive polymer containing the following structure unit of formula (II): Wherein R is hydrogen or C1-C4 alkyl group; R′ is C1-C4 alkyl group; n is an integer of 2, 3, 4, 5 or 6. This photosensitive polymer also relates to chemical amplified photoresist composition. This chemical amplified photoresist composition can be applied to general lithography processes, especially in 193 nm lithography and the patterns formed from the photoresist composition exhibit excellent resolution and photosensitivity.

Abstract: An alicyclic compound of the formula (1) is disclosed: wherein R1 and R2 each independently is a hydroxyl group, a C1-8 hydroxyalkyl group, or a C3-8 hydroxycycloalkyl group; R3, R4 and R5 each independently is a hydrogen, a C1-8 hydroxyalkyl group, a C1-6 carboxylic acid or a C3-8 carboxylic acid ester; k is an integer of 0, 1, 2, 3, 4, 5 or 6. The compound of the formula (1) can be applied to dissolution inhibitors for preparing positive photoresist composition.

Abstract: A chemical amplified photoresist composition comprising a photosensitive polymer containing the following structure unit of formula (II): Wherein R is hydrogen or C1-C4 alkyl group; R′ is C1-C4 alkyl group; n is an integer of 2, 3, 4, 5 or 6. This chemical amplified photoresist composition can be applied to general lithography processes, especially in 193 nm lithography and the patterns formed from the photoresist exhibit excellent resolution and photosensitivity.

Abstract: A positive photoresist composition comprising a polymer, a photoactived agent and an dissolution inhibitor represented by the following formula (1): wherein R1, R2, R3, R4, R5 and k are defined in the specification. The photoresist composition of the present invention is useful as a chemically amplified type resist when exposed to deep UV light from a KrF and ArF excimer laser.

Abstract: This invention provides a compound of the formula (I): wherein R is hydrogen or C1-C4 alkyl group; R′ is C1-C4 alkyl group; n is an integer of 2, 3, 4, 5 or 6. The compound of formula (I) can be polymerized or copolymerized to form a photosensitive polymer or copolymer.

Abstract: A positive photoresist composition comprising a polymer, a photoactived agent and an dissolution inhibitor represented by the following formula (1): wherein R1 and R2 each independently is a hydroxyl group, a C1-8 hydroxyalkyl group, or a C3-8 hydroxycycloalkyl group; R3, R4 and R5 each independently is a hydrogen, a C1-8 hydroxyalkyl group, a C1-6 carboxylic acid or a C3-8 carboxylic acid ester; k is an integer of 0, 1, 2, 3, 4, 5 or 6. The photoresist composition has high transparency to deep UV light and is capable of forming good fine patterns, roughness and high sensitivity, thus being useful as a chemically amplified type resist when exposed to deep UV light from an KrF and ArF excimer laser.