Abstract: A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.

Abstract: A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.

Abstract: A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.

Abstract: A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.

Abstract: In a pattern formation method, a bottom layer is formed over an underlying layer. A middle layer is formed over the bottom layer. A resist pattern is formed over the middle layer. The middle layer is patterned by using the resist pattern as an etching mask. The bottom layer is patterned by using the patterned middle layer. The underlying layer is patterned. The middle layer contains silicon in an amount of 50 wt % or more and an organic material. In one or more of the foregoing and following embodiments, an annealing operation is further performed after the middle layer is formed.

Abstract: In a pattern formation method, a bottom layer is formed over an underlying layer. A middle layer is formed over the bottom layer. A resist pattern is formed over the middle layer. The middle layer is patterned by using the resist pattern as an etching mask. The bottom layer is patterned by using the patterned middle layer. The underlying layer is patterned. The middle layer contains silicon in an amount of 50 wt % or more and an organic material. In one or more of the foregoing and following embodiments, an annealing operation is further performed after the middle layer is formed.

Abstract: Manufacturing semiconductor device includes forming photoresist layer. Photoresist layer is selectively exposed to actinic radiation and developed to form pattern. Photoresist composition includes: iodine-containing sensitizer, photoactive compound, polymer.

Abstract: A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.

Abstract: In a pattern formation method, a bottom layer is formed over an underlying layer. A middle layer is formed over the bottom layer. A resist pattern is formed over the middle layer. The middle layer is patterned by using the resist pattern as an etching mask. The bottom layer is patterned by using the patterned middle layer. The underlying layer is patterned. The middle layer contains silicon in an amount of 50 wt % or more and an organic material. In one or more of the foregoing and following embodiments, an annealing operation is further performed after the middle layer is formed.

Abstract: A baking apparatus for priming a substrate is provided, which includes a chamber, a hot plate and a barrier element. The hot plate is in the chamber and configured to bake the substrate on the hot plate. The barrier element is in contact with a periphery of the substrate and the hot plate to prevent contamination on a lower surface of the substrate. Another baking apparatus for priming a substrate is also provided, which includes a chamber and a hot plate. The hot plate is in the chamber and in full contact with a lower surface of the substrate to prevent contamination thereon.

Abstract: The present disclosure provides an overlay metrology method, an overlay control method and an overlay control system. The overlay metrology method includes capturing a current layer image of a current overlay mark on a current layer with a current focal length and capturing a previous layer image of a previous overlay mark on a previous layer with a previous focal length. Then, the overlay metrology method further includes combining the current layer image with the previous layer image to form an overlay mark image and determining an overlay error between the current overlay mark and the previous overlay mark based on the overlay mark image.

Abstract: A method for etching an ultra thin film is provided which includes providing a substrate having the ultra thin film formed thereon, patterning a photosensitive layer formed over the ultra thin film, etching the ultra thin film using the patterned photosensitive layer, and removing the patterned photosensitive layer. The etching process includes utilizing an etch material with a diffusion resistant carrier such that the etch material is prevented from diffusing to a region underneath the photosensitive layer and removing portions of the ultra thin film underneath the photosensitive layer.

Abstract: The present disclosure provides an overlay metrology method, an overlay control method and an overlay control system. The overlay metrology method includes capturing a current layer image of a current overlay mark on a current layer with a current focal length and capturing a previous layer image of a previous overlay mark on a previous layer with a previous focal length. Then, the overlay metrology method further includes combining the current layer image with the previous layer image to form an overlay mark image and determining an overlay error between the current overlay mark and the previous overlay mark based on the overlay mark image.

Abstract: A baking apparatus for priming a substrate is provided, which includes a chamber, a hot plate and a barrier element. The hot plate is in the chamber and configured to bake the substrate on the hot plate. The barrier element is in contact with a periphery of the substrate and the hot plate to prevent contamination on a lower surface of the substrate. Another baking apparatus for priming a substrate is also provided, which includes a chamber and a hot plate. The hot plate is in the chamber and in full contact with a lower surface of the substrate to prevent contamination thereon.

Abstract: A method for etching an ultra thin film is provided which includes providing a substrate having the ultra thin film formed thereon, patterning a photosensitive layer formed over the ultra thin film, etching the ultra thin film using the patterned photosensitive layer, and removing the patterned photosensitive layer. The etching process includes utilizing an etch material with a diffusion resistant carrier such that the etch material is prevented from diffusing to a region underneath the photosensitive layer and removing portions of the ultra thin film underneath the photosensitive layer.

Abstract: The present invention provides a photosensitive polymer containing the following structure unit of formula (II): Wherein R is hydrogen or C1-C4 alkyl group; R′ is C1-C4 alkyl group; n is an integer of 2, 3, 4, 5 or 6. This photosensitive polymer also relates to chemical amplified photoresist composition. This chemical amplified photoresist composition can be applied to general lithography processes, especially in 193 nm lithography and the patterns formed from the photoresist composition exhibit excellent resolution and photosensitivity.

Abstract: An alicyclic compound of the formula (1) is disclosed: wherein R1 and R2 each independently is a hydroxyl group, a C1-8 hydroxyalkyl group, or a C3-8 hydroxycycloalkyl group; R3, R4 and R5 each independently is a hydrogen, a C1-8 hydroxyalkyl group, a C1-6 carboxylic acid or a C3-8 carboxylic acid ester; k is an integer of 0, 1, 2, 3, 4, 5 or 6. The compound of the formula (1) can be applied to dissolution inhibitors for preparing positive photoresist composition.

Abstract: A chemical amplified photoresist composition comprising a photosensitive polymer containing the following structure unit of formula (II): Wherein R is hydrogen or C1-C4 alkyl group; R′ is C1-C4 alkyl group; n is an integer of 2, 3, 4, 5 or 6. This chemical amplified photoresist composition can be applied to general lithography processes, especially in 193 nm lithography and the patterns formed from the photoresist exhibit excellent resolution and photosensitivity.

Abstract: A positive photoresist composition comprising a polymer, a photoactived agent and an dissolution inhibitor represented by the following formula (1): wherein R1, R2, R3, R4, R5 and k are defined in the specification. The photoresist composition of the present invention is useful as a chemically amplified type resist when exposed to deep UV light from a KrF and ArF excimer laser.

Abstract: This invention provides a compound of the formula (I): wherein R is hydrogen or C1-C4 alkyl group; R′ is C1-C4 alkyl group; n is an integer of 2, 3, 4, 5 or 6. The compound of formula (I) can be polymerized or copolymerized to form a photosensitive polymer or copolymer.