Patents by Inventor Shang-Ying WU
Shang-Ying WU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230389168Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH4 to Sn.Type: ApplicationFiled: August 7, 2023Publication date: November 30, 2023Inventors: Shang-Chieh CHIEN, Po-Chung CHENG, Chia-Chen CHEN, Jen-Yang CHUNG, Li-Jui CHEN, Tzung-Chi FU, Shang-Ying WU
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Patent number: 11829082Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.Type: GrantFiled: March 14, 2022Date of Patent: November 28, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shang-Ying Wu, Shang-Chieh Chien, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
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Patent number: 11832372Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH4 to Sn.Type: GrantFiled: March 7, 2022Date of Patent: November 28, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shang-Chieh Chien, Po-Chung Cheng, Chia-Chen Chen, Jen-Yang Chung, Li-Jui Chen, Tzung-Chi Fu, Shang-Ying Wu
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Publication number: 20220197160Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.Type: ApplicationFiled: March 14, 2022Publication date: June 23, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shang-Ying WU, Shang-Chieh CHIEN, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
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Publication number: 20220191999Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH4 to Sn.Type: ApplicationFiled: March 7, 2022Publication date: June 16, 2022Inventors: Shang-Chieh CHIEN, Po-Chung CHENG, Chia-Chen CHEN, Jen-Yang CHUNG, Li-Jui CHEN, Tzung-Chi FU, Shang-Ying WU
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Patent number: 11275318Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.Type: GrantFiled: February 19, 2021Date of Patent: March 15, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shang-Ying Wu, Shang-Chieh Chien, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
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Patent number: 11272606Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH4 to Sn.Type: GrantFiled: November 1, 2017Date of Patent: March 8, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shang-Chieh Chien, Po-Chung Cheng, Chia-Chen Chen, Jen-Yang Chung, Li-Jui Chen, Tzung-Chi Fu, Shang-Ying Wu
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Patent number: 11092555Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.Type: GrantFiled: July 20, 2020Date of Patent: August 17, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Lin Louis Chang, Shang-Chieh Chien, Shang-Ying Wu, Li-Kai Cheng, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng, Anthony Yen, Chia-Chen Chen
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Publication number: 20210173316Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.Type: ApplicationFiled: February 19, 2021Publication date: June 10, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shang-Ying WU, Shang-Chieh CHIEN, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
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Patent number: 10928741Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.Type: GrantFiled: May 18, 2020Date of Patent: February 23, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shang-Ying Wu, Shang-Chieh Chien, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
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Patent number: 10875060Abstract: Debris is removed from a collector of an extreme ultraviolet light source vessel by applying a suction force through a vacuum opening of a cable. The method for removing debris also includes weakening debris attachment by using a sticky surface or by spreading a solution through a nozzle, wherein the sticky surface and the nozzle are arranged on the cable proximal to the vacuum opening. A borescope system and interchangeable rigid portions of the cable assists in targeting a target area of the collector where the debris is.Type: GrantFiled: April 18, 2019Date of Patent: December 29, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shang-Ying Wu, Ming-Hsun Tsai, Sheng-Kang Yu, Yung-Teng Yu, Chi Yang, Shang-Chieh Chien, Chia-Chen Chen, Li-Jui Chen, Po-Chung Cheng
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Publication number: 20200348241Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.Type: ApplicationFiled: July 20, 2020Publication date: November 5, 2020Inventors: Chun-Lin Louis CHANG, Shang-Chieh CHIEN, Shang-Ying WU, Li-Kai CHENG, Tzung-Chi FU, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG, Anthony YEN, Chia-Chen CHEN
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Publication number: 20200331038Abstract: Debris is removed from a collector of an extreme ultraviolet light source vessel by applying a suction force through a vacuum opening of a cable. The method for removing debris also includes weakening debris attachment by using a sticky surface or by spreading a solution through a nozzle, wherein the sticky surface and the nozzle are arranged on the cable proximal to the vacuum opening. A borescope system and interchangeable rigid portions of the cable assists in targeting a target area of the collector where the debris is.Type: ApplicationFiled: April 18, 2019Publication date: October 22, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shang-Ying WU, Ming-Hsun TSAI, Sheng-Kang YU, Yung-Teng YU, Chi YANG, Shang-Chieh CHIEN, Chia-Chen CHEN, Li-Jui CHEN, Po-Chung CHENG
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Publication number: 20200278617Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.Type: ApplicationFiled: May 18, 2020Publication date: September 3, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shang-Ying WU, Shang-Chieh CHIEN, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
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Patent number: 10718718Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.Type: GrantFiled: September 29, 2019Date of Patent: July 21, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Lin Louis Chang, Shang-Chieh Chien, Shang-Ying Wu, Li-Kai Cheng, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng, Anthony Yen, Chia-Chen Chen
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Patent number: 10656539Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.Type: GrantFiled: August 30, 2018Date of Patent: May 19, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shang-Ying Wu, Shang-Chieh Chien, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
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Publication number: 20200025688Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.Type: ApplicationFiled: September 29, 2019Publication date: January 23, 2020Inventors: Chun-Lin Louis CHANG, Shang-Chieh CHIEN, Shang-Ying WU, Li-Kai CHENG, Tzung-Chi FU, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG, Anthony YEN, Chia-Chen CHEN
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Patent number: 10429314Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.Type: GrantFiled: January 30, 2018Date of Patent: October 1, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Lin Louis Chang, Shang-Chieh Chien, Shang-Ying Wu, Li-Kai Cheng, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng, Anthony Yen, Chia-Chen Chen
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Publication number: 20190155179Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.Type: ApplicationFiled: August 30, 2018Publication date: May 23, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shang-Ying WU, Shang-Chieh CHIEN, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
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Publication number: 20190033225Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.Type: ApplicationFiled: January 30, 2018Publication date: January 31, 2019Inventors: Chun-Lin Louis CHANG, Shang-Chieh CHIEN, Shang-Ying WU, Li-Kai CHENG, Tzung-Chi FU, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG, Anthony YEN, Chia-Chen CHEN