Patents by Inventor Shankar N. Chandran

Shankar N. Chandran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Accelerated plasma clean
    Patent number: 7506654
    Abstract: A method and apparatus that reduces the time required to clean a processing chamber employing a reactive plasma cleaning process. A plasma is formed in an Astron fluorine source generator from a flow of substantially pure inert-source gas. After formation of the plasma, a flow of a fluorine source gas is introduced therein such that the fluorine source flow accelerates at a rate no greater than 1.67 standard cubic centimeters per second2 (scc/s2). In this fashion, the plasma contains a plurality of radicals and dissociated inert-source gas atoms, defining a cleaning mixture. The ratio of inert-source gas to fluorine source is greater than 1:1.
    Type: Grant
    Filed: October 18, 2004
    Date of Patent: March 24, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Shankar N. Chandran, Scott Hendrickson, Gwendolyn D. Jones, Shankar Venkataraman, Ellie Yieh
  • Accelerated plasma clean
    Publication number: 20020104467
    Abstract: A method and apparatus that reduces the time required to clean a processing chamber employing a reactive plasma cleaning process. A plasma is formed in an Astron fluorine source generator from a flow of substantially pure inert-source gas. After formation of the plasma, a flow of a fluorine source gas is introduced therein such that the fluorine source flow accelerates at a rate no greater than 1.67 standard cubic centimeters per second2 (scc/s2). In this fashion, the plasma contains a plurality of radicals and dissociated inert-source gas atoms, defining a cleaning mixture. The ratio of inert-source gas to fluorine source is greater than 1:1.
    Type: Application
    Filed: April 3, 2002
    Publication date: August 8, 2002
    Applicant: Applied Materials, Inc.
    Inventors: Shankar N. Chandran, Scott Hendrickson, Gwendolyn D. Jones, Shankar Venkataraman, Ellie Yieh
  • Accelerated plasma clean
    Patent number: 6374831
    Abstract: A method and apparatus that reduces the time required to clean a processing chamber employing a reactive plasma cleaning process. A plasma is formed in an Astron fluorine source generator from a flow of substantially pure inert-source gas. After formation of the plasma, a flow of a fluorine source gas is introduced therein such that the fluorine source flow accelerates at a rate no greater than 1.67 standard cubic centimeters per second2 (scc/s2). In this fashion, the plasma contains a plurality of radicals and dissociated inert-source gas atoms, defining a cleaning mixture. The ratio of inert-source gas to fluorine source is greater than 1:1.
    Type: Grant
    Filed: February 4, 1999
    Date of Patent: April 23, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Shankar N. Chandran, Scott Hendrickson, Gwendolyn D. Jones, Shankar Venkataraman, Ellie Yieh