Patents by Inventor Shannon B. Hill

Shannon B. Hill has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Boron-based capping layers for EUV optics
    Patent number: 11268911
    Abstract: Disclosed herein are optical elements and methods for making the same. Such optical elements may comprise a first layer disposed on a substrate, a second layer disposed on the first layer, a terminal layer disposed on the second layer, and a cap layer disposed on the terminal layer. The cap layer may comprise boron, boron nitride, or boron carbide. Such optical elements may be made using a method comprising depositing a first layer using vapor deposition such that the first layer is disposed on a substrate, depositing a second layer using vapor deposition such that the second layer is disposed on the first layer, depositing a terminal layer using vapor deposition such that the terminal layer is disposed on the second layer, and depositing a cap layer comprising boron, boron nitride, or boron carbide using vapor deposition such that the cap layer is disposed on the terminal layer.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: March 8, 2022
    Assignee: KLA-TENCOR CORPORATION
    Inventors: Gildardo R Delgado, Shannon B Hill, Zefram Marks
  • Boron-Based Capping Layers for EUV Optics
    Publication number: 20200217804
    Abstract: Disclosed herein are optical elements and methods for making the same. Such optical elements may comprise a first layer disposed on a substrate, a second layer disposed on the first layer, a terminal layer disposed on the second layer, and a cap layer disposed on the terminal layer. The cap layer may comprise boron, boron nitride, or boron carbide. Such optical elements may be made using a method comprising depositing a first layer using vapor deposition such that the first layer is disposed on a substrate, depositing a second layer using vapor deposition such that the second layer is disposed on the first layer, depositing a terminal layer using vapor deposition such that the terminal layer is disposed on the second layer, and depositing a cap layer comprising boron, boron nitride, or boron carbide using vapor deposition such that the cap layer is disposed on the terminal layer.
    Type: Application
    Filed: May 16, 2019
    Publication date: July 9, 2020
    Inventors: Gildardo R. Delgado, Shannon B. Hill, Zefram Marks
  • Magneto-optical trap ion source
    Patent number: 7709807
    Abstract: A system and method are disclosed for producing a source of ions, and particularly, a focused ion beam. The system and method use a magneto-optical trap (MOT) to produce a population of neutral atoms. A laser is then utilized to ionize atoms and produce a population of ions. An extraction element is then used to transfer the ions so that they can be used in a wide array of applications.
    Type: Grant
    Filed: May 7, 2008
    Date of Patent: May 4, 2010
    Assignee: United States of America as represented by the Secretary of Commerce, The National Institute of Standards and Technology
    Inventors: Jabez J. McClelland, James L. Hanssen, Marcus Jacka, Shannon B. Hill
  • MAGNETO-OPTICAL TRAP ION SOURCE
    Publication number: 20080296483
    Abstract: A system and method are disclosed for producing a source of ions, and particularly, a focused ion beam. The system and method use a magneto-optical trap (MOT) to produce a population of neutral atoms. A laser is then utilized to ionize atoms and produce a population of ions. An extraction element is then used to transfer the ions so that they can be used in a wide array of applications.
    Type: Application
    Filed: May 7, 2008
    Publication date: December 4, 2008
    Applicant: NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
    Inventors: Jabez J. McClelland, James L. Hanssen, Marcus Jacka, Shannon B. Hill