Patents by Inventor Shantia Riahi

Shantia Riahi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Deposition of titanium amides
    Patent number: 6946158
    Abstract: The present invention is a process for enhancing the chemical vapor deposition of titanium nitride from a titanium containing precursor selected from the group consisting of tetrakis(dimethylamino)titanium, tetrakis(diethylamino)titanium and mixtures thereof, reacted with ammonia to produce the titanium nitride on a semiconductor substrate by the addition of organic amines, such as dipropylamine, in a range of approximately 10 parts per million by weight to 10% by weight, preferably 50 parts per million by weight to 1.0 percent by weight, most preferably 100 parts per million by weight to 5000 parts per million by weight to the titanium containing precursor wherein prior to the reaction, said titanium containing precursor is subjected to a purification process to remove hydrocarbon impurities from the titanium containing precursor.
    Type: Grant
    Filed: June 10, 2002
    Date of Patent: September 20, 2005
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Matthias J. Jahl, Douglas W. Carson, Shantia Riahi, Raymond Nicholas Vrtis
  • Deposition of titanium amides
    Patent number: 6602783
    Abstract: The present invention is a process for enhancing the chemical vapor deposition of titanium nitride from a titanium containing precursor selected from the group consisting of tetrakis(dimethylamino)titanium, tetrakis(diethylamino)titanium and mixtures thereof, reacted with ammonia to produce the titanium nitride on a semiconductor substrate by the addition of organic amines, such as dipropylamine, in a range of approximately 10 parts per million by weight to 10% by weight, preferably 50 parts per million by weight to 1.0 percent by weight, most preferably 100 parts per million by weight to 5000 parts per million by weight to the titanium containing precursor wherein prior to the reaction, said titanium containing precursor is subjected to a purification process to remove hydrocarbon impurities from the titanium containing precursor.
    Type: Grant
    Filed: September 29, 2000
    Date of Patent: August 5, 2003
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Matthias J. Jahl, Douglas W. Carson, Shantia Riahi, Raymond Nicholas Vrtis
  • Deposition of titanium amides
    Publication number: 20030072883
    Abstract: The present invention is a process for enhancing the chemical vapor deposition of titanium nitride from a titanium containing precursor selected from the group consisting of tetrakis(dimethylamino)titanium, tetrakis(diethylamino)titanium and mixtures thereof, reacted with ammonia to produce the titanium nitride on a semiconductor substrate by the addition of organic amines, such as dipropylamine, in a range of approximately 10 parts per million by weight to 10% by weight, preferably 50 parts per million by weight to 1.0 percent by weight, most preferably 100 parts per million by weight to 5000 parts per million by weight to the titanium containing precursor wherein prior to the reaction, said titanium containing precursor is subjected to a purification process to remove hydrocarbon impurities from the titanium containing precursor.
    Type: Application
    Filed: June 10, 2002
    Publication date: April 17, 2003
    Inventors: Matthias J. Jahl, Douglas W. Carson, Shantia Riahi, Raymond Nicholas Vrtis
  • Ion beam implant system
    Patent number: 4855604
    Abstract: A charge forming system and apparatus for introducing ion source materials into the ion source vaporizer of an ion implant instrument is disclosed.
    Type: Grant
    Filed: March 17, 1987
    Date of Patent: August 8, 1989
    Assignee: Air Products and Chemicals, Inc.
    Inventor: Shantia Riahi
  • Ion implant using tetrafluoroborate
    Patent number: 4851255
    Abstract: Metal tetrafluoroborates, alkali and alkaline earth tetrafluoroborates in particular, and preferably lithium tetrafluoroborate are used as ion source materials in ion implantation of semiconductor materials with boron.
    Type: Grant
    Filed: May 6, 1988
    Date of Patent: July 25, 1989
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Andre Lagendijk, Shantia Riahi
  • Ion implant using tetrafluoroborate
    Patent number: 4760263
    Abstract: Metal tetrafluoroborates, alkali and alkaline earth tetrafluoroborates in particular, and preferably lithium tetrafluoroborate are used as ion source materials in ion implantation of semiconductor materials with boron.
    Type: Grant
    Filed: December 29, 1986
    Date of Patent: July 26, 1988
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Andre Lagendijk, Shantia Riahi