Abstract: Disclosed is a diamine compound represented by Formula (1), in which R1, R2, R3, R4, R5, X1, X2, X3, X4, m, n, a, b, c, and d are as defined herein. Also disclosed are a method for manufacturing the diamine compound, a composition including the diamine compound having a (chain alkoxy-methylene) phenyl group or a (hydroxyl-methylene) phenyl group, and a polymer including the (chain alkoxy-methylene) phenyl group or the (hydroxyl-methylene) phenyl group.

Abstract: In a method of cleaning a lithography system, during idle mode, a stream of air is directed, through a first opening, into a chamber of a wafer table of an EUV lithography system. One or more particles is extracted by the directed stream of air from surfaces of one or more wafer chucks in the chamber of the wafer table. The stream of air and the extracted one or more particle are drawn, through a second opening, out of the chamber of the wafer table.

Abstract: A trajectory predicting method and a computing system for trajectory prediction are provided. In the method, feature extraction is respectively performed on past trajectories of multiple target objects through an encoder to generate first trajectory information of the target objects. A pooling process is performed on the first trajectory information of the target objects to generate second trajectory information of the target objects. The second trajectory information of each target object includes location relationships relative to other target objects. Third trajectory information is obtained from the past trajectories of the target objects. The third trajectory information includes a moving direction, scene information, and/or a moving mode. The predicted trajectories of the target objects are generated according to the second trajectory information and the third trajectory information through a decoder. Accordingly, the accuracy of prediction can be improved.

Abstract: Methods, systems and apparatus for memory devices with discharging circuits are provided. In one aspect, a semiconductor device includes a semiconductor substrate, one or more discharging circuits arranged on the semiconductor substrate, one or more common source line (CSL) layers conductively coupled to the one or more discharging circuits, and a memory array having a three-dimensional (3D) array of memory cells arranged in a plurality of vertical channels on the one or more CSL layers. Each of the plurality of vertical channels includes a respective string of memory cells, and each of the one or more CSL layers is conductively coupled to corresponding strings of memory cells. Each of the one or more discharging circuits includes one or more transistors that are disabled by one or more corresponding conductive lines through the memory array.

Abstract: Methods, systems and apparatus for memory devices with discharging circuits are provided. In one aspect, a semiconductor device includes a semiconductor substrate, one or more discharging circuits arranged on the semiconductor substrate, one or more common source line (CSL) layers conductively coupled to the one or more discharging circuits, and a memory array having a three-dimensional (3D) array of memory cells arranged in a plurality of vertical channels on the one or more CSL layers. Each of the plurality of vertical channels includes a respective string of memory cells, and each of the one or more CSL layers is conductively coupled to corresponding strings of memory cells. Each of the one or more discharging circuits includes one or more transistors that are disabled by one or more corresponding conductive lines through the memory array.

Abstract: Gamma voltage conversion device includes a gamma voltage conversion circuit, an amplifier, and a gamma voltage adjusting circuit. The gamma voltage conversion circuit generates a first gamma voltage conformed to a first gamma curve according to a grey level. The amplifier includes a first input end receiving the first gamma voltage, a second end, and an output end. The amplifier outputs the first or a second gamma voltage conformed to a second gamma curve according to the grey level according to the first and the second ends of the amplifier. The gamma voltage adjusting circuit coupled between the second input end and the output end of the amplifier controls the amplifier to output the first or the second gamma voltage as the gamma driving voltage according to the grey level and a gamma curve selection signal.

Abstract: Gamma voltage conversion device includes a gamma voltage conversion circuit, an amplifier, and a gamma voltage adjusting circuit. The gamma voltage conversion circuit generates a first gamma voltage conformed to a first gamma curve according to a grey level. The amplifier includes a first input end receiving the first gamma voltage, a second end, and an output end. The amplifier outputs the first or a second gamma voltage conformed to a second gamma curve according to the grey level according to the first and the second ends of the amplifier. The gamma voltage adjusting circuit coupled between the second input end and the output end of the amplifier controls the amplifier to output the first or the second gamma voltage as the gamma driving voltage according to the grey level and a gamma curve selection signal.