Abstract: Compounds of Formula (IA) (Targeting Moiety)-(Linker)-(Protease Ligand)??(IA), where the targeting moiety is an oligonucleotide capable of binding a target protein and the protease ligand is a ligand capable of binding a protease, and methods for the use thereof are provided. Also provided are compounds of Formula (IB) (Targeting Moiety)-(Linker)-(Protease Ligand or E3 Ligase Ligand)??(IB), where the targeting moiety is an oligonucleotide capable of binding a target protein, the protease ligand is a ligand capable of binding a protease, and the E3 ligase ligand is a ligand capable of binding an E3 ligase, and methods for the use thereof are provided.

Abstract: The present disclosure provide latch performance detecting method and a device. The method includes: extracting circuit structure information of a latch, having a transmission gate and a latch unit, an output terminal of the transmission gate is coupled to the input terminal of the latch unit, and the input terminal is coupled to the output terminal of the drive unit corresponding to the latch; the resistance value of the equivalent resistor of the latch is determined based on the circuit structure information, The first terminal of the equivalent resistor is the output terminal of the driving unit, and the second terminal is the input terminal of the latching unit; based on the resistance value of the equivalent resistor, the latching performance is determined. The embodiments of the present disclosure can accurately detect whether the latch is in a metastable state, which helps to improve the performance of the circuit.

Abstract: Disclosed is a diamine compound represented by Formula (1), in which R1, R2, R3, R4, R5, X1, X2, X3, X4, m, n, a, b, c, and d are as defined herein. Also disclosed are a method for manufacturing the diamine compound, a composition including the diamine compound having a (chain alkoxy-methylene) phenyl group or a (hydroxyl-methylene) phenyl group, and a polymer including the (chain alkoxy-methylene) phenyl group or the (hydroxyl-methylene) phenyl group.

Abstract: Innovations in adaptive encoding of screen content based on motion type are described. For example, a video encoder system receives a current picture of a video sequence. The video encoder system determines a current motion type for the video sequence and, based at least in part on the current motion type, sets one or more encoding parameters. Then, the video encoder system encodes the current picture according to the encoding parameter(s). The innovations can be used in real-time encoding scenarios when encoding screen content for a screen sharing application, desktop conferencing application, or other application. In some cases, the innovations allow a video encoder system to adapt compression to different characteristics of screen content at different times within the same video sequence.

Abstract: A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer. The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.

Abstract: A device includes a first channel layer, a second channel layer, a gate structure, a source/drain epitaxial structure, and a source/drain contact. The first channel layer and the second channel layer are arranged above the first channel layer in a spaced apart manner over a substrate. The gate structure surrounds the first and second channel layers. The source/drain epitaxial structure is connected to the first and second channel layers. The source/drain contact is connected to the source/drain epitaxial structure. The second channel layer is closer to the source/drain contact than the first channel layer is to the source/drain contact, and the first channel layer is thicker than the second channel layer.

Abstract: Various embodiments are disclosed for providing machine learning routines with peripheral device data to infer driver activity and location. Peripheral device data may be collected on a peripheral device having a machine learning routine executing thereon to infer driver activity and perform improved estimation of driver location. Using driver activity and location estimation, contextually relevant delivery workflow assistance may be automatically provided to a delivery driver or other individual without requiring manual input, thereby improving driver safety and operational efficiency.

Abstract: A magnetic member includes a bobbin, a coil and a magnetic core. The bobbin includes a first portion and a second portion. The second portion is connected to the first portion and includes a thermoplastic material. The first portion includes an insulating material that is different from the thermoplastic material. The coil is wound on the first portion of the bobbin and includes a terminal end fixed at the second portion of the bobbin. The magnetic core is disposed on the bobbin and extends through the bobbin.

Abstract: A display panel and a display apparatus. The display panel includes: a light-emitting device layer including a base plate and a light-emitting layer arranged in stack; a touch control layer including touch control electrodes and a planarization layer covering the touch control electrodes; a buffer layer arranged at a side of the planarization layer away from the light-emitting device layer; an optical film layer arranged at a side of the buffer layer away from the touch control layer and including a plurality of black matrices and a plurality of light filtering units arranged in the same layer as the black matrices; a material of the buffer layer and a material of the planarization layer are immiscible, and an orthographic projection of the buffer layer on the base plate covers an orthographic projection of the light filtering units on the base plate.

Abstract: A device includes a first channel layer, a second channel layer, a gate structure, a source/drain epitaxial structure, and a source/drain contact. The first channel layer and the second channel layer are arranged above the first channel layer in a spaced apart manner over a substrate. The gate structure surrounds the first and second channel layers. The source/drain epitaxial structure is connected to the first and second channel layers. The source/drain contact is connected to the source/drain epitaxial structure. The second channel layer is closer to the source/drain contact than the first channel layer is to the source/drain contact, and the first channel layer is thicker than the second channel layer.

Abstract: A resin composition and a cured film are provided. The resin composition includes a resin (A), a crosslinking agent (B), a surfactant (C), an additive (D) and a solvent (E). The resin (A) includes at least one of a phenol-based resin (A-1) and a polystyrene resin including a hydroxyl group (A-2). The additive (D) includes a fluoro-based phenol (D-1), a polyhydroxyphenol resin (D-2), a compound including an epoxy group (D-3), a polyether resin (D-4), a thermal acid generator including a sulfonate ion (D-5), or a combination thereof.

Abstract: A device includes a semiconductor nanostructure, and an oxide layer, which includes horizontal portions on a top surface and a bottom surface of the semiconductor nanostructure, vertical portions on sidewalls of the semiconductor nanostructure, and corner portions on corners of the semiconductor nanostructure. The horizontal portions have a first thickness. The vertical portions have a second thickness. The corner portions have a third thickness. Both of the second thickness and the third thickness are greater than the first thickness. A high-k dielectric layer surrounds the oxide layer. A gate electrode surrounds the high-k dielectric layer.

Abstract: A device includes a semiconductor nanostructure, and an oxide layer, which includes horizontal portions on a top surface and a bottom surface of the semiconductor nanostructure, vertical portions on sidewalls of the semiconductor nanostructure, and corner portions on corners of the semiconductor nanostructure. The horizontal portions have a first thickness. The vertical portions have a second thickness. The corner portions have a third thickness. Both of the second thickness and the third thickness are greater than the first thickness. A high-k dielectric layer surrounds the oxide layer. A gate electrode surrounds the high-k dielectric layer.

Abstract: A resin composition, an anti-etching layer and an etching method are provided. The resin composition includes a resin (A), a crosslinking agent (B), a surfactant (C), and a solvent (D). The resin (A) includes a hydroxyl type polystyrene resin (A-1), a hydroxyl type phenolic resin (A-2), a polyhydroxy phenol resin (A-3), or a combination thereof. The crosslinking agent (B) includes a structure of novolac epoxy resin type (B-1), polymethyl methacrylate type (B-2), maleimide type (B-3) or hyperbranched oligomer (B-4).

Abstract: A method of forming a nanostructure field-effect transistor (nano-FET) device includes: forming a fin structure that includes a fin and alternating layers of a first semiconductor material and a second semiconductor material overlying the fin; forming a dummy gate structure over the fin structure; forming source/drain regions over the fin structure on opposing sides of the dummy gate structure; removing the dummy gate structure to expose the first and second semiconductor materials under the dummy gate structure; selectively removing the exposed first semiconductor material, where after the selectively removing, the exposed second semiconductor material remains to form nanostructures, where different surfaces of the nanostructures have different atomic densities of the second semiconductor material; forming a gate dielectric layer around the nanostructures, thicknesses of the gate dielectric layer on the different surfaces of the nanostructures being formed substantially the same; and forming a gate electrode

Abstract: A device includes a first channel layer, a second channel layer, a gate structure, a source/drain epitaxial structure, and a source/drain contact. The first channel layer and the second channel layer are arranged above the first channel layer in a spaced apart manner over a substrate. The gate structure surrounds the first and second channel layers. The source/drain epitaxial structure is connected to the first and second channel layers. The source/drain contact is connected to the source/drain epitaxial structure. The second channel layer is closer to the source/drain contact than the first channel layer is to the source/drain contact, and the first channel layer is thicker than the second channel layer.

Abstract: A cabinet with filter life prediction function and a method of predicting filter life are provided. The cabinet has an airflow module generating airflow flowing through a filter module. An air quality sensor continuously monitors the air quality sensing value of the airflow and records the sensed value in association with the sensing time. A regression analysis is performed based on the record data to obtain a regression model when a modeling condition is met. When a prediction condition is met, a time period for the currently sensed value to decrease to a threshold is calculated to be a predicted remaining life of the filter module. A notification is generated when the predicted remaining life of the filter module is less than a life threshold.

Abstract: A device includes a semiconductor nanostructure, and an oxide layer, which includes horizontal portions on a top surface and a bottom surface of the semiconductor nanostructure, vertical portions on sidewalls of the semiconductor nanostructure, and corner portions on corners of the semiconductor nanostructure. The horizontal portions have a first thickness. The vertical portions have a second thickness. The corner portions have a third thickness. Both of the second thickness and the third thickness are greater than the first thickness. A high-k dielectric layer surrounds the oxide layer. A gate electrode surrounds the high-k dielectric layer.

Abstract: The present invention provides a use of a substance in the preparation of a product for treating chronic atrophic gastritis, protecting gastric mucosa, treating gastric precancerous lesions, blocking transformation of gastritis into cancer, and preventing occurrence of gastric cancer, the product being one selected from a medicament, a healthcare product and a foodstuff, and the substance being selected from the group consisting of: nuciferin, a nuciferin derivative, a lotus leaf extract, and a mixture of at least two selected from the above substances. The use includes at least one of treating chronic atrophic gastritis, protecting gastric mucosa, blocking transformation of gastritis into cancer, treating gastric precancerous lesions, and preventing occurrence of gastric cancer. In vitro experiments showed that nuciferin can block transformation of gastritis into cancer and cell proliferation.

Abstract: A scorpion venom heat-resistant synthetic peptide (SVHRSP) contains an amino acid sequence of SEQ ID NO 1. One or more amino acids the amino acid sequence can be substituted or deleted. A pharmaceutical composition that contains the SVHRSP has numerous applications. The pharmaceutical composition can be used to protect neuronal cell against amyloid beta-induced toxic effects, or to inhibit the sodium channel current of a hippocampal neuronal cell, or to protect a neuronal cell against NMDA-induced injury. It may also promote the formation of a pluripotent neural stem cell from a type II astrocyte, or treats a subject, such as a human, having epilepsy, Alzheimer's disease, or Parkinson's disease.