Patents by Inventor Shao-Ying Ting
Shao-Ying Ting has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10573779Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.Type: GrantFiled: December 24, 2018Date of Patent: February 25, 2020Assignee: Genesis Photonics Inc.Inventors: Shao-Ying Ting, Kuan-Chieh Huang, Jing-En Huang, Yi-Ru Huang, Sie-Jhan Wu, Long-Lin Ke
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Publication number: 20200052159Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.Type: ApplicationFiled: October 21, 2019Publication date: February 13, 2020Applicant: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Tung-Lin Chuang, Yan-Ting Lan, Sheng-Tsung Hsu, Chih-Ming Shen, Jing-En Huang, Teng-Hsien Lai, Hung-Chuan Mai, Kuan-Chieh Huang, Shao-Ying Ting, Cheng-Pin Chen, Wei-Chen Chien, Chih-Chin Cheng, Chih-Hung Tseng
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Publication number: 20200006419Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.Type: ApplicationFiled: September 9, 2019Publication date: January 2, 2020Inventors: Tsung-Syun Huang, Chih-Chung Kuo, Jing-En Huang, Shao-Ying Ting
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Patent number: 10453999Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.Type: GrantFiled: May 16, 2018Date of Patent: October 22, 2019Assignee: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Tung-Lin Chuang, Yan-Ting Lan, Sheng-Tsung Hsu, Chih-Ming Shen, Jing-En Huang, Teng-Hsien Lai, Hung-Chuan Mai, Kuan-Chieh Huang, Shao-Ying Ting, Cheng-Pin Chen, Wei-Chen Chien, Chih-Chin Cheng, Chih-Hung Tseng
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Patent number: 10411065Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.Type: GrantFiled: August 13, 2018Date of Patent: September 10, 2019Assignee: GENESIS PHOTONICS INC.Inventors: Tsung-Syun Huang, Chih-Chung Kuo, Jing-En Huang, Shao-Ying Ting
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Patent number: 10396255Abstract: A light emitting component includes a light emitting unit, a molding compound and a wavelength converting layer. The light emitting unit has a forward light emitting surface. The molding compound covers the light emitting unit. The wavelength converting layer is disposed above the molding compound. The wavelength converting layer has a first surface and a second surface opposite to the first surface, wherein the first surface is located between the forward light emitting surface and the second surface, and at least one of the first and second surfaces is non-planar.Type: GrantFiled: November 27, 2017Date of Patent: August 27, 2019Assignee: Genesis Photonics Inc.Inventors: Kuan-Chieh Huang, Shao-Ying Ting, Jing-En Huang, Yi-Ru Huang
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Publication number: 20190237627Abstract: A light emitting diode structure including a substrate, a semiconductor epitaxial structure, a first insulating layer, a first reflective layer, a second reflective layer, a second insulating layer and at least one electrode. The substrate has a tilt surface. The semiconductor epitaxial structure at least exposes the tilt surface. The first insulating layer exposes a portion of the semiconductor epitaxial structure. The first reflective layer is at least partially disposed on the portion of the semiconductor epitaxial structure and electrically connected to the semiconductor epitaxial structure. The second reflective layer is disposed on the first reflective layer and the first insulating layer, and covers at least the portion of the tilt surface. The second insulating layer is disposed on the second reflective layer. The electrode is disposed on the second reflective layer and electrically connected to the first reflective layer and the semiconductor epitaxial structure.Type: ApplicationFiled: April 15, 2019Publication date: August 1, 2019Applicant: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Yu-Yun Lo, Chih-Ling Wu, Jing-En Huang, Shao-Ying Ting
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Publication number: 20190139932Abstract: A method of mass transferring electronic devices includes following steps. A wafer is provided. The wafer includes a substrate and a plurality of electronic devices. The electronic devices are arranged in a matrix on a surface of the substrate. The wafer is attached to a temporary fixing film. The wafer is cut so that the wafer is divided into a plurality of blocks. Each of the blocks includes at least a part of the electronic devices and a sub-substrate. The temporary fixing film is stretched so that the blocks on the temporary fixing film are separated from each other as the temporary fixing film is stretched. At least a part of the blocks is selected as a predetermined bonding portion, and each of the blocks in the predetermined bonding portion is transferred to a carrying substrate in sequence, so that the electronic devices in the predetermined bonding portion are bonded to the carrying substrate. The sub-substrates of the blocks are removed.Type: ApplicationFiled: January 7, 2019Publication date: May 9, 2019Applicant: Genesis Photonics Inc.Inventors: Shao-Ying Ting, Yan-Ting Lan, Jing-En Huang, Yi-Ru Huang
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Publication number: 20190131490Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.Type: ApplicationFiled: December 24, 2018Publication date: May 2, 2019Applicant: Genesis Photonics Inc.Inventors: Shao-Ying Ting, Kuan-Chieh Huang, Jing-En Huang, Yi-Ru Huang, Sie-Jhan Wu, Long-Lin Ke
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Patent number: 10263156Abstract: A light emitting diode structure including a substrate, a semiconductor epitaxial structure, a first insulating layer, a first reflective layer, a second reflective layer, a second insulating layer and at least one electrode. The substrate has a tilt surface. The semiconductor epitaxial structure at least exposes the tilt surface. The first insulating layer exposes a portion of the semiconductor epitaxial structure. The first reflective layer is at least partially disposed on the portion of the semiconductor epitaxial structure and electrically connected to the semiconductor epitaxial structure. The second reflective layer is disposed on the first reflective layer and the first insulating layer, and covers at least the portion of the tilt surface. The second insulating layer is disposed on the second reflective layer. The electrode is disposed on the second reflective layer and electrically connected to the first reflective layer and the semiconductor epitaxial structure.Type: GrantFiled: January 15, 2018Date of Patent: April 16, 2019Assignee: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Yu-Yun Lo, Chih-Ling Wu, Jing-En Huang, Shao-Ying Ting
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Publication number: 20190088819Abstract: A ?LED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the ?LED is also provided.Type: ApplicationFiled: November 19, 2018Publication date: March 21, 2019Applicant: Genesis Photonics Inc.Inventors: Shao-Ying Ting, Yan-Ting Lan, Jing-En Huang, Yi-Ru Huang
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Patent number: 10177113Abstract: A method of mass transferring electronic devices includes following steps. A wafer is provided. The wafer includes a substrate and a plurality of electronic devices. The electronic devices are arranged in a matrix on a surface of the substrate. The wafer is attached to a temporary fixing film. The wafer is cut so that the wafer is divided into a plurality of blocks. Each of the blocks includes at least a part of the electronic devices and a sub-substrate. The temporary fixing film is stretched so that the blocks on the temporary fixing film are separated from each other as the temporary fixing film is stretched. At least a part of the blocks is selected as a predetermined bonding portion, and each of the blocks in the predetermined bonding portion is transferred to a carrying substrate in sequence, so that the electronic devices in the predetermined bonding portion arc bonded to the carrying substrate. The sub-substrates of the blocks are removed.Type: GrantFiled: August 18, 2017Date of Patent: January 8, 2019Assignee: Genesis Photonics Inc.Inventors: Shao-Ying Ting, Yan-Ting Lan, Jing-En Huang, Yi-Ru Huang
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Patent number: 10177272Abstract: A method for manufacturing a light-emitting diode (LED) is provided. The method includes following steps. A LED wafer including a substrate and a plurality of light-emitting units formed thereon is provided. At least a portion of the substrate is removed. The LED wafer is fixed on an extensible membrane, wherein the light-emitting unit faces the extensible membrane. The LED wafer is broken to form a plurality of LED dices separated from each other, wherein each LED dice includes at least one light-emitting unit. The extensible membrane is expanded to make a distance between any two of the LED dices become larger.Type: GrantFiled: August 7, 2017Date of Patent: January 8, 2019Assignee: GENESIS PHOTONICS INC.Inventors: Shao-Ying Ting, Jing-En Huang
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Publication number: 20180374892Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.Type: ApplicationFiled: August 13, 2018Publication date: December 27, 2018Inventors: Tsung-Syun Huang, Chih-Chung Kuo, Jing-En Huang, Shao-Ying Ting
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Publication number: 20180374998Abstract: A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer, respectively. The light emitting unit is disposed on the light transmissive layer and at least a part of the first electrode and a part of the second electrode are exposed by the light transmissive layer. The encapsulant encapsulates the light emitting unit and at least exposes a part of the first electrode and a part of the second electrode. Each of the first electrode and the second electrode extends outward from the epitaxial structure layer, and covers at least a part of an upper surface of the encapsulant, respectively.Type: ApplicationFiled: August 13, 2018Publication date: December 27, 2018Applicant: Genesis Photonics Inc.Inventors: Shao-Ying Ting, Kuan-Chieh Huang, Jing-En Huang, Yu-Feng Lin, Yi-Ru Huang
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Patent number: 10164145Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.Type: GrantFiled: January 1, 2018Date of Patent: December 25, 2018Assignee: Genesis Photonics Inc.Inventors: Shao-Ying Ting, Kuan-Chieh Huang, Jing-En Huang, Yi-Ru Huang, Sie-Jhan Wu, Long-Lin Ke
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Publication number: 20180337310Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.Type: ApplicationFiled: July 30, 2018Publication date: November 22, 2018Applicant: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Tung-Lin Chuang, Yan-Ting Lan, Sheng-Tsung Hsu, Chih-Ming Shen, Jing-En Huang, Teng-Hsien Lai, Hung-Chuan Mai, Kuan-Chieh Huang, Shao-Ying Ting
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Patent number: 10134950Abstract: A ?LED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the ?LED is also provided.Type: GrantFiled: August 18, 2017Date of Patent: November 20, 2018Assignee: Genesis Photonics Inc.Inventors: Shao-Ying Ting, Yan-Ting Lan, Jing-En Huang, Yi-Ru Huang
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Publication number: 20180261727Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.Type: ApplicationFiled: May 16, 2018Publication date: September 13, 2018Applicant: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Tung-Lin Chuang, Yan-Ting Lan, Sheng-Tsung Hsu, Chih-Ming Shen, Jing-En Huang, Teng-Hsien Lai, Hung-Chuan Mai, Kuan-Chieh Huang, Shao-Ying Ting, Cheng-Pin Chen, Wei-Chen Chien, Chih-Chin Cheng, Chih-Hung Tseng
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Patent number: D872701Type: GrantFiled: June 11, 2018Date of Patent: January 14, 2020Assignee: GENESIS PHOTONICS INC.Inventors: Shao-Ying Ting, Yan-Ting Lan, Jing-En Huang, Yi-Ru Huang