Abstract: Involved is an isolated antigen binding protein, being capable of binding CCR8 derived from a primate animal. Further involved are a pharmaceutical composition comprising the antigen binding protein, and an application of the antigen binding protein and/or the pharmaceutical composition in the prevention and/or treatment of a tumor or a cancer.

Abstract: Provided is a fermentation fungal substance of Astragalus membranaceus/Paecilomyces cicadae and its use. The fermentation fungal substance is obtained by solid fermentation with Astragalus membranaceus powder as a fermentation substrate and Paecilomyces cicadae as a fermentation strain. The fermentation fungal substance of Astragalus membranaceus/Paecilomyces cicadae in the present disclosure plays a significant role in treating hyperuricemia and/or hypertriglyceridemia.

Abstract: A method for a pimavanserin solid preparation. The method improves the fluidity of pimavanserin powder during preparation, can improve the stability of the content of an active ingredient in the solid preparation, and has the characteristics of rapid dissolution and release and good compression moldability.

Abstract: Provided is a fermentation fungal substance of Astragalus membranaceus/Paecilomyces cicadae and its use. The fermentation fungal substance is obtained by solid fermentation with Astragalus membranaceus powder as a fermentation substrate and Paecilomyces cicadae as a fermentation strain. The fermentation fungal substance of Astragalus membranaceus/Paecilomyces cicadae in the present disclosure plays a significant role in treating hyperuricemia and/or hypertriglyceridemia.

Abstract: The disclosure discloses an ankle prosthesis hydraulic drive circuit for achieving damping control and energy recovery, belonging to the technical field of prosthesiss and orthotic devices. The hydraulic drive circuit particularly includes a motor, a hydraulic pump, a first check valve, a first high-pressure energy accumulator, a three-position four-way valve, an electromagnetic normally-closed valve, a second high-pressure energy accumulator, a single-rod hydraulic cylinder, an electromagnetic normally-opened valve, a low-pressure energy accumulator, a second check valve, an oil inlet line, an oil outlet line, a first line and a second line. The hydraulic drive circuit provided by the disclosure is capable of outputting enough peak power to meet a normal walking demand, and meanwhile actively controlling the damping of the circuit and recycling energy during the walking.

Abstract: The disclosure discloses an ankle prosthesis hydraulic drive circuit for achieving damping control and energy recovery, belonging to the technical field of prosthesiss and orthotic devices. The hydraulic drive circuit particularly includes a motor, a hydraulic pump, a first check valve, a first high-pressure energy accumulator, a three-position four-way valve, an electromagnetic normally-closed valve, a second high-pressure energy accumulator, a single-rod hydraulic cylinder, an electromagnetic normally-opened valve, a low-pressure energy accumulator, a second check valve, an oil inlet line, an oil outlet line, a first line and a second line. The hydraulic drive circuit provided by the disclosure is capable of outputting enough peak power to meet a normal walking demand, and meanwhile actively controlling the damping of the circuit and recycling energy during the walking.

Abstract: The present invention discloses a pharmaceutical composition that includes rivaroxaban and one or more excipient in a solid dosage form and methods for making the same. Methods for making compositions of the present invention includes powderizing rivaroxaban by centrifugal wet granulation to form compositions suitable for solid oral dosage form. Pharmaceutical dosage forms produced by methods of the present invention are more homogenous, smoother, and have better rheological properties, better compressibility, and much easier to make. They are much lower in cost and also easier to produce at industrial scales.

Abstract: In at least some embodiments, the present invention relates to an air cleaner having a housing portion, and a low profile rain cover having an opening on an underside of the cover to allow unfiltered air to enter into the air cleaner. Also, in at least some embodiments, the present invention relates to an air cleaner including a housing and an additional component by which the air cleaner is capable of being directly coupled to a carburetor inlet. In some such embodiments, one or more protrusions can be provided within a channel formed by the housing/additional component to influence air flow. Further, in at least some embodiments, the present invention relates to an air cleaner having a shaped wall formed on a housing portion, where the shaped wall includes both an interior surface and an exterior surface by which air flowing within the air cleaner is imparted with helical motion.

Abstract: The disclosed subject matter includes a method of producing zinc oxide (ZnO) single crystals in an enclosure. The ZnO single crystals have a low concentration of lithium and hydrogen impurities.

Abstract: In at least some embodiments, the present invention relates to an air cleaner having a housing portion, and a low profile rain cover having an opening on an underside of the cover to allow unfiltered air to enter into the air cleaner. Also, in at least some embodiments, the present invention relates to an air cleaner including a housing and an additional component by which the air cleaner is capable of being directly coupled to a carburetor inlet. In some such embodiments, one or more protrusions can be provided within a channel formed by the housing/additional component to influence air flow. Further, in at least some embodiments, the present invention relates to an air cleaner having a shaped wall formed on a housing portion, where the shaped wall includes both an interior surface and an exterior surface by which air flowing within the air cleaner is imparted with helical motion.

Abstract: The disclosed subject matter includes a method of producing zinc oxide (ZnO) single crystals in an enclosure. The ZnO single crystals have a low concentration of lithium and hydrogen impurities.

Abstract: A semiconductor structure includes a substrate which may be formed from a ZnS single crystal of wurtzite (2H) structure with a predetermined crystal orientation, and which has a first surface and a second surface. The structure includes a layer of a group III-nitride crystalline material deposited as an epitaxial layer on the first surface of the substrate. In one embodiment, the group III-nitride deposit is epitaxially grown using a MOCVD (or MOVPE) technique or a HVPE technique or a combination thereof. There may be a mask and/or a buffer layer on the first surface and/or a protective layer on the second surface.

Abstract: In at least some embodiments, the present invention relates to an air cleaner having a housing portion, and a low profile rain cover having an opening on an underside of the cover to allow unfiltered air to enter into the air cleaner. Also, in at least some embodiments, the present invention relates to an air cleaner including a housing and an additional component by which the air cleaner is capable of being directly coupled to a carburetor inlet. In some such embodiments, one or more protrusions can be provided within a channel formed by the housing/additional component to influence air flow. Further, in at least some embodiments, the present invention relates to an air cleaner having a shaped wall formed on a housing portion, where the shaped wall includes both an interior surface and an exterior surface by which air flowing within the air cleaner is imparted with helical motion.

Abstract: Zinc sulfide (ZnS) single crystals and multi-grain ZnS crystals are suitable for many applications. The disclosed method produces ZnS single crystals or multi-grain ZnS crystals. More specifically, ZnS single crystals or multi-grain ZnS crystals of pure or substantially pure hexagonal wurtzite structure with sufficiently high purity and crystalline perfection to be used to fabricate components and devices including but not limited to optical components (useful in the infrared (IR) & visible spectrum range of 0.34-14 ?m), photoluminescence devices, cathode luminescence devices, electroluminescence devices, semiconductor devices, and IR laser gain mediums (in the wave length range of 1-5 ?m).

Abstract: In at least some embodiments, the present invention relates to an air cleaner having a housing portion, and a low profile rain cover having an opening on an underside of the cover to allow unfiltered air to enter into the air cleaner. Also, in at least some embodiments, the present invention relates to an air cleaner including a housing and an additional component by which the air cleaner is capable of being directly coupled to a carburetor inlet. In some such embodiments, one or more protrusions can be provided within a channel formed by the housing/additional component to influence air flow. Further, in at least some embodiments, the present invention relates to an air cleaner having a shaped wall formed on a housing portion, where the shaped wall includes both an interior surface and an exterior surface by which air flowing within the air cleaner is imparted with helical motion.

Abstract: A composite wafer comprises a single crystal substrate having first and second sides; a first III-nitride single crystal layer disposed on the first side of the substrate and being defined by a thickness; and a second III-nitride single crystal layer disposed on the second side of the single crystal substrate and being defined by a thickness. The thickness of each III-nitride single crystal layer is substantially the same. The composite wafer may be used in the manufacture of a semiconductor device or a freestanding wafer.

Abstract: A semiconductor structure includes a substrate which may be formed from a ZnS single crystal of wurtzite (2H) structure with a predetermined crystal orientation, and which has a first surface and a second surface. The structure includes a layer of a group III-nitride crystalline material deposited as an epitaxial layer on the first surface of the substrate. In one embodiment, the group III-nitride deposit is epitaxially grown using a MOCVD (or MOVPE) technique or a HVPE technique or a combination thereof. There may be a mask and/or a buffer layer on the first surface and/or a protective layer on the second surface.

Abstract: A crystal growth setup within a physical vapor transport growth furnace system for producing AlN monocrystal boules at high temperatures includes a crucible effective to contain an AlN source material and a growing AlN crystal boule. This crucible has a thin wall thickness in at least that portion housing the growing AlN crystal boule. Other components include a susceptor, in case of an inductive heating, or a heater, in case of a resistive heating, a thermal insulation enclosing the susceptor or heater effective to provide a thermal gradient inside the crucible in the range of 5-100° C./cm and a furnace chamber capable of being operated from a vacuum (<0.1 torr) to a gas pressure of at least 4000 torr through filling or flowing a nitrogen gas or a mixture of nitrogen gas and argon gas. The high temperatures contribute to a high boule growth rate and the thin wall thickness contributes to reduced imparted stress during boule removal.

Abstract: A crystal growth setup within a physical vapor transport growth furnace system for producing AlN monocrystal boules at high temperatures includes a crucible effective to contain an AlN source material and a growing AlN crystal boule. This crucible has a thin wall thickness in at least that portion housing the growing AlN crystal boule. Other components include a susceptor, in case of an inductive heating, or a heater, in case of a resistive heating, a thermal insulation enclosing the susceptor or heater effective to provide a thermal gradient inside the crucible in the range of 5-100° C./cm and a furnace chamber capable of being operated from a vacuum (<0.1 torr) to a gas pressure of at least 4000 torr through filling or flowing a nitrogen gas or a mixture of nitrogen gas and argon gas. The high temperatures contribute to a high boule growth rate and the thin wall thickness contributes to reduced imparted stress during boule removal.

Abstract: There is provided a method for growing one or more single crystal ZnO boules within a physical vapor transport furnace system. This method includes the steps of: (a.) placing a source material at a first end of an interior crucible enclosure and placing one or more seed crystals at an opposing second end of the interior crucible enclosure with the seed crystal and the source material separated by a predetermined distance; (b.) heating the crucible, the one or more seed crystals and the source material to predetermined temperatures in such way that the temperature of the source material is higher than the temperature of the seed crystal; (c.) maintaining a pressure within the interior crucible enclosure through flowing a gas mixture; and (d) maintaining a temperature distribution within the crucible enclosure thereby causing a ZnO boule growth on each one of the one or more seed crystals. The ZnO may be doped with desired additional elements.