Abstract: A plasmonic grating sensor having periodic arrays of vertically aligned plasmonic nanopillars, nanowires, or both with an interparticle pitch ranging from ?/8-2?, where ? is the incident wavelength of light divided by the effective index of refraction of the sample; a coupled-plasmonic array sensor having vertically aligned periodic arrays of plasmonically coupled nanopillars, nanowires, or both with interparticle gaps sufficient to induce overlap between the plasmonic evanescent fields from neighboring nanoparticles, typically requiring edge-to-edge separations of less than 20 nm; and a plasmo-photonic array sensor having a double-resonant, periodic array of vertically aligned subarrays of 1 to 25 plasmonically coupled nanopillars, nanowires, or both where the subarrays are periodically spaced at a pitch on the order of a wavelength of light.

Abstract: A plasmonic grating sensor having periodic arrays of vertically aligned plasmonic nanopillars, nanowires, or both with an interparticle pitch ranging from ?/8-2?, where ? is the incident wavelength of light divided by the effective index of refraction of the sample; a coupled-plasmonic array sensor having vertically aligned periodic arrays of plasmonically coupled nanopillars, nanowires, or both with interparticle gaps sufficient to induce overlap between the plasmonic evanescent fields from neighboring nanoparticles, typically requiring edge-to-edge separations of less than 20 nm; and a plasmo-photonic array sensor having a double-resonant, periodic array of vertically aligned subarrays of 1 to 25 plasmonically coupled nanopillars, nanowires, or both where the subarrays are periodically spaced at a pitch on the order of a wavelength of light.

Abstract: A metamaterial thin film with plasmonic properties formed by depositing metallic films by atomic layer deposition onto a substrate to form a naturally occurring mosaic-like nanostructure having two-dimensional features with air gaps between the two-dimensional features. Due to the unique deposition nanostructure, plasmonic thin films of metal or highly conducting materials can be produced on any substrate, including fabrics and biological materials. In addition, these plasmonic materials can be used in conjunction with geometric patterns that may be used to create multiple resonance plasmonic metamaterials.

Abstract: A method of making a semiconductor material by pretreating a semiconductor substrate having a native oxide on the substrate surface under vacuum with hydrogen plasma to remove and/or modify the native oxide. After plasma exposure, a high-k dielectric is deposited in-situ onto the substrate using atomic layer deposition. There is no break in the vacuum between the plasma exposure and the atomic layer deposition. Also disclosed is the related semiconductor/dielectric material stack.

Abstract: A metamaterial thin film with plasmonic properties formed by depositing metallic films by atomic layer deposition onto a substrate to form a naturally occurring mosaic-like nanostructure having two-dimensional features with air gaps between the two-dimensional features. Due to the unique deposition nanostructure, plasmonic thin films of metal or highly conducting materials can be produced on any substrate, including fabrics and biological materials. In addition, these plasmonic materials can be used in conjunction with geometric patterns that may be used to create multiple resonance plasmonic metamaterials.

Abstract: A plasmonic grating sensor having periodic arrays of vertically aligned plasmonic nanopillars, nanowires, or both with an interparticle pitch ranging from ?/8?2?, where ? is the incident wavelength of light divided by the effective index of refraction of the sample; a coupled-plasmonic array sensor having vertically aligned periodic arrays of plasmonically coupled nanopillars, nanowires, or both with interparticle gaps sufficient to induce overlap between the plasmonic evanescent fields from neighboring nanoparticles, typically requiring edge-to-edge separations of less than 20 nm; and a plasmo-photonic array sensor having a double-resonant, periodic array of vertically aligned subarrays of 1 to 25 plasmonically coupled nanopillars, nanowires, or both where the subarrays are periodically spaced at a pitch on the order of a wavelength of light.

Abstract: An article having: a retroreflective optical element and a plasmonic material on the optical element. A method of: performing an optical measurement on a substrate having a plurality of the articles.

Abstract: An apparatus comprising a substrate and at least two nanowires on the substrate, the nanowires comprising a core and a metal shell, wherein the core is selected from the group consisting of a semiconductor and a dielectric, thereby forming a nanowire-composite to allow plasmon coupling for enhancements of the electric fields and enhancements of the surface enhanced Raman signal (SERS) and enhancements of the chemical or biological specificity and sensitivity. A method of making a SERS-active substrate comprising providing a substrate and affixing a plurality of nanowires on the substrate thereby forming a nano-composite, creating plasmon coupling leading to enhanced electric fields in the vicinity of the nanowires and enhancements of the surface enhanced Raman signal (SERS) and enhancements of the chemical or biological specificity and sensitivity.

Abstract: An article having: a retroreflective optical element and a plasmonic material on the optical element. A method of: performing an optical measurement on a substrate having a plurality of the articles.

Abstract: An apparatus comprising a mechanically stable substrate selected from the group consisting of a semiconductor, metal, and dielectric and at least two nanowires on the substrate, the nanowires comprising a core and a metal shell, wherein the core is selected from the group consisting of a semiconductor and a dielectric, thereby forming a nanowire-composite to allow plasmon coupling for enhancements of the electric fields and enhancements of the surface enhanced Raman signal (SERS) and enhancements of the chemical or biological specificity and sensitivity.

Abstract: Epitaxial Si-Ge heterostructures are formed by depositing a layer of amorphous Si-Ge on a silicon wafer. The amorphous Si-Ge on the silicon wafer is then subjected to a wet oxidation in order to form an epitaxial Si-Ge heterostructure. Any size wafer may be used and no special precaustions need be taken to ensure a clean amorphous Si-Ge/Si interface.