Patents by Inventor Sharma V. Pamarthy
Sharma V. Pamarthy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9070633Abstract: Embodiments of the present disclosure relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present disclosure provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.Type: GrantFiled: May 21, 2014Date of Patent: June 30, 2015Assignee: APPLIED MATERIALS, INC.Inventors: Roy C. Nangoy, Saravjeet Singh, Jon C. Farr, Sharma V. Pamarthy, Ajay Kumar
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Publication number: 20140256148Abstract: Embodiments of the present disclosure relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present disclosure provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.Type: ApplicationFiled: May 21, 2014Publication date: September 11, 2014Inventors: Roy C. NANGOY, Saravjeet SINGH, Jon C. FARR, Sharma V. PAMARTHY, Ajay KUMAR
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Patent number: 8753474Abstract: Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present invention provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.Type: GrantFiled: September 9, 2010Date of Patent: June 17, 2014Assignee: Applied Materials, Inc.Inventors: Roy C. Nangoy, Saravjeet Singh, Jon C. Farr, Sharma V. Pamarthy, Ajay Kumar
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Patent number: 8158522Abstract: Methods of forming deep trenches in substrates are described. A method includes providing a substrate with a patterned film disposed thereon, the patterned film including a trench having a first width and a pair of sidewalls, the trench exposing the top surface of the substrate. The method also includes forming a material layer over the patterned film and conformal with the trench. The method also includes etching the material layer to form sidewall spacers along the pair of sidewalls of the trench, the sidewall spacers reducing the first width of the trench to a second width. The method also includes etching the substrate to form a deep trench in the substrate, the deep trench undercutting at least a portion of the sidewall spacers.Type: GrantFiled: September 10, 2010Date of Patent: April 17, 2012Assignee: Applied Materials, Inc.Inventors: Khalid M. Sirajuddin, Digvijay Raorane, Jon C. Farr, Sharma V. Pamarthy
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Publication number: 20110217832Abstract: Methods of filling deep trenches in substrates are described. A method includes providing a substrate with a deep trench formed therein. The method also includes forming a dielectric layer conformal with the substrate and the deep trench. The method also includes, with the entire portion of the dielectric layer conformal with the deep trench exposed, removing at least a portion, but not all, of the dielectric layer at the top of the deep trench with a relatively low bias plasma etch process.Type: ApplicationFiled: September 10, 2010Publication date: September 8, 2011Inventors: Digvijay Raorane, Khalid M. Sirajuddin, Jon C. Farr, Sharma V. Pamarthy
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Publication number: 20110201205Abstract: Methods of forming deep trenches in substrates are described. A method includes providing a substrate with a patterned film disposed thereon, the patterned film including a trench having a first width and a pair of sidewalls, the trench exposing the top surface of the substrate. The method also includes forming a material layer over the patterned film and conformal with the trench. The method also includes etching the material layer to form sidewall spacers along the pair of sidewalls of the trench, the sidewall spacers reducing the first width of the trench to a second width. The method also includes etching the substrate to form a deep trench in the substrate, the deep trench undercutting at least a portion of the sidewall spacers.Type: ApplicationFiled: September 10, 2010Publication date: August 18, 2011Inventors: Khalid M. Sirajuddin, Digvijay Raorane, Jon C. Farr, Sharma V. Pamarthy
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Publication number: 20110073564Abstract: Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present invention provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.Type: ApplicationFiled: September 9, 2010Publication date: March 31, 2011Applicant: APPLIED MATERIALS, INC.Inventors: Roy C. Nangoy, Saravjeet Singh, Jon C. Farr, Sharma V. Pamarthy, Ajay Kumar
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Publication number: 20090272717Abstract: Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels.Type: ApplicationFiled: March 19, 2009Publication date: November 5, 2009Applicant: APPLIED MATERIALS, INC.Inventors: Sharma V. Pamarthy, Jon C. Farr, Khalid Sirajuddin, Ezra Robert Gold, James P. Cruse, Scott Olszewski, Roy C. Nangoy, Saravjeet Singh, Douglas A. Buchberger, JR., Jared Ahmad Lee, Chunlei Zhang
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Patent number: 6979652Abstract: Openings of variable shape are made sequentially by alternately etching an opening in silicon and depositing a conformal fluorocarbon polymer on the sidewalls. This polymer protects the sidewalls of the opening from further etching. An isotropic etch can be carried out to change the profile of the etched feature, and for lift-off of the etched feature from the silicon substrate.Type: GrantFiled: April 8, 2002Date of Patent: December 27, 2005Assignee: Applied Materials, Inc.Inventors: Anisul Khan, Sharma V Pamarthy, Sanjay Thekdi, Ajay Kumar
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Patent number: 6905616Abstract: Micro devices are formed in situ in a high density in a substrate comprising a masked silicon layer over a stop layer of a silicon compound, by anisotropically etching the desired feature in the silicon layer, overetching to form a notch at the silicon-stop layer interface, depositing a protective fluorocarbon polymer layer on the sidewalls and bottom of the etched silicon layer, and isotropically etching to separate the etched feature from the stop layer. This method avoids the problems of stiction common in other methods of forming micro devices.Type: GrantFiled: March 5, 2003Date of Patent: June 14, 2005Assignee: Applied Materials, Inc.Inventors: Ajay Kumar, Anisul H Khan, Sanjay M Thekdi, Sharma V Pamarthy
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Patent number: 6897155Abstract: A method for operating a plasma reactor to etch high-aspect-ratio features on a workpiece in a vacuum chamber. The method comprises the performance of an etch process followed by a flash process. During the etch process, a first gas is supplied into the vacuum chamber, and a plasma of the first gas is maintained for a first period of time. The plasma of the first gas comprises etchant and passivant species. During the flash process, a second gas comprising a deposit removal gas is supplied into the vacuum chamber, and a plasma of the second gas is maintained for a second period of time. The DC voltage between the workpiece and the plasma of the second gas during the second period of time is significantly less than the DC voltage between the workpiece and the plasma of the first gas during the first period of time.Type: GrantFiled: August 14, 2002Date of Patent: May 24, 2005Assignee: Applied Materials, Inc.Inventors: Ajay Kumar, Anisul H. Khan, Dragan Podlesnik, Sharma V. Pamarthy, Axel Henke, Stephan Wege, Virinder Grewal
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Publication number: 20040173575Abstract: Micro devices are formed in situ in a high density in a substrate comprising a masked silicon layer over a stop layer of a silicon compound, by anisotropically etching the desired feature in the silicon layer, overetching to form a notch at the silicon-stop layer interface, depositing a protective fluorocarbon polymer layer on the sidewalls and bottom of the etched silicon layer, and isotropically etching to separate the etched feature from the stop layer. This method avoids the problems of stiction common in other methods of forming micro devices.Type: ApplicationFiled: March 5, 2003Publication date: September 9, 2004Inventors: Ajay Kumar, Anisul H. Khan, Sanjay M. Thekdi, Sharma V. Pamarthy
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Publication number: 20040033697Abstract: A method for operating a plasma reactor to etch high-aspect-ratio features on a workpiece in a vacuum chamber. The method comprises the performance of an etch process followed by a flash process. During the etch process, a first gas is supplied into the vacuum chamber, and a plasma of the first gas is maintained for a first period of time. The plasma of the first gas comprises etchant and passivant species. During the flash process, a second gas comprising a deposit removal gas is supplied into the vacuum chamber, and a plasma of the second gas is maintained for a second period of time. The DC voltage between the workpiece and the plasma of the second gas during the second period of time is significantly less than the DC voltage between the workpiece and the plasma of the first gas during the first period of time.Type: ApplicationFiled: August 14, 2002Publication date: February 19, 2004Applicants: Applied Materials, Inc., Infineon TechnologiesInventors: Ajay Kumar, Anisul H. Khan, Dragan Podlesnik, Sharma V. Pamarthy, Axel Henke, Stephan Wege, Virinder Grewal
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Publication number: 20030189024Abstract: Openings of variable shape are made sequentially by alternately etching an opening in silicon and depositing a conformal fluorocarbon polymer on the sidewalls. This polymer protects the sidewalls of the opening from further etching. An isotropic etch can be carried out to change the profile of the etched feature, and for lift-off of the etched feature from the silicon substrate.Type: ApplicationFiled: April 8, 2002Publication date: October 9, 2003Applicant: Applied Materials Inc.Inventors: Anisul Khan, Sharma V. Pamarthy, Sanjay Thekdi, Ajay Kumar
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Publication number: 20030153195Abstract: A method and apparatus for modulating the bias power applied to a wafer support pedestal within a plasma etch reactor. The modulation has an on/off duty cycle of between 10 and 90 percent. Such modulation of the bias power substantially improves the verticality of the etched features located near the edge of a semiconductor wafer as the wafer is being etched in a plasma etch reactor.Type: ApplicationFiled: February 13, 2002Publication date: August 14, 2003Applicant: Applied Materials, Inc.Inventors: Elisabeth Weikmann, Aduato Diaz, Sharma V. Pamarthy, Ajay Kumar, Padmapani C. Nallan
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Patent number: 6593244Abstract: A process for etching a pattern-masked conductor substrate anisotropically so as to obtain very high etch rates comprising adding a polymer-forming fluorocarbon gas and an etch gas at high flow rates to an etch chamber at etching pressures of 77 millitorr to 100 Torr using a high source power and bias power to the substrate support electrode to form a high density plasma. The gases can be added together, sequentially or alternately.Type: GrantFiled: September 11, 2000Date of Patent: July 15, 2003Assignee: Applied Materials Inc.Inventors: Yiqiong Wang, Anisul Khan, Ajay Kumar, Dragan Podlesnik, Sharma V. Pamarthy