Patents by Inventor Sharon Duvdevani

Sharon Duvdevani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11651509
    Abstract: A method for process control of a semiconductor structure fabricated by a series of fabrication steps, the method comprising obtaining an image of the semiconductor structure indicative of at least two individual fabrication steps; wherein the image is generated by scanning the semiconductor structure with a charged particle beam and collecting signals emanating from the semiconductor structure; and processing, by a hardware processor, the image to determining a parameter of the semiconductor structure, wherein processing includes measuring step/s from among the fabrication steps as an individual feature.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: May 16, 2023
    Assignee: Applied Materials Israel Ltd.
    Inventors: Roman Kris, Roi Meir, Sahar Levin, Ishai Schwarzband, Grigory Klebanov, Shimon Levi, Efrat Noifeld, Hiroshi Miroku, Taku Yoshizawa, Kasturi Saha, Sharon Duvdevani-Bar, Vadim Vereschagin
  • Patent number: 11476081
    Abstract: A method, non-transitory computer readable medium and an evaluation system for evaluating an intermediate product related to a three dimensional NAND memory unit. The evaluation system may include an imager and a processing circuit. The imager may be configured to obtain, via an open gap, an electron image of a portion of a structural element that belongs to an intermediate product. The structural element may include a sequence of layers that include a top layer that is followed by alternating nonconductive layers and recessed conductive layers. The imager may include electron optics configured to scan the portion of the structural element with an electron beam that is oblique to a longitudinal axis of the open gap. The processing circuit is configured to evaluate the intermediate product based on the electron image. The open gap (a) exhibits a high aspect ratio, (b) has a width of nanometric scale, and (c) is formed between structural elements of the intermediate product.
    Type: Grant
    Filed: June 30, 2020
    Date of Patent: October 18, 2022
    Assignee: APPLIED MATERIALS ISRAEL LTD.
    Inventors: Roman Kris, Vadim Vereschagin, Assaf Shamir, Elad Sommer, Sharon Duvdevani-Bar, Meng Li Cecilia Lim
  • Patent number: 11443420
    Abstract: There is provided a system and method of generating a metrology recipe usable for examining a semiconductor specimen, comprising: obtaining a first image set comprising a plurality of first images captured by an examination tool, obtaining a second image set comprising a plurality of second images, wherein each second image is simulated based on at least one first image, wherein each second image is associated with ground truth data; performing a first test on the first image set and a second test on the second image set in accordance with a metrology recipe configured with a first parameter set, and determining, in response to a predetermined criterion not being met, to select a second parameter set, configure the metrology recipe with the second parameter set, and repeat the first test and the second test in accordance with the metrology recipe configured with the second parameter set.
    Type: Grant
    Filed: December 28, 2020
    Date of Patent: September 13, 2022
    Assignee: Applied Materials Israel Ltd.
    Inventors: Roman Kris, Grigory Klebanov, Einat Frishman, Tal Orenstein, Meir Vengrover, Noa Marom, Ilan Ben-Harush, Rafael Bistritzer, Sharon Duvdevani-Bar
  • Publication number: 20220207681
    Abstract: There is provided a system and method of generating a metrology recipe usable for examining a semiconductor specimen, comprising: obtaining a first image set comprising a plurality of first images captured by an examination tool, obtaining a second image set comprising a plurality of second images, wherein each second image is simulated based on at least one first image, wherein each second image is associated with ground truth data; performing a first test on the first image set and a second test on the second image set in accordance with a metrology recipe configured with a first parameter set, and determining, in response to a predetermined criterion not being met, to select a second parameter set, configure the metrology recipe with the second parameter set, and repeat the first test and the second test in accordance with the metrology recipe configured with the second parameter set.
    Type: Application
    Filed: December 28, 2020
    Publication date: June 30, 2022
    Inventors: Roman KRIS, Grigory KLEBANOV, Einat FRISHMAN, Tal ORENSTEIN, Meir VENGROVER, Noa MAROM, Ilan BEN-HARUSH, Rafael BISTRITZER, Sharon DUVDEVANI-BAR
  • Publication number: 20210383529
    Abstract: A method for process control of a semiconductor structure fabricated by a series of fabrication steps, the method comprising obtaining an image of the semiconductor structure indicative of at least two individual fabrication steps; wherein the image is generated by scanning the semiconductor structure with a charged particle beam and collecting signals emanating from the semiconductor structure; and processing, by a hardware processor, the image to determining a parameter of the semiconductor structure, wherein processing includes measuring step/s from among the fabrication steps as an individual feature.
    Type: Application
    Filed: October 31, 2019
    Publication date: December 9, 2021
    Inventors: Roman KRIS, Roi MEIR, Sahar LEVIN, Ishai SCHWARZBAND, Grigory KLEBANOV, Shimon LEVI, Efrat NOIFELD, Hiroshi MIROKU, Taku YOSHIZAWA, Kasturi SAHA, Sharon DUVDEVANI-BAR, Vadim VERESCHAGIN
  • Patent number: 11056404
    Abstract: An evaluation system that may include an imager; and a processing circuit. The imager may be configured to obtain an electron image of a hole that is formed by an etch process, the hole exposes at least one layer of a one or more sets of layers, each set of layers comprises layers that differ from each other by their electron yield and belong to an intermediate product. The processing circuit may be configured to evaluate, based on the electron image, whether the hole ended at a target layer of the intermediate product. The intermediate product is manufactured by one or more manufacturing stages of a manufacturing process of a three dimensional NAND memory unit. The hole may exhibit a high aspect ratio, and has a width of a nanometric scale.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: July 6, 2021
    Assignee: APPLIED MATERIALS ISRAEL LTD.
    Inventors: Roman Kris, Grigory Klebanov, Dhananjay Singh Rathore, Einat Frishman, Sharon Duvdevani-Bar, Assaf Shamir, Elad Sommer, Jannelle Anna Geva, Daniel Alan Rogers, Ido Friedler, Avi Aviad Ben Simhon
  • Publication number: 20210193536
    Abstract: An evaluation system that may include an imager; and a processing circuit. The imager may be configured to obtain an electron image of a hole that is formed by an etch process, the hole exposes at least one layer of a one or more sets of layers, each set of layers comprises layers that differ from each other by their electron yield and belong to an intermediate product. The processing circuit may be configured to evaluate, based on the electron image, whether the hole ended at a target layer of the intermediate product. The intermediate product is manufactured by one or more manufacturing stages of a manufacturing process of a three dimensional NAND memory unit. The hole may exhibit a high aspect ratio, and has a width of a nanometric scale.
    Type: Application
    Filed: December 18, 2019
    Publication date: June 24, 2021
    Applicant: APPLIED MATERIALS ISRAEL LTD.
    Inventors: Roman Kris, Grigory Klebanov, Dhananjay Singh Rathore, Einat Frishman, Sharon Duvdevani-Bar, Assaf Shamir, Elad Sommer, Jannelle Anna Geva, Daniel Alan Rogers, Ido Friedler, Avi Aviad Ben Simhon
  • Publication number: 20210066026
    Abstract: A method, non-transitory computer readable medium and an evaluation system for evaluating an intermediate product related to a three dimensional NAND memory unit. The evaluation system may include an imager and a processing circuit. The imager may be configured to obtain, via an open gap, an electron image of a portion of a structural element that belongs to an intermediate product. The structural element may include a sequence of layers that include a top layer that is followed by alternating nonconductive layers and recessed conductive layers. The imager may include electron optics configured to scan the portion of the structural element with an electron beam that is oblique to a longitudinal axis of the open gap. The processing circuit is configured to evaluate the intermediate product based on the electron image. The open gap (a) exhibits a high aspect ratio, (b) has a width of nanometric scale, and (c) is formed between structural elements of the intermediate product.
    Type: Application
    Filed: June 30, 2020
    Publication date: March 4, 2021
    Applicant: APPLIED MATERIALS ISRAEL LTD.
    Inventors: Roman Kris, Vadim Vereschagin, Assaf Shamir, Elad Sommer, Sharon Duvdevani-Bar, Meng Li Cecilia Lim
  • Patent number: 7388978
    Abstract: An electrical circuit inspection method including, for each of a plurality of types of local characteristics, each type occurring at least once within electrical circuitry to be inspected, identifying at least one portion of interest within the electrical circuitry whereat the local characteristic is expected to occur, and inspecting an image of each portion of interest, using an inspection task selected in response to the type of local characteristic expected to occur in the portion of interest.
    Type: Grant
    Filed: November 12, 2003
    Date of Patent: June 17, 2008
    Assignee: Orbotech Ltd.
    Inventors: Sharon Duvdevani, Tally Gilat-Bernshtein, Eyal Klingbell, Meir Mayo, Shmuel Rippa, Zeev Smilansky
  • Patent number: 7206443
    Abstract: A method for inspecting objects comprising: creating a reference image for a representative object, the reference image comprising an at least partially vectorized first representation of boundaries representing the representative object; acquiring an image of an object under inspection comprising a second representation of boundaries representing the object under inspection; and comparing a location of at least some boundaries in the second representation of boundaries to a location of corresponding boundaries in the at least partially vectorized first representation of boundaries, thereby to identify defects.
    Type: Grant
    Filed: August 7, 2000
    Date of Patent: April 17, 2007
    Assignee: Orbotech Ltd.
    Inventors: Sharon Duvdevani, Tally Gilat-Bernshtein, Eyal Klingbell, Meir Mayo, Shmuel Rippa, Zeev Smilansky
  • Patent number: 7181059
    Abstract: A method for inspecting electrical circuits, and a system for carrying out the method, generating a representation of boundaries of elements in an image of an electrical circuit which is under inspection, and analyzing at least some locations of at least some boundaries in the representation of boundaries of elements to identify defects in the electrical circuit.
    Type: Grant
    Filed: November 12, 2003
    Date of Patent: February 20, 2007
    Assignee: Orbotech Ltd.
    Inventors: Sharon Duvdevani, Tally Gilat-Bernshtein, Eyal Klingbell, Meir Mayo, Shmuel Rippa, Zeev Smilansky
  • Publication number: 20040126005
    Abstract: This invention discloses a system and method for inspecting objects, the method including creating a reference image for a representative object, the reference image comprising an at least partially vectorized first representation of boundaries within the image, acquiring an image of an object under inspection comprising a second representation of boundaries within the image, and comparing the second representation of boundaries to said at least partially vectorized first representation of boundaries, thereby to identify defects.
    Type: Application
    Filed: November 12, 2003
    Publication date: July 1, 2004
    Applicant: ORBOTECH LTD.
    Inventors: Sharon Duvdevani, Tally Gilat-Bernshtein, Eyal Klingbell, Meir Mayo, Shmuel Rippa, Zeev Smilansky
  • Publication number: 20040120571
    Abstract: This invention discloses a system and method for inspecting objects, the method including creating a reference image for a representative object, the reference image comprising an at least partially vectorized first representation of boundaries within the image, acquiring an image of an object under inspection comprising a second representation of boundaries within the image, and comparing the second representation of boundaries to said at least partially vectorized first representation of boundaries, thereby to identify defects.
    Type: Application
    Filed: November 12, 2003
    Publication date: June 24, 2004
    Applicant: ORBOTECH LTD.
    Inventors: Sharon Duvdevani, Tally Gilat-Bernshtein, Eyal Klingbell, Meir Mayo, Shmuel Rippa, Zeev Smilansky