Patents by Inventor Shaun CEMBELLA

Shaun CEMBELLA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11802134
    Abstract: A class of organometallic compounds is provided. The compounds correspond in structure to Formula 1 (A)x-M-(OR3)4-x wherein: A is selected from the group consisting of —NR1R2, —N(R4)(CH2)nN(R5R6), —N?C(NR4R5)(NR6R7), OCOR1, halo and Y; R1 and R2 are independently selected from the group consisting of H and a cyclic or acyclic alkyl group having from 1 to 8 carbon atoms, with the proviso that at least one of R1 and R2 must be other than H; R4, R5, R6 and R7 are independently selected from the group consisting of H and an acyclic alkyl group having from 1 to 4 carbon atoms; Y is selected from the group consisting of a 3- to 13-membered heterocyclic radical containing at least one nitrogen atom; R3 is a cyclic or acyclic alkyl group having from 1 to 6 carbon atoms; M is selected from the group consisting of Si, Ge, Sn, Ti, Zr and Hf; x is an integer from 1 to 3; and n is an integer from 1 to 4.
    Type: Grant
    Filed: February 10, 2017
    Date of Patent: October 31, 2023
    Assignee: SEASTAR CHEMICALS ULC
    Inventors: Rajesh Odedra, Cunhai Dong, Shaun Cembella
  • Patent number: 11498938
    Abstract: A method for forming a metal-containing film includes: a) providing at least one substrate; b) delivering to said substrate at least one compound of Formula 1 in the gaseous phase, (R1R2R3 (Si))—Co(CO)4 (Formula 1), wherein R1, R2 and R3 are independently selected lower alkyl groups; and c) simultaneously with or subsequently to step b), delivering to said substrate a co-reagent in the gaseous phase, the co-reagent being lower alcohol. Further, a method of selectively depositing a metal-containing film includes: a) providing at least two substrates comprising different materials, one of said at least two substrates has an affinity for Si and another of said at least two substrates has an affinity for CO; b) delivering to said substrates at least one compound of the Formula 1 in the gaseous phase; and c) simultaneously with or subsequently to step b), delivering to said at least two substrates at least one co-reagent in the gaseous phase.
    Type: Grant
    Filed: September 2, 2020
    Date of Patent: November 15, 2022
    Assignee: SEASTAR CHEMICALS ULC
    Inventors: Rajesh Odedra, Cunhai Dong, Shaun Cembella
  • Publication number: 20220306657
    Abstract: Specific organometallic compounds of Formula I: Qx-Sn-(A1R1?z)4-x or Formula II: Sn(NR2(CH2)nA2)2 useful for the deposition of high purity tin oxide, as well as methods of using such compounds are disclosed. Also disclosed are compositions of organometallic compounds useful for the deposition of high purity tin oxide that in combination improve stability. Also disclosed are processes for dry etching tin oxide with a particular etchant gas and/or a process for dry etching a substrate using a particular etchant gas with a specific additive.
    Type: Application
    Filed: August 28, 2020
    Publication date: September 29, 2022
    Applicant: SEASTAR CHEMICALS ULC
    Inventors: Diana FABULYAK, Rajesh ODEDRA, Wesley Phillip GRAFF, Shaun CEMBELLA, Cassidy CONOVER
  • Publication number: 20210070783
    Abstract: A class of organometallic compounds is provided. The compounds correspond in structure to Formula 1 (A)x-M-(OR3)4-x wherein: A is selected from the group consisting of —NR1R2, —N(R4)(CH2)nN(R5R6), —N?C(NR4R5)(NR6R7), OCOR1, halo and Y; R1 and R2 are independently selected from the group consisting of H and a cyclic or acyclic alkyl group having from 1 to 8 carbon atoms, with the proviso that at least one of R1 and R2 must be other than H; R4, R5, R6 and R7 are independently selected from the group consisting of H and an acyclic alkyl group having from 1 to 4 carbon atoms; Y is selected from the group consisting of a 3- to 13-membered heterocyclic radical containing at least one nitrogen atom; R3 is a cyclic or acyclic alkyl group having from 1 to 6 carbon atoms; M is selected from the group consisting of Si, Ge, Sn, Ti, Zr and Hf; x is an integer from 1 to 3; and n is an integer from 1 to 4.
    Type: Application
    Filed: February 10, 2017
    Publication date: March 11, 2021
    Inventors: Rajesh Odedra, Cunhai Dong, Shaun Cembella
  • Publication number: 20200399300
    Abstract: Organometallic compounds useful in chemical phase deposition processes such as atomic layer deposition (ALD) and chemical vapor deposition (CVD).
    Type: Application
    Filed: September 2, 2020
    Publication date: December 24, 2020
    Applicant: SEASTAR CHEMICALS ULC
    Inventors: Rajesh ODEDRA, Cunhai DONG, Shaun CEMBELLA
  • Publication number: 20180155383
    Abstract: Organometallic compounds, useful in chemical phase deposition processes, having a structure: [{R1R2R3(A))x-M(CO)y]z, wherein R1, R2 and R3 are selected from H, a lower alkyl group and a phenyl group substituted with at least one selected lower alkyl group, where at least one of R1, R2 and R3 must be other than H; M is selected from cobalt, iron, manganese, and chromium group metals; A is selected from Si, Ge, and Sn; wherein: x=1, y=4, and z=1 when M is selected from a cobalt group metal, x=1, y=5, and z=1 when M is selected from a manganese group metal, x=2, y=4, and z=1 when M is selected from a chromium group metal, and x=2, y=4, and z=1 or, alternatively, x=1, y=4, and z=2 when M is selected from an iron group metal.
    Type: Application
    Filed: April 25, 2016
    Publication date: June 7, 2018
    Inventors: Rajesh ODEDRA, Cunhai DONG, Shaun CEMBELLA