Patents by Inventor Shawn Burnham

Shawn Burnham has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High current high voltage GaN field effect transistors and method of fabricating same
    Patent number: 8530978
    Abstract: A field effect transistor (FET) having a source contact to a channel layer, a drain contact to the channel layer, and a gate contact on a barrier layer over the channel layer, the FET including a dielectric layer on the barrier layer between the source contact and the drain contact and over the gate contact, and a field plate on the dielectric layer, the field plate connected to the source contact and extending over a space between the gate contact and the drain contact and the field plate comprising a sloped sidewall in the space between the gate contact and the drain contact.
    Type: Grant
    Filed: December 6, 2011
    Date of Patent: September 10, 2013
    Assignee: HRL Laboratories, LLC
    Inventors: Rongming Chu, Zijian “Ray” Li, Karim S. Boutros, Shawn Burnham