Abstract: A heated filter assembly for heating gas supplied to a substrate processing system includes a housing defining a cavity, an inner surface and an outer surface. A filter element is arranged inside the cavity of the housing with an outer surface thereof in a spaced relationship relative to the inner surface of the housing. A heat transfer element is arranged inside of the filter element and includes an outer surface and an inner cavity. A plurality of projections is arranged on the outer surface of the heat transfer element in direct physical contact with an inner surface of the filter element. A plurality of portions is arranged on the outer surface of the heat transfer element, is spaced from the inner surface of the filter element and is located between the plurality of projections.

Abstract: A multi-station chamber having a symmetric ground plate is disclosed. The multi-station chamber includes four stations, and the four stations are arranged in a square configuration with a rotating mechanism in a center location. A pedestal for supporting a substrate is provided for each of the four stations, each pedestal is disposed in a lower chamber body, and each pedestal includes a carrier ring. The lower chamber body includes outer walls and inner walls to define a space for each of the pedestals of the four chambers. A ground plate is disposed over the inner walls and attached to the outer walls. The ground plate has a center opening and a process opening for each station. The center opening is configured to receive the rotating mechanism at the center location. The process opening has a diameter that is larger than a diameter of the carrier ring at each station, and a symmetric gap is defined between an edge of each process opening defined by the ground plate and an outer edge of a carrier ring.

Abstract: Methods and systems for positioning wafers using a dual side-by-side end effector robot are provided. The methods involve performing place moves using dual side-by-side end effector robots with active wafer position correction. According to various embodiments, the methods may be used for placement into a process module, loadlock or other destination by a dual wafer transfer robot. The methods provide nearly double the throughput of a single wafer transfer schemes by transferring two wafers with the same number of moves.

Abstract: A heated filter assembly for heating gas supplied to a substrate processing system includes a housing defining a cavity, an inner surface and an outer surface. A filter element is arranged inside the cavity of the housing with an outer surface thereof in a spaced relationship relative to the inner surface of the housing. A heat transfer element is arranged inside of the filter element and includes an outer surface and an inner cavity. A plurality of projections is arranged on the outer surface of the heat transfer element in direct physical contact with an inner surface of the filter element. A plurality of portions is arranged on the outer surface of the heat transfer element, is spaced from the inner surface of the filter element and is located between the plurality of projections.

Abstract: Methods and systems for positioning wafers using a dual side-by-side end effector robot are provided. The methods involve performing place moves using dual side-by-side end effector robots with active wafer position correction. According to various embodiments, the methods may be used for placement into a process module, loadlock or other destination by a dual wafer transfer robot. The methods provide nearly double the throughput of a single wafer transfer schemes by transferring two wafers with the same number of moves.

Abstract: Methods and systems for positioning wafers using a dual side-by-side end effector robot are provided. The methods involve performing place moves using dual side-by-side end effector robots with active wafer position correction. According to various embodiments, the methods may be used for placement into a process module, loadlock or other destination by a dual wafer transfer robot. The methods provide nearly double the throughput of a single wafer transfer schemes by transferring two wafers with the same number of moves.

Abstract: Methods and apparatuses that decouple wafer temperature from pre-heat station residence time, thereby improving wafer-to-wafer temperature uniformity, are provided. The methods involve maintaining a desired temperature by varying the distance between the wafer and a heater. In certain embodiments, the methods involve rapidly approaching a predetermined initial distance and then obtaining and maintaining a desired final temperature using closed loop temperature control. In certain embodiments, a heated pedestal supplies the heat. The wafer-pedestal gap may be modulated may be varied by moving the heated pedestal and/or moving the wafer, e.g., via a movable wafer support. Also in certain embodiments, the closed loop control system includes a real time wafer temperature sensor and a servo controlled linear motor for moving the pedestal or wafer support.

Abstract: Methods and apparatus to reduce particle-induced defects on a substrate are provided. In certain embodiments, the methods involve decreasing plasma spread prior to extinguishing the plasma. The plasma is maintained at the decreased plasma spread while particles are evacuated from the processing chamber. In certain embodiments, the methods involve decreasing plasma power prior to extinguishing the plasma. The low-power plasma is maintained while particles are evacuated from the processing chamber.

Abstract: Provided are apparatuses and methods disclosed for wafer processing. Specific embodiments include dual wafer handling systems that transfer wafers from storage cassettes to processing modules and back and aspects thereof. Stacked independent loadlocks that allow venting and pumping operations to work in parallel and may be optimized for particle reduction are provided. Also provided are annular designs for radial top down flow during loadlock vent and pumpdown.

Abstract: A semiconductor processing tool heats wafers using radiant heat and resistive heat in chamber or in a load lock where pressure changes. The wafers are heated in greater part with a resistive heat source until a transition temperature or pressure is reached, then they are heated in greater part with a radiant heat source. Throughput improves for the tool because of the wafers can reach a high temperature uniformly in seconds.

Abstract: Provided are apparatuses and methods disclosed for wafer processing. Specific embodiments include dual wafer handling systems that transfer wafers from storage cassettes to processing modules and back and aspects thereof. Stacked independent loadlocks that allow venting and pumping operations to work in parallel and may be optimized for particle reduction are provided. Also provided are annular designs for radial top down flow during loadlock vent and pumpdown.

Abstract: Methods and apparatuses that decouple wafer temperature from pre-heat station residence time, thereby improving wafer-to-wafer temperature uniformity, are provided. The methods involve maintaining a desired temperature by varying the distance between the wafer and a heater. In certain embodiments, the methods involve rapidly approaching a predetermined initial distance and then obtaining and maintaining a desired final temperature using closed loop temperature control. In certain embodiments, a heated pedestal supplies the heat. The wafer-pedestal gap may be modulated may be varied by moving the heated pedestal and/or moving the wafer, e.g., via a movable wafer support. Also in certain embodiments, the closed loop control system includes a real time wafer temperature sensor and a servo controlled linear motor for moving the pedestal or wafer support.

Abstract: Provided are apparatuses and methods disclosed for wafer processing. Specific embodiments include dual wafer handling systems that transfer wafers from storage cassettes to processing modules and back and aspects thereof. Stacked independent loadlocks that allow venting and pumping operations to work in parallel and may be optimized for particle reduction are provided. Also provided are annular designs for radial top down flow during loadlock vent and pumpdown.

Abstract: A semiconductor processing tool heats wafers using radiant heat and resistive heat in chamber or in a load lock where pressure changes. The wafers are heated in greater part with a resistive heat source until a transition temperature or pressure is reached, then they are heated in greater part with a radiant heat source. Throughput improves for the tool because of the wafers can reach a high temperature uniformly in seconds.

Abstract: Methods and systems for positioning wafers using a dual side-by-side end effector robot are provided. The methods involve performing place moves using dual side-by-side end effector robots with active wafer position correction. According to various embodiments, the methods may be used for placement into a process module, loadlock or other destination by a dual wafer transfer robot. The methods provide nearly double the throughput of a single wafer transfer schemes by transferring two wafers with the same number of moves.

Abstract: Provided are apparatuses and methods disclosed for wafer processing. Specific embodiments include dual wafer handling systems that transfer wafers from storage cassettes to processing modules and back and aspects thereof. Stacked independent loadlocks that allow venting and pumping operations to work in parallel and may be optimized for particle reduction are provided. Also provided are annular designs for radial top down flow during loadlock vent and pumpdown.

Abstract: The present invention generally relates to an end effector that utilizes a gripping mechanism to grip a peripheral edge of the wafer and secure the wafer to the end effector. In one embodiment, the gripping mechanism includes a pair of gripper arms that pivot between a wafer-loading position and a wafer-engaging position. In another embodiment, an active plunger moves linearly between the wafer-loading and wafer-engaging positions. Both the gripper arms and the plunger device are driven by a motor assembly. A force feedback system monitors the force the gripping mechanism exerts on the wafer and, based on the amount of force, controls the operation of the motor assembly to dynamically adjust the position of the gripping mechanism.