Abstract: Methods for assembling multi-chip semiconductor packages, and the resulting assemblies themselves, are disclosed. According to the preferred embodiments of the invention, a first semiconductor chip is affixed to a package substrate and a second semiconductor chip is affixed to at least a portion of a surface of the first semiconductor chip, forming an overhang. Underpinning is interposed for supporting the overhang in resistance to deflection during assembly.

Abstract: A package device (10, 100) has one integrated circuit (22, 122) in a cavity (20, 120) in a package substrate (12, 122) and electrically coupled to one side (50, 150) of the package substrate. A second integrated circuit (32, 132) is mounted on another side of the package device and electrically coupled to that side as well. A third integrated circuit (38, 138) or more may be mounted on the second integrated circuit. Pads (16, 116, 116) useful for testing are present on both sides of the package substrate. The integrated circuits may be tested before final encapsulation to reduce the risk of providing completed packages with non-functional integrated circuits therein.

Abstract: A packaged semiconductor device (20) has a first integrated circuit die (28) having a top surface with active electrical circuitry implemented thereon. The first die (28) is mounted in a cavity (21) of a first heat spreader (22). A second die (36) having electrical circuitry implemented on a top surface is attached to the top surface of the first die (28). Both of the die (28 and 36) are electrically connected to a substrate (24) mounted on the first heat spreader (22). A second heat spreader (40) is mounted on the top surface of the second die (36). The second heat spreader (40) provides an additional path for thermal dissipation of heat generated by the second die (36).

Abstract: A packaged semiconductor device (20) has a first integrated circuit die (28) having a top surface with active electrical circuitry implemented thereon. The first die (28) is mounted in a cavity (21) of a first heat spreader (22). A second die (36) having electrical circuitry implemented on a top surface is attached to the top surface of the first die (28). Both of the die (28 and 36) are electrically connected to a substrate (24) mounted on the first heat spreader (22). A second heat spreader (40) is mounted on the top surface of the second die (36). The second heat spreader (40) provides an additional path for thermal dissipation of heat generated by the second die (36).

Abstract: A package device (10, 100) has one integrated circuit (22, 122) in a cavity (20, 120) in a package substrate (12. 122) and electrically coupled to one side (50, 150) of the package substrate. A second integrated circuit (32, 132) is mounted on another side of the package device and electrically coupled to that side as well. A third integrated circuit (38, 138) or more may be mounted on the second integrated circuit. Pads (16, 116, 116) useful for testing are present on both sides of the package substrate. The integrated circuits may be tested before final encapsulation to reduce the risk of providing completed packages with non-functional integrated circuits therein.

Abstract: A semiconductor device and its method of formation are disclosed wherein a first semiconductor substrate (20) and a second semiconductor substrate (21) are encapsulated in a no lead package (100). In some embodiments, a plurality of off die bond pads (30) is coupled to at least one of the first and second semiconductor substrates (20, 21). In some embodiments, the first semiconductor substrate (20) has a backside (40) which remains exposed after encapsulation.

Abstract: A semiconductor die has three rows or more of bond pads with minimum pitch. The die is mounted on a package substrate having three rows or more of bond fingers and/or conductive rings. The bond pads on the outermost part of the die (nearest the perimeter of the die) are connected by a relatively lower height wire achieved by reverse stitching to the innermost ring(s) or row (farthest from the perimeter of the package substrate) of bond fingers. The innermost row of bond pads is connected by a relatively higher height wire achieved by ball bond to wedge bond to the outermost row of the bond fingers. The intermediate row of bond pads is connected by relatively intermediate height wire by ball bond to wedge bond to the intermediate row of bond fingers. The varying height wire allows for tightly packed bond pads. The structure is adaptable for stacked die.