Patents by Inventor Sheau-Feng TSAI

Sheau-Feng TSAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Constant current semiconductor device having a schottky barrier
    Patent number: 8742533
    Abstract: This invention reveals a constant current semiconductor device of an N-type or a P-type epitaxial layer on a semi-insulating substrate, the device is treated by using a Schottky barrier to cut off current in conduction channels under certain bias and to provide constant current within cut-off voltage and breakdown voltage region between Schottky barrier section/ohmic contact section as the first electrode and the other ohmic contact section as the second electrode respectively, and has excellent characteristics as lower cut-off voltage (Vkp) than bipolar devices and easily gets higher constant current (Ip) by integrating several constant current units.
    Type: Grant
    Filed: August 29, 2011
    Date of Patent: June 3, 2014
    Assignee: Formosa Microsemi Co., Ltd
    Inventors: Sheau-Feng Tsai, Wen-Ping Huang, Tzuu-Chi Hu
  • CONSTANT CURRENT SEMICONDUCTOR DEVICE HAVING A SCHOTTKY BARRIER
    Publication number: 20130049160
    Abstract: This invention reveals a constant current semiconductor device of an N-type or a P-type epitaxial layer on a semi-insulating substrate, the device is treated by using a Schottky barrier to cut off current in conduction channels under certain bias and to provide constant current within cut-off voltage and breakdown voltage region between Schottky barrier section/ohmic contact section as the first electrode and the other ohmic contact section as the second electrode respectively, and has excellent characteristics as lower cut-off voltage (Vkp) than bipolar devices and easily gets higher constant current (Ip) by integrating several constant current units.
    Type: Application
    Filed: August 29, 2011
    Publication date: February 28, 2013
    Applicant: FORMOSA MICROSEMI CO., Ltd.
    Inventors: Sheau-Feng TSAI, Wen-Ping Huang, Tzuu-Chi Hu