Abstract: A Schottky diode with a small footprint and a high-current carrying ability is fabricated by forming an opening that extends into an n-type semiconductor material. The opening is then lined with a metallic material such as platinum. The metallic material is then heated to form a salicide region where the metallic material touches the n-type semiconductor material.

Abstract: A Schottky diode with a small footprint and a high-current carrying ability is fabricated by forming an opening that extends into an n-type semiconductor material. The opening is then lined with a metallic material such as platinum. The metallic material is then heated to form a salicide region where the metallic material touches the n-type semiconductor material.

Abstract: A semiconductor device includes an elongated, blade-shaped semiconductor element isolated from a surrounding region of a semiconductor substrate by buried and side oxide layers. A polysilicon post disposed at one end of the element has a bottom portion extending through the buried oxide to contact the substrate, providing for electrical and thermal coupling between the element and the substrate and for gettering impurities during processing. A device fabrication process employs a selective silicon-on-insulator (SOI) technique including forming trenches in the substrate; passivating the upper portion of the element; and performing a long oxidation to create the buried oxide layer. A second oxidation is used to create an insulating oxide layer on the sidewalls of the semiconductor element, and polysilicon material is used to fill the trenches and to create the post.

Abstract: A semiconductor device includes an elongated, blade-shaped semiconductor element isolated from a surrounding region of a semiconductor substrate by buried and side oxide layers. A polysilicon post disposed at one end of the element has a bottom portion extending through the buried oxide to contact the substrate, providing for electrical and thermal coupling between the element and the substrate and for gettering impurities during processing. A device fabrication process employs a selective silicon-on-insulator (SOI) technique including forming trenches in the substrate; passivating the upper portion of the element; and performing a long oxidation to create the buried oxide layer. A second oxidation is used to create an insulating oxide layer on the sidewalls of the semiconductor element, and polysilicon material is used to fill the trenches and to create the post.

Abstract: A semiconductor device includes an elongated, blade-shaped semiconductor element isolated from a surrounding region of a semiconductor substrate by buried and side oxide layers. A polysilicon post disposed at one end of the element has a bottom portion extending through the buried oxide to contact the substrate, providing for electrical and thermal coupling between the element and the substrate and for gettering impurities during processing. A device fabrication process employs a selective silicon-on-insulator (SOI) technique including forming trenches in the substrate; passivating the upper portion of the element; and performing a long oxidation to create the buried oxide layer. A second oxidation is used to create an insulating oxide layer on the sidewalls of the semiconductor element, and polysilicon material is used to fill the trenches and to create the post.

Abstract: A semiconductor device includes an elongated, blade-shaped semiconductor element isolated from a surrounding region of a semiconductor substrate by buried and side oxide layers. A polysilicon post disposed at one end of the element has a bottom portion extending through the buried oxide to contact the substrate, providing for electrical and thermal coupling between the element and the substrate and for gettering impurities during processing. A device fabrication process employs a selective silicon-on-insulator (SOI) technique including forming trenches in the substrate; passivating the upper portion of the element; and performing a long oxidation to create the buried oxide layer. A second oxidation is used to create an insulating oxide layer on the sidewalls of the semiconductor element, and polysilicon material is used to fill the trenches and to create the post.

Abstract: A semiconductor device includes an elongated, blade-shaped semiconductor element isolated from a surrounding region of a semiconductor substrate by buried and side oxide layers. A polysilicon post disposed at one end of the element has a bottom portion extending through the buried oxide to contact the substrate, providing for electrical and thermal coupling between the element and the substrate and for gettering impurities during processing. A device fabrication process employs a selective silicon-on-insulator (SOI) technique including forming trenches in the substrate; passivating the upper portion of the element; and performing a long oxidation to create the buried oxide layer. A second oxidation is used to create an insulating oxide layer on the sidewalls of the semiconductor element, and polysilicon material is used to fill the trenches and to create the post.

Abstract: A semiconductor device includes a gate to control the semiconductor device, a drain coupled to the gate, a source to form a current path with the drain, which is formed in a well of a first type of material, a field oxide coupled to the gate, and a channel stop formed under the field oxide and formed of a second type of material.