Abstract: A method for tuning a threshold voltage of a transistor is disclosed. A channel layer is formed over a substrate. An interfacial layer is formed over and surrounds the channel layer. A gate dielectric layer is formed over and surrounds the interfacial layer. A dipole layer is formed over and wraps around the gate dielectric layer by performing a cyclic deposition etch process, and the dipole layer includes dipole metal elements and has a substantially uniform thickness. A thermal drive-in process is performed to drive the dipole metal elements in the dipole layer into the gate dielectric layer to form an interfacial dipole surface, and then the dipole layer is removed.

Abstract: A methodology provides for the extraction of local chemical kinetic model constants for use in a reacting flow computational fluid dynamics (CFD) computer code with chemical kinetic computations to optimize the operating conditions or design of the system, including retrofit design improvements to existing systems. The coupled CFD and kinetic computer code are used in combination with data obtained from a matrix of experimental tests to extract the kinetic constants. Local fluid dynamic effects are implicitly included in the extracted local kinetic constants for each particular application system to which the methodology is applied. The extracted local kinetic model constants work well over a fairly broad range of operating conditions for specific and complex reaction sets in specific and complex reactor systems.