Abstract: A semiconductor structure includes a silicon substrate, an aluminum nitride layer and a plurality of grading stress buffer layers. The aluminum nitride layer is disposed on the silicon substrate. The grading stress buffer layers are disposed on the aluminum nitride layer. Each grading stress buffer layer includes a grading layer and a transition layer stacked up sequentially. A chemical formula of the grading layer is Al1-xGaxN, wherein the x value is increased from one side near the silicon substrate to a side away from the silicon substrate, and 0?x?1. A chemical formula of the transition layer is the same as the chemical formula of a side surface of the grading layer away from the silicon substrate. The chemical formula of the transition layer of the grading stress buffer layer furthest from the silicon substrate is GaN.

Abstract: A semiconductor structure includes a silicon substrate, an aluminum nitride layer and a plurality of grading stress buffer layers. The aluminum nitride layer is disposed on the silicon substrate. The grading stress buffer layers are disposed on the aluminum nitride layer. Each grading stress buffer layer includes a grading layer and a transition layer stacked up sequentially. A chemical formula of the grading layer is Al1?xGaxN, wherein the x value is increased from one side near the silicon substrate to a side away from the silicon substrate, and 0?x?1. A chemical formula of the transition layer is the same as the chemical formula of a side surface of the grading layer away from the silicon substrate. The chemical formula of the transition layer of the grading stress buffer layer furthest from the silicon substrate is GaN.

Abstract: A semiconductor structure includes a substrate, an aluminum nitride layer, plural of grading stress buffer layers and a superlattice structure layer. The aluminum nitride layer is disposed on the substrate. The grading stress buffer layers are disposed on the aluminum nitride layer. Each grading stress buffer layer includes a grading layer and a transition layer stacked up sequentially. A chemical formula of the grading layer is Al1?xGaxN, wherein the x value is increased from one side near the substrate to a side away from the substrate, and 0?x?1. A chemical formula of the transition layer is the same as the chemical formula of a side surface of the grading layer away from the substrate. The chemical formula of the transition layer of the grading stress buffer layer furthest from the substrate is GaN. The superlattice structure layer is disposed between the aluminum nitride layer and the grading stress buffer layers.

Abstract: A semiconductor structure includes a silicon substrate, a buffer layer, a nitride-based epitaxial structure layer and multiple discontinuous strain-releasing layers. The buffer layer is disposed on the silicon substrate. The nitride-based epitaxial structure layer is disposed on the buffer layer. The discontinuous strain-releasing layers are disposed between the silicon substrate and the nitride-based epitaxial structure layer, wherein a material of the discontinuous strain-releasing layers is silicon nitride.

Abstract: A semiconductor structure includes a substrate, a first un-doped semiconductor layer, a second un-doped semiconductor layer and at least one doped insertion layer. The first un-doped semiconductor layer is disposed on the substrate. The second un-doped semiconductor layer is disposed on the first un-doped semiconductor layer. The doped insertion layer is disposed between the first un-doped semiconductor layer and the second un-doped semiconductor layer. A chemical formula of the doped insertion layer is InxAlyGa1-x-yN, wherein 0?x?1, 0?y?1.

Abstract: A semiconductor structure includes a silicon substrate, a buffer layer, a nitride-based epitaxial structure layer and multiple discontinuous strain-releasing layers. The buffer layer is disposed on the silicon substrate. The nitride-based epitaxial structure layer is disposed on the buffer layer. The discontinuous strain-releasing layers are disposed between the silicon substrate and the nitride-based epitaxial structure layer, wherein a material of the discontinuous strain-releasing layers is silicon nitride.

Abstract: A semiconductor structure includes a silicon substrate, an aluminum nitride layer and a plurality of grading stress buffer layers. The aluminum nitride layer is disposed on the silicon substrate. The grading stress buffer layers are disposed on the aluminum nitride layer. Each grading stress buffer layer includes a grading layer and a transition layer stacked up sequentially. A chemical formula of the grading layer is Al1?xGaxN, wherein the x value is increased from one side near the silicon substrate to a side away from the silicon substrate, and 0?x?1. A chemical formula of the transition layer is the same as the chemical formula of a side surface of the grading layer away from the silicon substrate. The chemical formula of the transition layer of the grading stress buffer layer furthest from the silicon substrate is GaN.

Abstract: A semiconductor light-emitting device and a manufacturing method thereof are provided, wherein the semiconductor light-emitting device includes a substrate, a first type doped semiconductor layer, a light-emitting layer, a second type doped semiconductor layer and an optical micro-structure layer. The first type doped semiconductor layer is disposed on the substrate and includes a base portion and a mesa portion. The base portion has a top surface, and the mesa portion is disposed on the top surface of the base portion. The light-emitting layer is disposed on the first type doped semiconductor layer. The second type doped semiconductor layer is disposed on the light-emitting layer. The optical micro-structure layer is embedded in the first type doped semiconductor layer.

Abstract: A light-emitting diode (LED) chip includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer and a groove. The first semiconductor layer, active layer and second semiconductor layer are formed on the substrate in sequence. The groove is formed in the first semiconductor layer, the active layer and the second semiconductor layer.

Abstract: A structure of a submount for thermal package has a high heat dissipation and a low spreading thermal resistance. The submount has a specific ratio of height to side length.