Patents by Inventor Sheng-Hsiang Tseng
Sheng-Hsiang Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11982866Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.Type: GrantFiled: December 15, 2022Date of Patent: May 14, 2024Assignee: TDK TAIWAN CORP.Inventors: Chao-Chang Hu, Liang-Ting Ho, Chen-Er Hsu, Yi-Liang Chan, Fu-Lai Tseng, Fu-Yuan Wu, Chen-Chi Kuo, Ying-Jen Wang, Wei-Han Hsia, Yi-Hsin Tseng, Wen-Chang Lin, Chun-Chia Liao, Shou-Jen Liu, Chao-Chun Chang, Yi-Chieh Lin, Shang-Yu Hsu, Yu-Huai Liao, Shih-Wei Hung, Sin-Hong Lin, Kun-Shih Lin, Yu-Cheng Lin, Wen-Yen Huang, Wei-Jhe Shen, Chih-Shiang Wu, Sin-Jhong Song, Che-Hsiang Chiu, Sheng-Chang Lin
-
Patent number: 9702894Abstract: The present invention discloses a monolithic z-axis torsional CMOS MEMS accelerometer, it includes a matching frame, two anchors, a first comb structure, a second comb structure and a proof mass. With the implementation of the present invention, the capacitance sensitivity of Z+ direction and Z? direction sensing signals by the accelerometer can be improved. On the other hand, due to the feasibility of applying micromachining etch processes from the top side, the ease and the yield of production are both promoted.Type: GrantFiled: February 18, 2015Date of Patent: July 11, 2017Assignee: NATIONAL APPLIED RESEARCH LABORATORIESInventors: Sheng-Hsiang Tseng, Yi-Jen Wang, Hann-Huei Tsai, Ying-Zong Juang
-
Publication number: 20160187369Abstract: The present invention discloses a monolithic z-axis torsional CMOS MEMS accelerometer, it includes a curl matching frame, two anchors, a first comb structure, a second comb structure and a proof mass. With the implementation of the present invention, the capacitance sensitivity of Z+ direction and Z? direction sensing signals by the accelerometer can be improved. On the other hand, due to the feasibility of applying micromachining etch processes from the top side, the ease and the yield of production are both promoted.Type: ApplicationFiled: February 18, 2015Publication date: June 30, 2016Inventors: Sheng-Hsiang TSENG, Yi-Jen WANG, Hann-Huei TSAI, Ying-Zong JUANG
-
Patent number: 8451078Abstract: A CMOS-MEMS switch structure is disclosed. The CMOS-MEMS switch structure includes a first substrate, a second substrate, a first cantilever beam, and a second cantilever beam. The first and second substrates are positioned opposite each other. The first cantilever beam is provided on the first substrate, extends from the first substrate toward the second substrate, and bends downward. Likewise, the second cantilever beam is provided on the second substrate, extends from the second substrate toward the first substrate, and bends downward. The first and second substrates are movable toward each other to connect a first top surface of the first cantilever beam and a second top surface of the second cantilever beam, and away from each other so that the first top surface of the first cantilever beam and the second top surface of the second cantilever beam are disconnected, thereby closing or opening the CMOS-MEMS switch structure.Type: GrantFiled: June 15, 2011Date of Patent: May 28, 2013Assignees: National Chip Implementation Center, National Applied Research LaboratoriesInventors: You-Liang Lai, Ying-Zong Juang, Hann-Huei Tsai, Sheng-Hsiang Tseng, Chin-Fong Chiu
-
Patent number: 8410480Abstract: The present invention discloses a CMOS-MEMS cantilever structure. The CMOS-MEMS cantilever structure includes a substrate, a circuit structure, and a cantilever beam. The substrate has a circuit area and a sensor unit area defined thereon. The circuit structure is formed in the circuit area. The cantilever beam is disposed in the sensor unit area with one end floating above the substrate and the other end connecting to the circuit structure. With the above arrangement, the manufacturing process of CMOS-MEMS cantilever structure of this invention can be simplified. Furthermore, the structure of the cantilever beam is thinned down and therefore has a higher sensitivity.Type: GrantFiled: February 19, 2010Date of Patent: April 2, 2013Assignee: National Chip Implementation Center National Applied Research LaboratoriesInventors: Chin-Fong Chiu, Ying Zong Juang, Hann Huei Tsai, Sheng-Hsiang Tseng, Chen-Fu Lin
-
Publication number: 20120279838Abstract: A CMOS-MEMS switch structure is disclosed. The CMOS-MEMS switch structure includes a first substrate, a second substrate, a first cantilever beam, and a second cantilever beam. The first and second substrates are positioned opposite each other. The first cantilever beam is provided on the first substrate, extends from the first substrate toward the second substrate, and bends downward. Likewise, the second cantilever beam is provided on the second substrate, extends from the second substrate toward the first substrate, and bends downward. The first and second substrates are movable toward each other to connect a first top surface of the first cantilever beam and a second top surface of the second cantilever beam, and away from each other so that the first top surface of the first cantilever beam and the second top surface of the second cantilever beam are disconnected, thereby closing or opening the CMOS-MEMS switch structure.Type: ApplicationFiled: June 15, 2011Publication date: November 8, 2012Applicant: National Chip Implementation Center National Applied Research Laboratories.Inventors: You-Liang LAI, Ying-Zong JUANG, Hann-Huei TSAI, Sheng-Hsiang TSENG, Chin-Fong CHIU
-
Publication number: 20110133256Abstract: The present invention discloses a CMOS-MEMS cantilever structure. The CMOS-MEMS cantilever structure includes a substrate, a circuit structure, and a cantilever beam. The substrate has a circuit area and a sensor unit area defined thereon. The circuit structure is formed in the circuit area. The cantilever beam is disposed in the sensor unit area with one end floating above the substrate and the other end connecting to the circuit structure. With the above arrangement, the manufacturing process of CMOS-MEMS cantilever structure of this invention can be simplified. Furthermore, the structure of the cantilever beam is thinned down and therefore has a higher sensitivity.Type: ApplicationFiled: February 19, 2010Publication date: June 9, 2011Applicant: National Chip Implementation Center National Applied Research LaboratoriesInventors: Chin-Fong Chiu, Ying Zong Juang, Hann Huei Tsai, Sheng-Hsiang Tseng, Chen-Fu Lin
-
Publication number: 20110117747Abstract: A method of fabricating a single chip for integrating a field-effect transistor into a microelectromechanical systems (MEMS) structure is provided. The method includes the steps of: providing a substrate having thereon at least one transistor structure, a MEMS structure and a blocking structure, wherein the blocking structure encircles the MEMS structure to separate the MEMS structure from the transistor structure; forming a masking layer for covering the transistor structure, the MEMS structure and the blocking structure; forming a patterned photoresist layer on the masking layer; performing a first etching process by using the patterned photoresist layer to remove the masking layer on the MEMS structure; and performing a second etching process by removing a portion of the MEMS structure to form a plurality of microstructures such that a relative motion among the microstructures takes place in a direction perpendicular to the substrate.Type: ApplicationFiled: January 5, 2010Publication date: May 19, 2011Applicant: National Chip Implementation Center National Applied Research LaboratoriesInventors: Chin-Long Wey, Chin-Fong Chiu, Ying-Zong Juang, Hann-Huei Tsai, Sheng-Hsiang Tseng, Hsin-Hao Liao
-
Patent number: 7435663Abstract: Simple but practical methods to dice a CMOS-MEMS multi-project wafer are proposed. On this wafer, micromachined microstructures have been fabricated and released. In a method, a photoresist is spun on the full wafer surface, and this photoresist is thick enough to cover all cavities and structures on the wafer, such that the photoresist will protect the released structures free from the chipping, vibrations, and damages in the diamond blade dicing process. In another method, a laser dicing system is utilized to scribe the multi-project wafer placed on a platform, and by precisely controlling the platform moving-track, the dicing path can be programmed to any required shape and region, even it is not straight. In addition, the wafer backside is mounted on a blue-tape at the beginning to enhance the process reliability.Type: GrantFiled: November 10, 2005Date of Patent: October 14, 2008Assignee: National Applied Research Laboratories National Chip International CenterInventors: Sheng-Hsiang Tseng, Fu-Yuan Xiao, Ying-Zong Juang, Chin-Fong Chiu
-
Publication number: 20060105545Abstract: Simple but practical methods to dice a CMOS-MEMS multi-project wafer are proposed. On this wafer, micromachined microstructures have been fabricated and released. In a method, a photoresist is spun on the full wafer surface, and this photoresist is thick enough to cover all cavities and structures on the wafer, such that the photoresist will protect the released structures free from the chipping, vibrations, and damages in the diamond blade dicing process. In another method, a laser dicing system is utilized to scribe the multi-project wafer placed on a platform, and by precisely controlling the platform moving-track, the dicing path can be programmed to any required shape and region, even it is not straight. In addition, the wafer backside is mounted on a blue-tape at the beginning to enhance the process reliability.Type: ApplicationFiled: November 10, 2005Publication date: May 18, 2006Inventors: Sheng-Hsiang Tseng, Fu-Yuan Xiao, Ying-Zong Juang, Chin-Fong Chiu