Patents by Inventor Sheng-Hua NI

Sheng-Hua NI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Crystalline silicon ingot and method of fabricating the same
    Patent number: 10138572
    Abstract: A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.
    Type: Grant
    Filed: March 15, 2016
    Date of Patent: November 27, 2018
    Assignee: Sino-American Silicon Products Inc.
    Inventors: Sung-Lin Hsu, Cheng-Jui Yang, Pei-Kai Huang, Sheng-Hua Ni, Yu-Min Yang, Ming-Kung Hsiao, Wen-Huai Yu, Ching-Shan Lin, Wen-Ching Hsu, Chung-Wen Lan
  • CRYSTALLINE SILICON INGOT AND METHOD OF FABRICATING THE SAME
    Publication number: 20160194782
    Abstract: A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.
    Type: Application
    Filed: March 15, 2016
    Publication date: July 7, 2016
    Applicant: Sino-American Silicon Products Inc.
    Inventors: Sung-Lin Hsu, Cheng-Jui Yang, Pei-Kai Huang, Sheng-Hua Ni, Yu-Min Yang, Ming-Kung Hsiao, Wen-Huai Yu, Ching-Shan Lin, Wen-Ching Hsu, Chung-Wen Lan
  • Crystalline silicon ingot and method of fabricating the same
    Patent number: 9315918
    Abstract: A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.
    Type: Grant
    Filed: March 9, 2012
    Date of Patent: April 19, 2016
    Assignee: Sino-American Silicon Products Inc.
    Inventors: Sung-Lin Hsu, Cheng-Jui Yang, Pei-Kai Huang, Sheng-Hua Ni, Yu-Min Yang, Ming-Kung Hsiao, Wen-Huai Yu, Ching-Shan Lin, Wen-Ching Hsu, Chung-Wen Lan
  • CRYSTALLINE SILICON INGOT AND METHOD OF FABRICATING THE SAME
    Publication number: 20130095027
    Abstract: A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.
    Type: Application
    Filed: March 9, 2012
    Publication date: April 18, 2013
    Applicant: SINO-AMERICAN SILICON PRODUCTS INC.
    Inventors: Sung-Lin HSU, Cheng-Jui YANG, Pei-Kai HUANG, Sheng-Hua NI, Yu-Min YANG, Ming-Kung HSIAO, Wen-Huai YU, Ching-Shan LIN, Wen-Ching HSU, Chung-Wen LAN