Abstract: The display system comprising a main control module and a display module is provided. The main control module comprises a display driving circuit and a timing control circuit. The display driving circuit is used to output a display driving signal. The timing control circuit is coupled to the display driving circuit to receive the display driving signal, and convert the display driving signal into a digital signal. The display module comprises a first display panel to an N-th display panel, coupled to the timing control circuit and receiving the digital signal, so as to display corresponding multimedia content according to the digital signal, wherein N is a positive integer greater than 1, and the main control module is independently coupled to the display module.

Abstract: The present disclosure discloses an image processing apparatus having lens color-shading correction mechanism. A first and a second calibration circuits perform lens color-shading correction on an input image according to a first and a second calibration parameters to generate a first and a second calibrated images. A first and a second statistic circuits perform statistic on the first and the second calibrated images to generate a first and a second statistic results.

Abstract: A method of adjusting an energy output for an electric nail gun including a controller, a motor, a flywheel that co-rotates with the motor, an impact member configured to receive energy of the flywheel to hit a nail, an operation component, an adjust component and a plurality of indicators is provided. The controller has a plurality of energy modes related to controlling the motor to drive the flywheel to rotate with different rotational speeds, respectively. When the adjust component is activated, the controller switches a currently-active energy mode to a next one of the energy modes, and lights up the indicators in a manner corresponding to the next one of the energy modes. When the operation component is activated, the controller controls the motor to rotate in the currently-active energy mode to drive the flywheel thus driving the impact member for firing the nail.

Abstract: A memory device and a programming method thereof are provided. The memory device includes a memory array, a plurality of word lines and a voltage generator. During a programming procedure, one of the word lines is at a selected state and others of the word lines are at a deselected state. Some of the word lines, which are at the deselected state, are classified into a first group and a second group. The first group and the second group are respectively located at two sides of the word line, which is at the selected state. The voltage generator provides a programming voltage to the word line, which is at the select state, during a programming duration. The voltage generator provides a first two-stage voltage waveform to the word lines in the first group and provides a second two-stage voltage waveform to the word lines in the second group.

Abstract: An encoding method is provided. The encoding method comprises: encoding a first portion of target data to generate a first two dimensional code; encoding a second portion of the target data by the encoding unit generate a second two dimensional code; generating a three dimensional model according to the first two dimensional code, wherein the three dimensional model includes a plurality of three dimensional modules, the three dimensional modules are arranged along a first direction and a second direction, and a height in a third direction of the three dimensional modules is determined according to the first codes; coloring the three dimensional modules according to the second two dimensional code, respectively, to generate a colored three dimensional model, wherein a color of the three dimensional modules of the colored three dimensional model is determined according to the second codes.

Abstract: An integrated circuit design protecting device includes a switch device and a non-volatile memory. The switch device includes M input ports, N output ports, N multiplexers, and S selection nodes. Each multiplexer of the N multiplexers includes I input nodes, an output node, and at least one selection node. The I input nodes are coupled to I input ports of the M input ports. The output node is coupled to an output port of the N output ports. The non-volatile memory is coupled to the S selection nodes of the switch device for providing selection codes to the switch device.

Abstract: An integrated circuit design protecting device includes a switch device and a non-volatile memory. The switch device includes M input ports, N output ports, N multiplexers, and S selection nodes. Each multiplexer of the N multiplexers includes I input nodes, an output node, and at least one selection node. The I input nodes are coupled to I input ports of the M input ports. The output node is coupled to an output port of the N output ports. The non-volatile memory is coupled to the S selection nodes of the switch device for providing selection codes to the switch device.

Abstract: A manufacturing method of a thin film transistor is provided. An insulating pattern layer having at least one protrusion is formed on a substrate. At least one spacer and a plurality of amorphous semiconductor patterns separated from each other are formed on the insulating pattern layer. The spacer is formed at one side of the protrusion and connected between the amorphous semiconductor patterns. The spacer and the amorphous semiconductor patterns are crystallized. The protrusion and the insulating pattern layer below the spacer are removed so that a beam structure having a plurality of corners is formed and suspended over the substrate. A carrier tunneling layer, a carrier trapping layer and a carrier blocking layer are sequentially formed to compliantly wrap the corners of the beam structure. Hereafter, a gate is formed on the substrate to cover the beam structure and wrap the carrier blocking layer.

Abstract: A manufacturing method of a thin film transistor is provided. An insulating pattern layer having at least one protrusion is formed on a substrate. At least one spacer and a plurality of amorphous semiconductor patterns separated from each other are formed on the insulating pattern layer. The spacer is formed at one side of the protrusion and connected between the amorphous semiconductor patterns. The spacer and the amorphous semiconductor patterns are crystallized. The protrusion and the insulating pattern layer below the spacer are removed so that a beam structure having a plurality of corners is formed and suspended over the substrate. A carrier tunneling layer, a carrier trapping layer and a carrier blocking layer are sequentially formed to compliantly wrap the corners of the beam structure. Hereafter, a gate is formed on the substrate to cover the beam structure and wrap the carrier blocking layer.

Abstract: A thin film transistor and a manufacturing method thereof are provided. An insulating pattern layer having at least one protrusion is formed on a substrate. Afterwards, at least one spacer and a plurality of amorphous semiconductor patterns separated from each other are formed on the insulating pattern layer. The spacer is formed at one side of the protrusion and connected between the amorphous semiconductor patterns. Later, the spacer and the amorphous semiconductor patterns are crystallized. Subsequently, the protrusion and the insulating pattern layer below the spacer are removed so that a beam structure having a plurality of corners is formed and suspended over the substrate. Then, a carrier tunneling layer, a carrier trapping layer and a carrier blocking layer are sequentially formed to compliantly wrap the corners of the beam structure. Hereafter, a gate is formed on the substrate to cover the beam structure and wrap the carrier blocking layer.

Abstract: A thin film transistor and a manufacturing method thereof are provided. An insulating pattern layer having at least one protrusion is formed on a substrate. Afterwards, at least one spacer and a plurality of amorphous semiconductor patterns separated from each other are formed on the insulating pattern layer. The spacer is formed at one side of the protrusion and connected between the amorphous semiconductor patterns. Later, the spacer and the amorphous semiconductor patterns are crystallized. Subsequently, the protrusion and the insulating pattern layer below the spacer are removed so that a beam structure having a plurality of corners is formed and suspended over the substrate. Then, a carrier tunneling layer, a carrier trapping layer and a carrier blocking layer are sequentially formed to compliantly wrap the corners of the beam structure. Hereafter, a gate is formed on the substrate to cover the beam structure and wrap the carrier blocking layer.

Abstract: A clock tuning device and method for executing overclocking operations on plural elements disposed on a motherboard. The clock tuning device includes a phase-locked loop for outputting a plurality of clock signals to the elements, and a control circuit for controlling the phase-locked loop to adjust the frequencies of the clock signals, so as to execute the overclocking operations on the elements, respectively. The method includes the steps of: increasing the frequency of a first clock signal until one of the elements can't work normally due to an utmost frequency of the first clock signal; resetting all the elements and operating the element corresponding to the first signal according to a safe frequency of the first clock signal; and repeating the above steps to perform overclocking operation on each of the other elements.

Abstract: A device and a method for setting an initial value of a control chip. The device includes a setting unit, which is disposed outside the control chip and provides a setting signal, and a decoder, which is disposed inside the control chip, receives the setting signal, and generates a selecting signal according to the setting signal. The control chip obtains the initial value according to the selecting signal.

Abstract: A device and a method for setting an initial value of a control chip. The device includes a setting unit, which is disposed outside the control chip and provides a setting signal, and a decoder, which is disposed inside the control chip, receives the setting signal, and generates a selecting signal according to the setting signal. The control chip obtains the initial value according to the selecting signal.

Abstract: A clock tuning device and method for executing overclocking operations on plural elements disposed on a motherboard. The clock tuning device includes a phase-locked loop for outputting a plurality of clock signals to the elements, and a control circuit for controlling the phase-locked loop to adjust the frequencies of the clock signals, so as to execute the overclocking operations on the elements, respectively. The method includes the steps of: increasing the frequency of a first clock signal until one of the elements can't work normally due to an utmost frequency of the first clock signal; resetting all the elements and operating the element corresponding to the first signal according to a safe frequency of the first clock signal; and repeating the above steps to perform overclocking operation on each of the other elements.

Abstract: The apparatus for inhibiting the ring back effect of a circuit comprises a first differential current mode pair and a second differential current mode pair. The first differential current mode pair outputs a first current and a second current through the controlling of a first control signal. The second differential current mode pair outputs a third current and a fourth current through the controlling of a second control signal. The second control signal is the delayed first control signal. The first current and the third current are combined to be the first output current signal, while the second current and the fourth current are combined to be the second output current signal. The magnitude and time delay of the third and fourth currents are designed to compensate the first and second currents respectively so as to inhibit the ring back effect.