Patents by Inventor Sheng-Kai Yeh

Sheng-Kai Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240050987
    Abstract: A semiconductor device and a method are provided. The semiconductor device includes a first semiconductor component, a bonding layer and a second semiconductor component. The first semiconductor component includes a first transistor formed on a substrate and a second transistor formed on the substrate and separated from the first transistor. The bonding layer is provided on the first semiconductor component. The second semiconductor component is provided on the bonding layer and includes an acoustic transducer. The acoustic transducer is controlled by the first transistor and the second transistor to execute a photoacoustic sensing. The acoustic transducer comprises a space gap and a least a portion of the space gap is surrounded by the bonding layer.
    Type: Application
    Filed: August 11, 2022
    Publication date: February 15, 2024
    Inventors: MING-HSIEN YANG, CHUN-HAO CHOU, KUO-CHENG LEE, SHENG KAI YEH
  • Patent number: 11881347
    Abstract: The present invention provides a micro tactility-simulating sensing device, including: a chip including a first top surface and a first inductor, wherein the first top surface has wiring through holes configured to allow an external circuit to connect to the first inductor, and the first top surface is a flat surface except the wiring through holes; a magnetic rigid body coupled with the first inductor to allow the first inductor to sense a magnetic flux passing therethrough, and configured to receive a tactile load; and a polymer configured between the chip and the magnetic rigid body to have a characteristic distance therebetween, wherein the characteristic distance and the magnetic flux have a functional relationship. The micro tactility-simulating sensing device of the present invention can effectively increase the magnitude of the measured signal and provide two different ways to read the signal.
    Type: Grant
    Filed: December 2, 2019
    Date of Patent: January 23, 2024
    Assignee: National Tsing Hua University
    Inventors: Sheng-Kai Yeh, Jiunn-Horng Lee, Weileun Fang
  • Publication number: 20230386948
    Abstract: A semiconductor device and method of forming such a device includes a MEMS component including one or more MEMS pixels and having a MEMS membrane substrate and a MEMS sidewall. The semiconductor device includes an analog circuit component bonded to the MEMS component, and which includes at least one analog CMOS component within an analog circuit insulative layer, and an analog circuit component substrate. The semiconductor device includes an HPC component bonded to the analog circuit component substrate. The HPC component includes at least one HPC metal component disposed within an HPC insulative layer, at least one bond pad, at least one bond pad via connecting the at least one bond pad and the at least one HPC metal component, and an HPC substrate. Additionally, the semiconductor device includes a DTC component bonded to the HPC substrate, and which includes a DTC die disposed in a DTC substrate.
    Type: Application
    Filed: May 25, 2022
    Publication date: November 30, 2023
    Inventors: You-Ru Lin, Sheng Kai Yeh, Jen-Yuan Chang, Chi-Yuan Shih, Chia-Ming Hung, Hsiang-Fu Chen, Shih-Fen Huang
  • Publication number: 20230320227
    Abstract: A method for manufacturing a semiconductor structure is provided. The method may include several operations. A piezoelectric capacitor is formed over a substrate, wherein the piezoelectric capacitor includes a metal electrode. An intermediate layer is formed on the metal electrode, and is patterned using a first mask layer as a mask. A metal layer is formed on the intermediate layer, wherein the metal layer electrically connects to the metal electrode. The metal layer is patterned using a second mask layer, wherein the intermediate layer is within a coverage area of the metal layer from a top-view perspective after the patterning of the metal layer. A semiconductor structure thereof is also provided.
    Type: Application
    Filed: March 29, 2022
    Publication date: October 5, 2023
    Inventors: CHING-HUI LIN, FU-CHUN HUANG, CHUN-REN CHENG, WEI CHUN WANG, CHAO-HUNG CHU, YI-HSIEN CHANG, PO-CHEN YEH, CHI-YUAN SHIH, SHIH-FEN HUANG, YAN-JIE LIAO, SHENG KAI YEH
  • Publication number: 20210074469
    Abstract: The present invention provides a micro tactility-simulating sensing device, including: a chip including a first top surface and a first inductor, wherein the first top surface has wiring through holes configured to allow an external circuit to connect to the first inductor, and the first top surface is a flat surface except the wiring through holes; a magnetic rigid body coupled with the first inductor to allow the first inductor to sense a magnetic flux passing therethrough, and configured to receive a tactile load; and a polymer configured between the chip and the magnetic rigid body to have a characteristic distance therebetween, wherein the characteristic distance and the magnetic flux have a functional relationship. The micro tactility-simulating sensing device of the present invention can effectively increase the magnitude of the measured signal and provide two different ways to read the signal.
    Type: Application
    Filed: December 2, 2019
    Publication date: March 11, 2021
    Inventors: Sheng-Kai Yeh, Jiunn-Horng Lee, Weileun Fang