Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a memory device surrounded by a dielectric structure disposed over a substrate. The memory device includes a data storage structure disposed between a bottom electrode and a top electrode. A bottom electrode via couples the bottom electrode to a lower interconnect. A top electrode via couples the top electrode to an upper interconnect. A bottommost surface of the top electrode via is directly over the top electrode and has a first width that is smaller than a second width of a bottommost surface of the bottom electrode via.

Abstract: A memory device includes a memory array, a bit line driving circuit, a word line driving circuit, a read/write circuit, a controller, and a reference driving circuit. The memory array includes several memory units. The bit line driving circuit is configured to interpret a memory bit address and to drive a bit line. The word line driving circuit is configured to interpret a memory word address and to drive a word line. The read/write circuit is configured to read, set, or reset the memory units. The controller is configured to switch the memory array to work in a single memory unit mode or a dual memory unit mode. The reference driving circuit is configured to drive a reference line, wherein the reference line comprises several reference units, and the reference line and the reference units are located in the memory array.

Abstract: A memory device includes a memory array, a bit line driving circuit, a word line driving circuit, a read/write circuit, a controller, and a reference driving circuit. The memory array includes several memory units. The bit line driving circuit is configured to interpret a memory bit address and to drive a bit line. The word line driving circuit is configured to interpret a memory word address and to drive a word line. The read/write circuit is configured to read, set, or reset the memory units. The controller is configured to switch the memory array to work in a single memory unit mode or a dual memory unit mode. The reference driving circuit is configured to drive a reference line, wherein the reference line comprises several reference units, and the reference line and the reference units are located in the memory array.

Abstract: A memory driving circuit is disclosed herein. The memory driving circuit includes a programmable current source, a reference voltage generation unit and a voltage comparator unit, The programmable current source generates a second current according to a first current. The second current flows into a memory cell, and produces a device voltage at the input of the memory cell. The reference voltage generation unit generates a crystal voltage. The voltage comparator unit compares the device voltage with the crystal voltage and sends out a control signal to control the programmable current source. The first current and the second current are adjusted by the control signal so that the shape of the current pulse of SET operation to the memory cell is well controlled.

Abstract: A memory driving circuit is disclosed herein. The memory driving circuit includes a programmable current source, a reference voltage generation unit and a voltage comparator unit, The programmable current source generates a second current according to a first current. The second current flows into a memory cell, and produces a device voltage at the input of the memory cell. The reference voltage generation unit generates a crystal voltage. The voltage comparator unit compares the device voltage with the crystal voltage and sends out a control signal to control the programmable current source. The first current and the second current are adjusted by the control signal so that the shape of the current pulse of SET operation to the memory cell is well controlled.

Abstract: A non-volatile memory cell and a non-volatile memory device are provided. The non-volatile memory cell includes a latch structure, a first read/write circuit, a first memristor, a second read/write circuit and a second memristor. The first read/write circuit controls a writing operation of the first memristor. The second read/write circuit controls a writing operation of the second memristor. When a restore operation is performed, the data in the latch structure is restored by using the resistance difference between the first memristor and the second memristor. The non-volatile device of the invention combines the advantages of fast memory unit and non-volatile memory, and it may work at a high speed and retain data when powered off.

Abstract: A non-volatile memory device includes plural non-memory cells. Each non-volatile memory cell includes a first switch, a first memristor, a second switch, a second memristor and a third switch. The control terminal of the first switch is coupled to a word line. The first memristor is provided with a first impedance. The control terminal of the second switch is coupled to the word line. The second memristor is provided with a second impedance. The first switch, the first memristor, the second switch and the second memristor are serially connected between a bit line and an inverted bit line in an alternate manner. The third switch is used for configuring the first impedance and the second impedance. The non-volatile memory device provided by the disclosure has a characteristic of quick access and the data stored therein does not require a dynamic update.

Abstract: A non-volatile memory cell and a non-volatile memory device are provided. The non-volatile memory cell includes a latch structure, a first read/write circuit, a first memristor, a second read/write circuit and a second memristor. The first read/write circuit controls a writing operation of the first memristor. The second read/write circuit controls a writing operation of the second memristor. When a restore operation is performed, the data in the latch structure is restored by using the resistance difference between the first memristor and the second memristor. The non-volatile device of the invention combines the advantages of fast memory unit and non-volatile memory, and it may work at a high speed and retain data when powered off.

Abstract: A receiver circuit including an external terminal, a level shifter, a reset circuit, and an inverting circuit is provided. The external terminal receives the external signal. The level shifter shifts a voltage swing range of the external signal to generate a level shifting signal. The level shifter includes a pull-up unit and a pull-down unit coupled in series. The pull-up unit and the pull-down unit are alternatively switched respectively according to the external signal and the internal signal, and thus a leakage path of the level shifter is cut off for different states of the external signal. The reset circuit couples the external terminal and the level shifter and provides a reset path according to the external signal for assisting the switching of the pull-up unit and the pull-down unit. The inverting circuit couples the level shifter and inverts the level shifting signal to generate the internal signal.

Abstract: A memory driving circuit includes a current source configured to output a second current, a first switching unit configured to undergo switching to connect to the current source selectively to output the second current, a voltage generating unit configured to provide a reference voltage, a capacitive energy storage unit configured to store energy according to the reference voltage, a third switching unit configured to undergo switching to connect the voltage generating unit and the capacitive energy storage unit selectively, a second switching unit configured to undergo switching to connect the capacitive energy storage unit selectively to output a third current, and a current output terminal configured to output the second current, the third current, or the sum of the second current and the third current.

Abstract: A memory device includes a memory array, a word line driver, and source drivers. The memory array includes memory units. The memory units arranged in the same column are coupled to corresponding bit line. The memory units arranged in the same row are coupled to corresponding word line. The memory units arranged in the rows are divided into N groups, in which N is an integer greater than or equal to 2. The word line driver is configured to selectively enable the word lines. Source drivers are coupled to the memory units in the groups respectively and configured to output N source control signals. When any word line in a first group is enabled, the source control signals corresponding to the first group and a second group of which the sequence for read-write operation is next to the first group are controlled at a select level by corresponding source drivers.

Abstract: A non-volatile storage device adopt memristors to store data and uses fewer transistors to realize the same circuit function, whereby to decrease the chip area and reduce the time and energy spent in initiating the device. Further, the non-volatile storage device disposes appropriate electronic elements in the spacing between adjacent memristors to meet the layout design rule and achieve high space efficiency in the chip lest the space between memristors be wasted.

Abstract: A differential circuit system is provided. The differential circuit system includes: a different circuit set including a plurality of differential circuits, a voltage regulator, and a current drainage circuit set. The differential circuits are electrically connected between a first node and a second node, and each differential circuit generates a current flowing from the first node to the second node. A high voltage is provided to the first node and a low voltage is provided to the second node. The first node receives an external voltage. According to the first voltage, the voltage regulator generates the low voltage. The low voltage is provided to the second node. The current drainage circuit set generates a drainage current in between the second node and a ground voltage. A superposed current flowing to the voltage regulator is difference of the summation of currents minus the conducting current.

Abstract: A signal transmission circuit is provided. The signal transmission circuit includes a first driving circuit including a first differential output pair, a plurality of input/output units and a calibration module. The first differential output pair includes a positive and a negative ends. The plurality of input/output units receive a positive and a negative control signals and generate a first superimposed current at the first differential output pair. The calibration module transmits a calibration signal to the first driving circuit. The calibration module sets operation of each of the input/output unit in the first driving circuit, and generates the first superimposed current flowing to a first external resistor according to the positive and the negative control signals.

Abstract: A differential circuit system is provided. The differential circuit system includes: a different circuit set including a plurality of differential circuits, a voltage regulator, and a current drainage circuit set. The differential circuits are electrically connected between a first node and a second node, and each differential circuit generates a current flowing from the first node to the second node. A high voltage is provided to the first node and a low voltage is provided to the second node. The first node receives an external voltage. According to the first voltage, the voltage regulator generates the low voltage. The low voltage is provided to the second node. The current drainage circuit set generates a drainage current in between the second node and a ground voltage. A superposed current flowing to the voltage regulator is difference of the summation of currents minus the conducting current.

Abstract: A receiver circuit is provided which receives an external signal of high voltage and provides a corresponding internal signal of low voltage. The receiver circuit includes a voltage limiter, a level down shifter and an inverter of low operation voltage. The level down shifter has a front node and a back node, and includes a transistor with a gate and a source respectively coupled to the voltage limiter and the inverter at the front node and the back node. The voltage limiter limits level of the external signal transmitted to the front node, the level down shifter shifts down a signal of the front node by a cross voltage to generate a signal of the back node, and the inverter inverts the signal of the back node to generate the internal signal.

Abstract: A method for identifying multiple touch objects has steps of reading at least one touched cluster to be identified in a sensing frame, determining a range of each one of the at least one touched cluster to be identified, comparing the range of each touched cluster to be identified with a first preset division range, if the range of the touched cluster to be identified exceeds the first preset division range, reducing a sensing value of each one of at least one middle sensing point within the first touched cluster to be divided, determining a count of center sensing points of each first touched cluster to be divided, and dividing the first touched cluster to be divided containing multiple center sensing points. Accordingly, the present invention correctly identifies multiple touch objects from a single touched cluster arising from an excessively large line-to-line space.

Abstract: ESD protection circuit is provided, which includes a detection circuit, a trigger circuit and a clamp circuit. The detection circuit includes two stacked capacitors reflecting occurrence of ESD events. The trigger circuit includes three stacked transistors controlling triggering of the clamp circuit according to operation of the detection circuit. The clamp circuit includes two stacked transistors conducting ESD path when triggered.

Abstract: A method for identifying multiple touch objects has steps of reading at least one touched cluster to be identified in a sensing frame, determining a range of each one of the at least one touched cluster to be identified, comparing the range of each touched cluster to be identified with a first preset division range, if the range of the touched cluster to be identified exceeds the first preset division range, reducing a sensing value of each one of at least one middle sensing point within the first touched cluster to be divided, determining a count of center sensing points of each first touched cluster to be divided, and dividing the first touched cluster to be divided containing multiple center sensing points. Accordingly, the present invention correctly identifies multiple touch objects from a single touched cluster arising from an excessively large line-to-line space.

Abstract: A receiver circuit is provided which receives an external signal of high voltage and provides a corresponding internal signal of low voltage. The receiver circuit includes a voltage limiter, a level down shifter and an inverter of low operation voltage. The level down shifter has a front node and a back node, and includes a transistor with a gate and a source respectively coupled to the voltage limiter and the inverter at the front node and the back node. The voltage limiter limits level of the external signal transmitted to the front node, the level down shifter shifts down a signal of the front node by a cross voltage to generate a signal of the back node, and the inverter inverts the signal of the back node to generate the internal signal.