Abstract: A magnetoresistive random access memory (MRAM) includes a first transistor and a second transistor on a substrate, a source line coupled to a first source/drain region of the first transistor, and a first metal interconnection coupled to a second source/drain region of the first transistor. Preferably, the first metal interconnection is extended to overlap the first transistor and the second transistor and the first metal interconnection further includes a first end coupled to the second source/drain region of the first transistor and a second end coupled to a magnetic tunneling junction (MTJ).

Abstract: The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.

Abstract: The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.

Abstract: Provided are a gate structure and a method of forming the same. The gate structure includes a gate dielectric layer, a metal layer, and a cluster layer. The metal layer is disposed over the gate dielectric layer. The cluster layer is sandwiched between the metal layer and the gate dielectric layer, wherein the cluster layer at least includes an amorphous silicon layer, an amorphous carbon layer, or an amorphous germanium layer. In addition, a semiconductor device including the gate structure is provided.

Abstract: A semiconductor device includes a first passivation layer over a substrate. The semiconductor device further includes a post passivation interconnect (PPI) line over the first passivation layer, wherein a top-most portion of the PPI line has a first portion having a convex shape and a second portion having a concave shape. The semiconductor device further includes a second passivation layer configured to cause stress to the PPI line. The semiconductor device further includes a polymer material over the second passivation layer.

Abstract: Provided are a gate structure and a method of forming the same. The gate structure includes a gate dielectric layer, a metal layer, and a cluster layer. The metal layer is disposed over the gate dielectric layer. The cluster layer is sandwiched between the metal layer and the gate dielectric layer, wherein the cluster layer at least includes an amorphous silicon layer, an amorphous carbon layer, or an amorphous germanium layer. In addition, a semiconductor device including the gate structure is provided.

Abstract: A semiconductor device includes a first passivation layer over a substrate. The semiconductor device further includes at least two post passivation interconnect (PPI) lines over the first passivation layer, wherein a top portion of each of the at least two PPI lines has a rounded shape. The semiconductor device further includes a second passivation layer configured to stress the at least two PPI lines. The semiconductor device further includes a polymer material over the second passivation layer and filling a trench between adjacent PPI lines of the at least two PPI lines.

Abstract: The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.

Abstract: The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.

Abstract: Provided are a gate structure and a method of forming the same. The gate structure includes a gate dielectric layer, a metal layer, and a cluster layer. The metal layer is disposed over the gate dielectric layer. The cluster layer is sandwiched between the metal layer and the gate dielectric layer, wherein the cluster layer at least includes an amorphous silicon layer, an amorphous carbon layer, or an amorphous germanium layer. In addition, a semiconductor device including the gate structure is provided.

Abstract: The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.

Abstract: A semiconductor device includes a first passivation layer over a substrate. The semiconductor device further includes at least two post passivation interconnect (PPI) lines over the first passivation layer, wherein a top portion of each of the at least two PPI lines has a rounded shape. The semiconductor device further includes a second passivation layer configured to stress the at least two PPI lines. The semiconductor device further includes a polymer material over the second passivation layer and filling a trench between adjacent PPI lines of the at least two PPI lines.

Abstract: The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.

Abstract: A method of manufacturing a semiconductor device includes depositing a first passivation layer over a substrate, depositing a conductive material over the first passivation layer, patterning the conductive material to form a redistribution layer (RDL) structure, and depositing a second passivation layer configured to change a shape of a top portion of the RDL structure.

Abstract: The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.

Abstract: The present disclosure describes an bonding pad formation method that incorporates an tantalum (Ta) conductive layer to block mobile ionic charges generated during the aluminum-copper (AlCu) metal fill deposition. For example, the method includes forming one or more interconnect layers over a substrate and forming a dielectric over a top interconnect layer of the one or more interconnect layers. A first recess is formed in the dielectric to expose a line or a via from the top interconnect layer. A conductive layer is formed in the first recess to form a second recess that is smaller than the first recess. A barrier metal layer is formed in the second recess to form a third recess that is smaller than the second recess. A metal is formed to fill the third recess.

Abstract: The present disclosure describes an bonding pad formation method that incorporates an tantalum (Ta) conductive layer to block mobile ionic charges generated during the aluminum-copper (AlCu) metal fill deposition. For example, the method includes forming one or more interconnect layers over a substrate and forming a dielectric over a top interconnect layer of the one or more interconnect layers. A first recess is formed in the dielectric to expose a line or a via from the top interconnect layer. A conductive layer is formed in the first recess to form a second recess that is smaller than the first recess. A barrier metal layer is formed in the second recess to form a third recess that is smaller than the second recess. A metal is formed to fill the third recess.

Abstract: The present disclosure provides a method for controlling a semiconductor deposition operation. The method includes (i) identifying a first target lifetime in a physical vapor deposition (PVD) system; (ii) inputting the first target lifetime into a processor; (iii) outputting, by the processor, a plurality of first operation parameters according to a plurality of compensation curves; and (iv) performing the first operation parameters in the PVD system. The first operation parameters includes, but not limited to, an RF power tuning, a DC voltage tuning, a target to chamber pedestal spacing tuning, an AC bias tuning, an impedance tuning, a reactive gas flow tuning, an inert gas flow tuning, a chamber pedestal temperature tuning, or a combination thereof.

Abstract: A manufacturing method of a structure of a thin fan includes providing a plastic material containing a plurality of metal particles and forming a housing from the plastic material. A part surface of the housing is removed, and a layout area and an extended circuit are formed on the housing. One terminal of the extended circuit connects to the layout area. A first signal connecting structure is disposed on the housing. The first signal connecting structure connects to the other terminal of the extended circuit. A metal layer is disposed on the layout area and the extended circuit.

Abstract: A method of manufacturing a semiconductor device includes depositing a first passivation layer over a substrate, depositing a conductive material over the first passivation layer, patterning the conductive material to form a redistribution layer (RDL) structure, and depositing a second passivation layer configured to change a shape of a top portion of the RDL structure.