Patents by Inventor Sheng-Wen Jiang

Sheng-Wen Jiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11955335
    Abstract: In a method of coating a photo resist over a wafer, dispensing the photo resist from a nozzle over the wafer is started while rotating the wafer, and dispensing the photo resist is stopped while rotating the wafer. After starting and before stopping the dispensing the photo resist, a wafer rotation speed is changed at least 4 times. During dispensing, an arm holding the nozzle may move horizontally. A tip end of the nozzle may be located at a height of 2.5 mm to 3.5 mm from the wafer.
    Type: Grant
    Filed: August 8, 2022
    Date of Patent: April 9, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tung-Hung Feng, Hui-Chun Lee, Sheng-Wen Jiang, Shih-Che Wang
  • Publication number: 20230108126
    Abstract: A method for manufacturing a semiconductor device includes forming a forming a photoresist layer over a semiconductor substrate and selectively exposing the photoresist layer to actinic radiation. After selectively exposing the photoresist layer to actinic radiation, storing the semiconductor substrate in a semiconductor substrate container under an ambient of extreme dry clean air or inert gas. The method also includes after the storing the semiconductor substrate, performing a first heating of the photoresist layer.
    Type: Application
    Filed: August 8, 2022
    Publication date: April 6, 2023
    Inventors: Chun-Wei LIAO, Sheng-Wen JIANG, Jan-Liang YANG, Hui-Chun LEE
  • Patent number: 11545361
    Abstract: In a method of coating a photo resist over a wafer, dispensing the photo resist from a nozzle over the wafer is started while rotating the wafer, and dispensing the photo resist is stopped while rotating the wafer. After starting and before stopping the dispensing the photo resist, a wafer rotation speed is changed at least 4 times. During dispensing, an arm holding the nozzle may move horizontally. A tip end of the nozzle may be located at a height of 2.5 mm to 3.5 mm from the wafer.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: January 3, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tung-Hung Feng, Hui-Chun Lee, Sheng-Wen Jiang, Shih-Che Wang
  • Publication number: 20220382158
    Abstract: In a method of coating a photo resist over a wafer, dispensing the photo resist from a nozzle over the wafer is started while rotating the wafer, and dispensing the photo resist is stopped while rotating the wafer. After starting and before stopping the dispensing the photo resist, a wafer rotation speed is changed at least 4 times. During dispensing, an arm holding the nozzle may move horizontally. A tip end of the nozzle may be located at a height of 2.5 mm to 3.5 mm from the wafer.
    Type: Application
    Filed: August 8, 2022
    Publication date: December 1, 2022
    Inventors: Tung-Hung FENG, Hui-Chun LEE, Sheng-Wen JIANG, Shih-Che WANG
  • Publication number: 20210343521
    Abstract: In a method of coating a photo resist over a wafer, dispensing the photo resist from a nozzle over the wafer is started while rotating the wafer, and dispensing the photo resist is stopped while rotating the wafer. After starting and before stopping the dispensing the photo resist, a wafer rotation speed is changed at least 4 times. During dispensing, an arm holding the nozzle may move horizontally. A tip end of the nozzle may be located at a height of 2.5 mm to 3.5 mm from the wafer.
    Type: Application
    Filed: September 30, 2020
    Publication date: November 4, 2021
    Inventors: Tung-Hung FENG, Hui-Chun LEE, Sheng-Wen JIANG, Shih-Che WANG
  • Publication number: 20200174374
    Abstract: A method for manufacturing a semiconductor device includes forming a forming a photoresist layer over a semiconductor substrate and selectively exposing the photoresist layer to actinic radiation. After selectively exposing the photoresist layer to actinic radiation, storing the semiconductor substrate in a semiconductor substrate container under an ambient of extreme dry clean air or inert gas. The method also includes after the storing the semiconductor substrate, performing a first heating of the photoresist layer.
    Type: Application
    Filed: November 26, 2019
    Publication date: June 4, 2020
    Inventors: Chun-Wei LIAO, Sheng-Wen Jiang, Jan-Liang YANG, Hui-Chun LEE