Abstract: The present disclosure discloses an organic light-emitting device, which includes a first electrode and a hole injection layer laminated with each other and formed an ohmic contact therebetween. The hole injection layer is characterized by a carrier mobility of less than 2×10?5 CM2V?1S?1.

Abstract: A thin-film encapsulation structure, includes a number of inorganic film layers and at least one organic film layer laminated alternately at one side of an organic light-emitting diode. The number of inorganic film layers include N inorganic film layers including first to N-th inorganic film layers arranged sequentially from inside to outside, N?2. At least the first inorganic film layer has a refractive index increasing gradually from inside to outside.

Abstract: Provided are a flexible electronic device and a manufacturing method thereof. The flexible electronic device (200) comprises a flexible substrate (210) and a device layer formed on the flexible substrate (210). The device layer comprises a semiconductor structure (220) and a wire structure (230) connected to the semiconductor structure, the wire structure (230) having an extension direction same to a channel direction of the semiconductor structure (220). The extension direction of the first wire structure (230) forms an included angle smaller than 90° with respect to a stretching direction of the flexible substrate (210).

Abstract: The present disclosure relates to a display panel and a display device. The display panel includes a display substrate and an encapsulating unit. The encapsulating unit is disposed on the display substrate, and the encapsulating unit includes at least one buffer layer. The buffer layer includes a buffer body and first buffer particles. The buffer body is deformable under an action of an external force thereby compressing the first buffer particles, and the first buffer particles are elastically deformable or capable of being crushed by compression.

Abstract: A display panel, a manufacturing method thereof, and a display device. The manufacturing method includes: providing a pretreatment solution containing a water-soluble organic protective agent, and forming, on an anode, a solution layer covering the anode; drying the solution layer to form an adhesive layer; removing the adhesive layer; and drying the anode; where the pretreatment solution contains 10-30% by weight of propylene glycol methyl ether and 70-90% by weight of water.

Abstract: Display panel, manufacturing method thereof, and display device are provided. As an example, the display panel includes a substrate, a TFT layer formed on the substrate, and an encapsulation layer formed on the TFT layer. The TFT layer includes a thin film transistor with a source electrode, a drain electrode and a gate electrode, and further includes a first metal layer, a first inorganic layer on the first metal layer, and a second metal layer on the first inorganic layer. The second metal layer includes a first region and a second region, a hollowed-out region is formed between the first region and the second region, and the first region and the second region are electrically connected via the first metal layer. A portion of the encapsulation layer that is located in the hollowed-out region is in contact with the first inorganic layer.

Abstract: The present disclosure provides a display panel, manufacturing method thereof, and a display device. The display panel includes a substrate, a functional layer formed on the substrate, and an encapsulation layer formed on the functional layer. The encapsulation layer includes an inorganic layer on the functional layer, the inorganic layer includes a first oxide layer and a second oxide layer, and a ratio of the number of atomic layers of the first oxide layer to the number of atomic layers of the second oxide layer ranges from 1:4 to 3:1.

Abstract: A display panel, a display device, and a method of manufacturing a display panel are provided. As an example, the display panel includes an array layer, a planarization layer, an inorganic layer, and at least one dam. The array layer includes a first region and a second region surrounding the first region. The planarization layer is at least partially located on a portion of the array layer which is at the first region. The inorganic layer is located on a portion of the array layer which is at the second region. The at least one dam is formed on the inorganic layer.

Abstract: The present disclosure discloses an organic light-emitting device and an electrode thereof. The electrode includes a first conductive layer, and further includes a second conductive layer laminated at a first side of the first conductive layer. The second conductive layer is a transparent conductive layer.

Abstract: The present disclosure relates to a display panel and a display device. The display panel includes a display substrate and an encapsulating unit. The encapsulating unit is disposed on the display substrate, and the encapsulating unit includes at least one buffer layer. The buffer layer includes a buffer body and first buffer particles. The buffer body is deformable under an action of an external force thereby compressing the first buffer particles, and the first buffer particles are elastically deformable or capable of being crushed by compression.

Abstract: The present disclosure relates to an organic electroluminescent device and a preparation method thereof. The organic electroluminescent device includes a hole injection layer including a first doped layer and/or a second doped layer. The first doped layer includes a P-type dopant, and the second doped layer includes a P-type dopant and a hole transport material. The organic electroluminescent device includes a hole transport layer formed on the hole injection layer, and an electron blocking layer formed on the hole transport layer. A difference in HOMO energy level between the electron blocking layer and the hole transport layer is less than or equal to 0.2 eV. The power consumption of the organic electroluminescent device can be reduced. The lifetime of the mass production device therefore can be increased.

Abstract: A wire and a method of manufacturing are provided the wire for use in an organic light emitting diode device includes three parts, a first part and a third part are located at both ends of the wire respectively and each of the first part and the third part is a single wire, a second part is located between the first part and the third part, and the second part is a composite wire, wherein the composite wire comprises at least two wires. By dividing a middle part of one wire into multiple wires, the purpose of changing a wire width of a single wire is achieved, ductility of the wire can be enhanced, thereby avoiding the occurrence of the problem that the device cannot normally work caused by wire fracture during folding, and improving the using efficiency of the device.

Abstract: A wire and a method of manufacturing are provided the wire for use in an organic light emitting diode device includes three parts, a first part and a third part are located at both ends of the wire respectively and each of the first part and the third part is a single wire, a second part is located between the first part and the third part, and the second part is a composite wire, wherein the composite wire comprises at least two wires. By dividing a middle part of one wire into multiple wires, the purpose of changing a wire width of a single wire is achieved, ductility of the wire can be enhanced, thereby avoiding the occurrence of the problem that the device cannot normally work caused by wire fracture during folding, and improving the using efficiency of the device.

Abstract: Provided are a flexible electronic device and a manufacturing method thereof. The flexible electronic device (200) comprises a flexible substrate (210) and a device layer formed on the flexible substrate (210). The device layer comprises a semiconductor structure (220) and a wire structure (230) connected to the semiconductor structure, the wire structure (230) having an extension direction same to a channel direction of the semiconductor structure (220). The extension direction of the first wire structure (230) forms an included angle smaller than 90° with respect to a stretching direction of the flexible substrate (210).