Abstract: An image sensor structure and a method of fabricating the structure are disclosed, in image sensor structure, at least one die is bonded to pixel substrate by bonding first bonding layer to second bonding layer, and the die includes signal processing circuit and/or storage device for photosensitive elements in pixel substrate. The die is bonded to the pixel substrate so that the signal processing circuit and/or storage device is/are coupled to photosensitive elements in pixel substrate. In this way, signal processing and/or storage functions of the image sensor can be provided without additional occupation of the area of the pixel substrate, allowing for more photosensitive elements to be arranged on the pixel substrate with the same area and thus resulting in a larger photosensitive area. Moreover, less wiring is needed on the 2D plane of the pixel substrate, helping in reducing interference with signals and delays and improving imaging quality.

Abstract: A method for stacking multi-layer wafers, and a system for stacking multi-layer wafers. The method includes bonding a wafer to a carrier wafer; a first feature pattern being defined in the wafer; acquiring overlay deviation values of different positions of the first feature pattern relative to the carrier wafer; fitting the overlay deviation values corresponding to the different positions and obtaining an actual deviation value of the wafer; and compensating an exposure process of the wafer based on the actual deviation value. In this way, an occurrence of the wafer failing to be exposed and being scrapped due to an alignment accuracy between the wafer and the carrier wafer being lower may be reduced.