Patents by Inventor Shengke Zhang

Shengke Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • THREE-TERMINAL BIDIRECTIONAL ENHANCEMENT MODE GaN SWITCH
    Publication number: 20240136408
    Abstract: A three-terminal bidirectional GaN FET with a single gate. The device is formed by integrating a single-gate bidirectional GaN FET in parallel with a bidirectional device formed of two back-to-back GaN FETs with a source that is connected to the field plate of the device and does not have a pin-out. Diodes or gate-shorted-to-source FETs are connected between the source without pin-out and the D/S and S/D power terminals of the device. In another embodiment, a single-gate bidirectional GaN FET is provided with diodes or gate-shorted-to-source FETs connected between the substrate and the power terminals of the device.
    Type: Application
    Filed: October 17, 2023
    Publication date: April 25, 2024
    Applicant: Efficient Power Conversion Corporation
    Inventors: Jianjun Cao, Gordon Stecklein, Edward Lee, Shengke Zhang