Abstract: A LED lighting device is disclosed, which includes a LED lighting source, a printed circuit board, a heat sink and a transparent cover. The LED lighting source is provided on the printed circuit board, and the cover is attached to the heat sink for protecting the LED lighting source and the printed circuit board. The LED lighting device further includes a rivet made of plastics, which is used to fix the printed circuit board to the heat sink.

Abstract: A light-emitting device having a cover (1), a heat sink (2) and a light-emitting assembly (3), wherein the heat sink (2) has at least one first locking part (a), the cover (1) has at least one second locking part (b) corresponding to the first locking part (a), the second locking part (b) engages with the first locking part (a) to form an enclosed cavity (5) for the light-emitting assembly (3), and the second locking part (b) has a pressing part (b1) pressing the light-emitting assembly (3) against the heat sink (2).

Abstract: Various embodiments may relate to a lighting device, including an electronic device housing, an electrical connecting part mounted at one side of the electronic device housing, a heat sink mounted at the other side of the electronic device housing, and a plurality of light sources arranged on the heat sink. The heat sink is made of a transparent material and forms at least a part of a light emergent surface for the light from the light sources.

Abstract: A lighting device may include a circuit board with at least one LED chip thereon, sidewalls extending from the circuit board, and a phosphor cover supported on the sidewalls, wherein the circuit board, the phosphor cover, and the sidewalls define a cavity accommodating at least one LED chip, wherein the lighting device further comprises at least one optical member arranged in the cavity, and the optical member has an adjustable reflectivity to adjust the spectral power distribution of emitted light through the phosphor cover and/or the CCT of the emitted light.

Abstract: A LED lighting device is disclosed, which includes a LED lighting source, a printed circuit board, a heat sink and a transparent cover. The LED lighting source is provided on the printed circuit board, and the cover is attached to the heat sink for protecting the LED lighting source and the printed circuit board. The LED lighting device further includes a rivet made of plastics, which is used to fix the printed circuit board to the heat sink.

Abstract: In various embodiments, a luminaire may include: two or more groups of light emitting elements, each group of light emitting elements having respective wavelength range; and a fluorescence component being capable of generating fluorescence under excitation of the light emitted from said light emitting elements, wherein said fluorescence component is spaced apart from said light emitting elements in a light propagation direction of said light emitting elements, and the light of each group of said light emitting elements is combined with said fluorescence into white light.

Abstract: In various embodiments, an LED luminary may include: a plurality of LED light emitting elements; and an installation component for installing the plurality of LED light emitting elements in the LED luminary, wherein the plurality of LED light emitting elements are installed so that the LED light emitting elements are not on the same plane. In various embodiments, a method for fabricating an LED luminary may include: preparing an installation component; and installing a plurality of LED light emitting elements in the LED luminary through the installation component so that the LED light emitting elements are not on the same plane.

Abstract: A lighting device may include a circuit board, at least one LED lighting chip provided on one side of the circuit board, and a phosphor layer arranged to enclose the LED lighting chip, wherein the phosphor layer has different thicknesses at different light emergence angles.

Abstract: A light-emitting device, comprising: a cover (1), a heat sink (2) and a light-emitting assembly (3), wherein the heat sink (2) has at least one first locking part (a), the cover (1) has at least one second locking part (b) corresponding to the first locking part (a), the second locking part (b) engages with the first locking part (a) to form an enclosed cavity (5) for the light-emitting assembly (3), and the second locking part (b) has a pressing part (b1) pressing the light-emitting assembly (3) against the heat sink (2).

Abstract: A method of making a thin gallium-nitride (GaN)-based semiconductor structure is provided. According to one embodiment of the invention, the method includes the steps of providing a substrate; sequentially forming one or more semiconductor layers on the substrate; etching a pattern in the one or more semiconductor layers; depositing a dielectrics layer; forming a photoresist on a portion of the dielectrics layer, wherein the portion of the dielectrics layer is deposited on the one or more semiconductor layers; depositing a primer; removing the photoresist layer, wherein the primer on the photoresist is also removed; depositing a superhard material, wherein the superhard material forms in the pattern; and removing the substrate. Accordingly, the superhard material may be selectively deposited in only areas where the superhard material is desired. Vertical GaN-based light emitting devices may then be formed by cutting the semiconductor structure.

Abstract: A light emitting diode device which, in use, has its light emitting region occupying a plane substantially perpendicular to a plane occupied by the surface on which the device is mounted. The primary light emission directions of the light emitting region are parallel to the surface on which the device is mounted. The device may have both its p-type and n-type semiconductor layers passivated by a layer or layers of light transmissive materials. There is a method for fabricating and mounting such a device. A plurality of the light emitting diode devices can be used in a lighting assembly for providing a plurality of independently controllable lit regions.

Abstract: A semiconductor device has a current spreading layer between a semiconductor material and an electrode for connecting the semiconductor material to an electrical power supply. The current spreading layer has two or more sub-layers of a first conductive material with patterned regions of a second conductive material distributed between the sub-layers for spreading an electrical current passing between the electrode and the semiconductor material. The second material has an ohmic resistance lower than the first material.

Abstract: A light emitting diode device includes a multi-layer stack of materials including a p-layer, a n-layer, and a light generating region for emission of light in a primary emission direction towards one of the p- and n-layers; a substantially transparent layer located at or adjacent said one of the p- and n-layers, having a first surface facing said one of the p- and n-layers and an opposed second surface; and a reflective surface formed at or adjacent the second surface of the transparent layer for directing at least a portion of the emitted light in a direction away from the primary emission direction so as to enhance light emission from a side of the light emitting diode device.

Abstract: A method of making a thin gallium-nitride (GaN)-based semiconductor structure is provided. According to one embodiment of the invention, the method includes the steps of providing a substrate; sequentially forming one or more semiconductor layers on the substrate; etching a pattern in the one or more semiconductor layers; depositing a dielectrics layer; forming a photoresist on a portion of the dielectrics layer, wherein the portion of the dielectrics layer is deposited on the one or more semiconductor layers; depositing a primer; removing the photoresist layer, wherein the primer on the photoresist is also removed; depositing a superhard material, wherein the superhard material forms in the pattern; and removing the substrate. Accordingly, the superhard material may be selectively deposited in only areas where the superhard material is desired. Vertical GaN-based light emitting devices may then be formed by cutting the semiconductor structure.

Abstract: A semiconductor device has a current spreading layer between a semiconductor material and an electrode for connecting the semiconductor material to an electrical power supply. The current spreading layer has two or more sub-layers of a first conductive material with patterned regions of a second conductive material distributed between the sub-layers for spreading an electrical current passing between the electrode and the semiconductor material. The second material has an ohmic resistance lower than the first material.

Abstract: A light source for a lighting device has a reflector for receiving one or more light emitting diode devices. The reflector has reflective sides and a light exit. There is a side emitting LED device located in the reflector such that its primary light emitting direction towards the reflective sides such that light emitted from the LED device are reflected towards the light exit.

Abstract: A light emitting diode device which, in use, has its light emitting region occupying a plane substantially perpendicular to a plane occupied by the surface on which the device is mounted. The primary light emission directions of the light emitting region are parallel to the surface on which the device is mounted. The device may have both its p-type and n-type semiconductor layers passivated by a layer or layers of light transmissive materials. There is a method for fabricating and mounting such a device. A plurality of the light emitting diode devices can be used in a lighting assembly for providing a plurality of independently controllable lit regions.

Abstract: A light emitting diode device includes a multi-layer stack of materials including a p-layer, a n-layer, and a light generating region for emission of light in a primary emission direction towards one of the p- and n-layers; a substantially transparent layer located at or adjacent said one of the p- and n-layers, having a first surface facing said one of the p- and n-layers and an opposed second surface; and a reflective surface formed at or adjacent the second surface of the transparent layer for directing at least a portion of the emitted light in a direction away from the primary emission direction so as to enhance light emission from a side of the light emitting diode device.