Abstract: An array substrate, a preparing method thereof, a display panel and a display apparatus are disclosed. The array substrate includes: a base substrate (1); a driving circuit structure (2) on the base substrate (1); a planarization layer (3) and a plurality of electrode structures (4) successively located on a side, facing away from the base substrate (1), of the driving circuit structure (2); insulation structures (5) in gap areas between adjacent electrode structures (4); and pixel defining structures (6) on a side, facing away from the base substrate (1), of the insulation structures (5). The thickness of the insulation structures (5) is not smaller than the thickness of the electrode structures (4). An orthographic projection of the pixel defining structures (6) on the base substrate (1) at least completely covers the insulation structures (5).

Abstract: A display panel includes a substrate, and a pixel defining layer and a cathode layer that are laminated on the substrate. The pixel defining layer includes a plurality of strip-shaped first pixel defining structures and a plurality of strip-shaped second pixel defining structures. A slope angle of the second pixel defining structure is greater than a slope angle of the first pixel defining structure, and the second pixel defining structure is configured to separate portions of the cathode layer on two sides of the second pixel defining structure.

Abstract: An array substrate, a preparing method thereof, a display panel and a display apparatus are disclosed. The array substrate includes: a base substrate (1); a driving circuit structure (2) on the base substrate (1); a planarization layer (3) and a plurality of electrode structures (4) successively located on a side, facing away from the base substrate (1), of the driving circuit structure (2); insulation structures (5) in gap areas between adjacent electrode structures (4); and pixel defining structures (6) on a side, facing away from the base substrate (1), of the insulation structures (5). The thickness of the insulation structures (5) is not smaller than the thickness of the electrode structures (4). An orthographic projection of the pixel defining structures (6) on the base substrate (1) at least completely covers the insulation structures (5).

Abstract: A method for manufacturing a light-emitting component, including forming an auxiliary electrode and a first electrode arranged at an interval on a base substrate; depositing, by means of a mask with a hollow area, a light-emitting layer on the base substrate on which the auxiliary electrode and the first electrode are formed; and forming a second electrode on the base substrate on which the light-emitting layer is formed. The light-emitting layer covers at least part of the first electrode, and at least a partial area of the auxiliary electrode is exposed outside the light-emitting layer. The second electrode covers at least part of the light-emitting layer and the at least partial area of the auxiliary electrode, and the second electrode is connected to the at least partial area of the auxiliary electrode.

Abstract: A display substrate and a manufacturing method thereof are disclosed. The display substrate is divided to have a non-pixel region and a color pixel region. The manufacturing method includes: forming a thin film transistor (TFT) on a base substrate in the non-pixel region; forming a passivation layer on the TFT; forming a color filter on the passivation layer in the color Pixel region; forming a planarization layer on the passivation layer and the color filter; thinning a thickness of a portion of the planarization layer located in the color pixel region; and forming a display electrode on the planarization layer and connecting the display electrode to a drain electrode of the TFT through a via hole.

Abstract: A display panel includes a substrate, and a pixel defining layer and a cathode layer that are laminated on the substrate. The pixel defining layer includes a plurality of strip-shaped first pixel defining structures and a plurality of strip-shaped second pixel defining structures. A slope angle of the second pixel defining structure is greater than a slope angle of the first pixel defining structure, and the second pixel defining structure is configured to separate portions of the cathode layer on two sides of the second pixel defining structure.

Abstract: The present disclosure provides an etching method, a manufacturing method of a thin film transistor, a process device and a display device. The etching method includes: forming a patterned photoresist layer on the surface of a material to be etched, the patterned photoresist layer exposing an area to be etched on the surface of the material to be etched; curing the photoresist layer by adopting a plasma process; and etching the material to be etched by adopting an etching solution corresponding to the material to be etched. The present disclosure can help to solve the problem of undercutting and improve the product yield and product performances.

Abstract: A display substrate and a manufacturing method thereof are disclosed. The display substrate is divided to have a non-pixel region and a color pixel region. The manufacturing method includes: forming a thin film transistor (TFT) on a base substrate in the non-pixel region; forming a passivation layer on the TFT; forming a color filter on the passivation layer in the color Pixel region; forming a planarization layer on the passivation layer and the color filter; thinning a thickness of a portion of the planarization layer located in the color pixel region; and forming a display electrode on the planarization layer and connecting the display electrode to a drain electrode of the TFT through a via hole.

Abstract: A method for manufacturing a light-emitting component, including forming an auxiliary electrode and a first electrode arranged at an interval on a base substrate; depositing, by means of a mask with a hollow area, a light-emitting layer on the base substrate on which the auxiliary electrode and the first electrode are formed; and forming a second electrode on the base substrate on which the light-emitting layer is formed. The light-emitting layer covers at least part of the first electrode, and at least a partial area of the auxiliary electrode is exposed outside the light-emitting layer. The second electrode covers at least part of the light-emitting layer and the at least partial area of the auxiliary electrode, and the second electrode is connected to the at least partial area of the auxiliary electrode.

Abstract: A fabrication method of a thin film transistor, a fabrication method of an array substrate, a display panel, and a display device are provided. The fabrication method of the thin film transistor comprises: forming a gate electrode, a gate insulating layer and an oxide active layer; forming an inverted trapezoidal dissolution layer whose cross section is inverted trapezoidal on the oxide active layer, the inverted trapezoidal dissolution layer being soluble in an organic solvent; forming a source/drain layer on the oxide active layer, the gate insulating layer and the inverted trapezoidal dissolution layer, a thickness of the inverted trapezoidal dissolution layer being greater than a thickness of the source/drain layer; and dissolving and removing the inverted trapezoidal dissolution layer with the organic solvent and removing the source/drain layer on the inverted trapezoidal dissolution layer, to form a source electrode and a drain electrode.

Abstract: An organic light emitting diode (OLED) display panel and a manufacture method thereof, a display device are disclosed. The method includes providing a base substrate, including a display area and a package area; forming a driving transistor, a passivation layer and an OLED display unit on the base substrate, wherein the OLED display unit and the driving transistor are formed in the display area, the passivation layer is formed in both the display area and the package area and includes a plurality of recesses in the package area and a via hole in the display area, and the via hole and the plurality of recesses are formed by same one patterning process; coating a sealant in the package area to cover the plurality of recesses; and providing a package substrate, the package substrate and the base substrate being assembled together and sealed oppositely by the sealant.

Abstract: An organic light emitting diode (OLED) display panel and a manufacture method thereof, a display device are disclosed. The method includes providing a base substrate, including a display area and a package area; forming a driving transistor, a passivation layer and an OLED display unit on the base substrate, wherein the OLED display unit and the driving transistor are formed in the display area, the passivation layer is formed in both the display area and the package area and includes a plurality of recesses in the package area and a via hole in the display area, and the via hole and the plurality of recesses are formed by same one patterning process; coating a sealant in the package area to cover the plurality of recesses; and providing a package substrate, the package substrate and the base substrate being assembled together and sealed oppositely by the sealant.

Abstract: A method for manufacturing a thin-film transistor (TFT), an array substrate and a display device are disclosed. The manufacturing method includes: forming a photoresist layer provided with a completely retained region, a partially-retained region and a completely removed region on a metal film by a half-tone mask process; forming a source/drain metal layer by etching the metal film under the cover of the photoresist layer; removing the photoresist layer in the partially-retained region; forming an active layer by patterning the semiconductor film; and removing residual photoresist layer.

Abstract: A fabrication method of a thin film transistor, a fabrication method of an array substrate, a display panel, and a display device are provided. The fabrication method of the thin film transistor comprises: forming a gate electrode, a gate insulating layer and an oxide active layer; forming an inverted trapezoidal dissolution layer whose cross section is inverted trapezoidal on the oxide active layer, the inverted trapezoidal dissolution layer being soluble in an organic solvent; forming a source/drain layer on the oxide active layer, the gate insulating layer and the inverted trapezoidal dissolution layer, a thickness of the inverted trapezoidal dissolution layer being greater than a thickness of the source/drain layer; and dissolving and removing the inverted trapezoidal dissolution layer with the organic solvent and removing the source/drain layer on the inverted trapezoidal dissolution layer, to form a source electrode and a drain electrode.

Abstract: A method for manufacturing a thin-film transistor (TFT), an array substrate and a display device are disclosed. The manufacturing method includes: forming a photoresist layer provided with a completely retained region, a partially-retained region and a completely removed region on a metal film by a half-tone mask process; forming a source/drain metal layer by etching the metal film under the cover of the photoresist layer; removing the photoresist layer in the partially-retained region; forming an active layer by patterning the semiconductor film; and removing residual photoresist layer.

Abstract: The embodiments of the present invention provide a color film substrate, a liquid crystal display panel and a display device; wherein the color film substrate comprises: a basal substrate, a black matrix and a plurality groups of color filters located on the basal substrate, and a planarization layer located on the black matrix and the color filters; each group of color filters comprises a red filter, a green filter, a blue filter and a blank region defined by the black matrix; the planarization layer filled in the blank region serves as a white filter; wherein the color film substrate further comprises: at least one linear height compensation component located in the blank region; the height compensation component and the black matrix are arranged in a same layer.