Abstract: An IHC ion source that employs a negatively biased cathode and one or more side electrodes is disclosed. The one or more side electrodes are left electrically unconnected in certain embodiments and are grounded in other embodiments. The floating side electrodes may be beneficial in the formation of certain species. In certain embodiments, a relay is used to allow the side electrodes to be easily switched between these two modes. By changing the configuration of the side electrodes, beam current can be optimized for different species. For example, certain species, such as arsenic, may be optimized when the side electrodes are at the same voltage as the chamber. Other species, such as boron, may be optimized when the side electrodes are left floating relative to the chamber. In certain embodiments, a controller is in communication with the relay so as to control which mode is used, based on the desired feed gas.

Abstract: An IHC ion source that employs a negatively biased cathode and one or more side electrodes is disclosed. The one or more side electrodes are biased using an electrode power supply, which supplies a voltage of between 0 and ?50 volts, relative to the chamber. By adjusting the output from the electrode power supply, beam current can be optimized for different species. For example, certain species, such as arsenic, may be optimized when the side electrodes are at the same voltage as the chamber. Other species, such as boron, may be optimized when the side electrodes are at a negative voltage relative to the chamber. In certain embodiments, a controller is in communication with the electrode power supply so as to control the output of the electrode power supply, based on the desired feed gas.

Abstract: An apparatus is provided. The apparatus may include a main chamber, an entrance tunnel, the entrance tunnel having an entrance axis extending into the main chamber; an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween, and an electrode assembly, disposed in the main chamber, and defining a beam path between the entrance tunnel and the exit tunnel. The electrode assembly may include an upper electrode, disposed on a first side of the beam path, and a plurality of lower electrodes, disposed on a second side of the beam path, the plurality of lower electrodes comprising at least three electrodes.

Abstract: Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.

Abstract: An IHC ion source that employs a negatively biased cathode and one or more side electrodes is disclosed. The one or more side electrodes are biased using an electrode power supply, which supplies a voltage of between 0 and ?50 volts, relative to the chamber. By adjusting the output from the electrode power supply, beam current can be optimized for different species. For example, certain species, such as arsenic, may be optimized when the side electrodes are at the same voltage as the chamber. Other species, such as boron, may be optimized when the side electrodes are at a negative voltage relative to the chamber. In certain embodiments, a controller is in communication with the electrode power supply so as to control the output of the electrode power supply, based on the desired feed gas.

Abstract: An IHC ion source that employs a negatively biased cathode and one or more side electrodes is disclosed. The one or more side electrodes are left electrically unconnected in certain embodiments and are grounded in other embodiments. The floating side electrodes may be beneficial in the formation of certain species. In certain embodiments, a relay is used to allow the side electrodes to be easily switched between these two modes. By changing the configuration of the side electrodes, beam current can be optimized for different species. For example, certain species, such as arsenic, may be optimized when the side electrodes are at the same voltage as the chamber. Other species, such as boron, may be optimized when the side electrodes are left floating relative to the chamber. In certain embodiments, a controller is in communication with the relay so as to control which mode is used, based on the desired feed gas.

Abstract: An apparatus is provided. The apparatus may include a main chamber, an entrance tunnel, the entrance tunnel having an entrance axis extending into the main chamber; an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween, and an electrode assembly, disposed in the main chamber, and defining a beam path between the entrance tunnel and the exit tunnel. The electrode assembly may include an upper electrode, disposed on a first side of the beam path, and a plurality of lower electrodes, disposed on a second side of the beam path, the plurality of lower electrodes comprising at least three electrodes.

Abstract: Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.

Abstract: An apparatus may include a main chamber, an entrance tunnel, having an entrance axis extending into the main chamber, and an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween. The apparatus may include an electrode assembly, disposed in the main chamber, on a lower side of the exit tunnel; and a catch assembly, disposed within the main chamber, in a line of sight from an exterior aperture of the exit tunnel.

Abstract: An apparatus is provided. The apparatus may include a main chamber; an entrance tunnel having a propagation axis extending into the main chamber along a first direction; an exit tunnel, connected to the main chamber and defining an exit direction. The entrance tunnel and the exit tunnel may define a beam bend of at least 30 degrees therebetween. The apparatus may include an electrode assembly, disposed in the main chamber, and defining a beam path between the entrance tunnel and the exit aperture, wherein the electrode assembly comprises a lower electrode, disposed on a first side of the beam path, and a plurality of electrodes, disposed on a second side of the beam path, the plurality of electrodes comprising at least five electrodes.

Abstract: An apparatus may include a main chamber, the main chamber comprising a plurality of electrodes; an entrance tunnel, the entrance tunnel having an entrance axis extending into the main chamber along a first direction; and an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance axis and the exit axis define a beam bend of at least 30 degrees therebetween.

Abstract: Provided herein are approaches for reducing particles in an ion implanter. An electrostatic filter may include a housing and a plurality of conductive beam optics within the housing. The conductive beam optics are arranged around an ion beam-line directed towards a wafer, and may include entrance aperture electrodes proximate an entrance aperture of the housing. The conductive beam optics may further include energetic electrodes downstream along the ion beam-line from the entrance aperture electrodes, and ground electrodes downstream from the energetic electrodes. The energetic electrodes are positioned farther away from the ion beam-line than the entrance electrodes and the ground electrodes, thus causing the energetic electrodes to be physically blocked from impact by an envelope of back-sputter material returning from the wafer. The electrostatic filter may further include an electrical system for independently delivering a voltage and a current to each of the conductive beam optics.

Abstract: An apparatus and method are provided. In one embodiment. an apparatus may include a main chamber, where the main chamber includes an electrode assembly. The electrode assembly may include a plurality of electrodes arranged between a chamber entrance and a chamber exit of the main chamber. The apparatus may include a beam tunnel, connected to the chamber entrance, configured to conduct an ion beam to the main chamber; and an electrostatic tuner, disposed in the beam tunnel, the electrostatic tuner comprising at least one tuner electrode, independently coupled to a tuner voltage assembly.

Abstract: An apparatus is provided. The apparatus may include a main chamber; an entrance tunnel having a propagation axis extending into the main chamber along a first direction; an exit tunnel, connected to the main chamber and defining an exit direction. The entrance tunnel and the exit tunnel may define a beam bend of at least 30 degrees therebetween. The apparatus may include an electrode assembly, disposed in the main chamber, and defining a beam path between the entrance tunnel and the exit aperture, wherein the electrode assembly comprises a lower electrode, disposed on a first side of the beam path, and a plurality of electrodes, disposed on a second side of the beam path, the plurality of electrodes comprising at least five electrodes.

Abstract: An apparatus is provided. The apparatus may include a main chamber, an entrance tunnel, the entrance tunnel having an entrance axis extending into the main chamber; an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween, and an electrode assembly, disposed in the main chamber, and defining a beam path between the entrance tunnel and the exit tunnel. The electrode assembly may include an upper electrode, disposed on a first side of the beam path, and a plurality of lower electrodes, disposed on a second side of the beam path, the plurality of lower electrodes comprising at least three electrodes.

Abstract: An apparatus may include a main chamber, an entrance tunnel, having an entrance axis extending into the main chamber, and an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween. The apparatus may include an electrode assembly, disposed in the main chamber, on a lower side of the exit tunnel; and a catch assembly, disposed within the main chamber, in a line of sight from an exterior aperture of the exit tunnel.

Abstract: An apparatus may include a main chamber, the main chamber comprising a plurality of electrodes; an entrance tunnel, the entrance tunnel having an entrance axis extending into the main chamber along a first direction; and an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance axis and the exit axis define a beam bend of at least 30 degrees therebetween.

Abstract: An apparatus and method are provided. In one embodiment. an apparatus may include a main chamber, where the main chamber includes an electrode assembly. The electrode assembly may include a plurality of electrodes arranged between a chamber entrance and a chamber exit of the main chamber. The apparatus may include a beam tunnel, connected to the chamber entrance, configured to conduct an ion beam to the main chamber; and an electrostatic tuner, disposed in the beam tunnel, the electrostatic tuner comprising at least one tuner electrode, independently coupled to a tuner voltage assembly.

Abstract: Provided herein are approaches for reducing particles in an ion implanter. An electrostatic filter may include a housing and a plurality of conductive beam optics within the housing. The conductive beam optics are arranged around an ion beam-line directed towards a wafer, and may include entrance aperture electrodes proximate an entrance aperture of the housing. The conductive beam optics may further include energetic electrodes downstream along the ion beam-line from the entrance aperture electrodes, and ground electrodes downstream from the energetic electrodes. The energetic electrodes are positioned farther away from the ion beam-line than the entrance electrodes and the ground electrodes, thus causing the energetic electrodes to be physically blocked from impact by an envelope of back-sputter material returning from the wafer. The electrostatic filter may further include an electrical system for independently delivering a voltage and a current to each of the conductive beam optics.

Abstract: An apparatus may include an electrode assembly, the electrode assembly comprising a plurality of electrodes, arranged in a plurality of electrode pairs arranged to conduct an ion beam therethrough. A given electrode pair lies along a radius of an arc describing a nominal central ray trajectory, wherein a radius of a first electrode pair and an adjacent electrode pair define an angular spacing. The plurality of electrode pairs may define a plurality of angular spacings, wherein, in a first configuration, the plurality of angular spacings are not all equal. The apparatus may also include a power supply in communication with the EM, the power supply configured to independently supply voltage to the plurality of electrodes.