Patents by Inventor Shi-Hao Hwang

Shi-Hao Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Strained silicon fin field effect transistor
    Publication number: 20040195624
    Abstract: Strained Si surrounding the SiGe embedded body on a SOI (silicon on insulator) substrate forms a novel FinFET. The mobility in the channel is enhanced due to strain of the Si channel. The strained Si FinFET includes a SOI substrate, an SiGe embedded body, a strained Si channel surrounding layer, an oxide layer, a poly Si gate electrode (or metal gate electrode), a source and a drain.
    Type: Application
    Filed: February 24, 2004
    Publication date: October 7, 2004
    Applicant: National Taiwan University
    Inventors: Chee-Wee Liu, Shu-Tong Chang, Shi-Hao Hwang