Abstract: A hearing aid for placement in an ear canal of a user, includes: a shell; a faceplate comprising an upper face, and a lower face, and a circumference, the upper face being exposed when the shell is placed in an ear of the user; a coil arranged at the faceplate; and a button arrangement comprising a plunger configured to control an integrated circuit arranged below the coil, the coil comprising one or more windings, the one or more windings being circumferential of an inner cavity of the coil with respect to a center or longitudinal axis of the coil, the button arrangement being configured such that the plunger in at least one position extends through the inner cavity of the coil for engaging the integrated circuit.

Abstract: Digital learning or tutoring systems as described herein embed, by a trained machine learning knowledge tracing engine, an array for learner interactions X into a static representation ej corresponding to a prior learner interaction xj and determine a contextualized interaction representation hj based on this. Digital tutoring systems described herein calculate, by a masked attention layer of the trained machine learning knowledge tracing engine, an attention weight Aij based on a time gap between two learner interactions with the system, and can calculate a contextualized interaction representation hj, wherein the contextualized interaction representation hj is proportional to the attention weight Aij. The systems can provide for display at the GUI a second question item based on the contextualized interaction representation hj, the second question item corresponding to a recommended learner recommendation.

Abstract: A system to detect gate-open failures in a MOS based insulated gate transistor can include a detection circuit, including a first circuit configured to measure a drain-source voltage across the MOS based insulated gate transistor, a first comparator circuit can be configured to compare the measured drain-source voltage to a threshold drain-source conduction voltage indicating a conduction state of a channel of the MOS based insulated gate transistor, a second circuit can be configured to measure a gate voltage applied at a gate of the MOS-based insulated gate transistor, a second comparator circuit can be configured to compare the gate voltage applied at the gate to a threshold gate voltage for the MOS based insulated gate transistor to provide an indication of whether the gate voltage applied at the gate is sufficient to activate conduction in the channel and a logic circuit can be configured to detect a gate-open failure of the MOS based insulated gate transistor based on the conduction state of the channel

Abstract: A system to detect gate-open failures in a MOS based insulated gate transistor can include a detection circuit, including a first circuit configured to measure a drain-source voltage across the MOS based insulated gate transistor, a first comparator circuit can be configured to compare the measured drain-source voltage to a threshold drain-source conduction voltage indicating a conduction state of a channel of the MOS based insulated gate transistor, a second circuit can be configured to measure a gate voltage applied at a gate of the MOS-based insulated gate transistor, a second comparator circuit can be configured to compare the gate voltage applied at the gate to a threshold gate voltage for the MOS based insulated gate transistor to provide an indication of whether the gate voltage applied at the gate is sufficient to activate conduction in the channel and a logic circuit can be configured to detect a gate-open failure of the MOS based insulated gate transistor based on the conduction state of the channel

Abstract: A method of measuring a junction temperature of a SiC MOSFET can be provided by applying a gate-source voltage to an external gate loop coupled to a gate of the SiC MOSFET, detecting a first time when the gate-source voltage exceeds a first value configured to disable conduction of a current in a drain of the SiC MOSFET, detecting, after the first time, a second time when a voltage across a common source inductance in a package of the SiC MOSFET indicates that the current in the drain is greater than a reference value, defining a time interval from the first time to the second time as a turn on delay time of the SiC MOSFET and determining the junction temperature for the SiC MOSFET using the turn on delay time.

Abstract: An in-the-ear hearing device includes: a microphone configured to receive an audio signal; a signal processor configured to process the audio signal for compensating a hearing loss; a wireless communication unit being connected to the signal processor; a feeding network; a hearing device shell accommodating the microphone and the signal processor; a face plate positioned at the hearing device shell; and an antenna for electromagnetic field emission and electromagnetic field reception, the antenna coupled with the wireless communications unit, wherein the antenna has a first end, and wherein the feeding network is configured to feed the antenna via the first end of the antenna; wherein the antenna extends through the face plate at a first position; at least a part of the antenna extending from the faceplate being arch-shaped; and wherein a second end of the antenna is an electrically open end, or is coupled to a ground potential.

Abstract: Embodiments according to the invention can provide methods of testing a SiC MOSFET, that can include applying first and second voltage levels across a gate-source junction of a SiC MOSFET and measuring first and second voltage drops across a reverse body diode included in the SiC MOSFET responsive to the first and second voltage levels, respectively, to provide an indication of a degradation of a gate oxide of the SiC MOSFET and an indication of contact resistance of the SiC MOSFET, respectively.

Abstract: A method of monitoring a condition of a SiC MOSFET can include (a) applying a first test gate-source voltage across a gate-source of a SiC MOSFET in-situ, the first test gate-source voltage configured to operate the SiC MOSFET in saturation mode to generate a first drain current in the SiC MOSFET, (b) applying a second test gate-source voltage across the gate-source of the SiC MOSFET in-situ, the second test gate-source voltage configured to operate the SiC MOSFET in fully-on mode to generate a second drain current in the SiC MOSFET, (c) determining a drain-source saturation resistance using the first drain current to provide an indication of a degradation of a gate oxide of the SiC MOSFET; and (d) determining a drain-source on resistance using the second drain current to provide an indication of a degradation of contact resistance of the SiC MOSFET.

Abstract: A hearing aid for placement in an ear canal of a user, includes: a shell; a faceplate comprising an upper face, and a lower face, and a circumference, the upper face being exposed when the shell is placed in an ear of the user; a coil arranged at the faceplate; and a button arrangement comprising a plunger configured to control an integrated circuit arranged below the coil, the coil comprising one or more windings, the one or more windings being circumferential of an inner cavity of the coil with respect to a center or longitudinal axis of the coil, the button arrangement being configured such that the plunger in at least one position extends through the inner cavity of the coil for engaging the integrated circuit.

Abstract: A hearing aid for placement in an ear canal of a user, includes: a shell; a faceplate comprising an upper face, and a lower face, and a circumference, the upper face being exposed when the shell is placed in an ear of the user; a coil arranged at the faceplate; and a button arrangement comprising a plunger configured to control an integrated circuit arranged below the coil, the coil comprising one or more windings, the one or more windings being circumferential of an inner cavity of the coil with respect to a center or longitudinal axis of the coil, the button arrangement being configured such that the plunger in at least one position extends through the inner cavity of the coil for engaging the integrated circuit.

Abstract: A method of measuring a junction temperature of a SiC MOSFET can be provided by applying a gate-source voltage to an external gate loop coupled to a gate of the SiC MOSFET, detecting a first time when the gate-source voltage exceeds a first value configured to disable conduction of a current in a drain of the SiC MOSFET, detecting, after the first time, a second time when a voltage across a common source inductance in a package of the SiC MOSFET indicates that the current in the drain is greater than a reference value, defining a time interval from the first time to the second time as a turn on delay time of the SiC MOSFET and determining the junction temperature for the SiC MOSFET using the turn on delay time.

Abstract: Digital learning or tutoring systems as described herein embed, by a trained machine learning knowledge tracing engine, an array for learner interactions X into a static representation ej corresponding to a prior learner interaction xj and determine a contextualized interaction representation hj based on this. Digital tutoring systems described herein calculate, by a masked attention layer of the trained machine learning knowledge tracing engine, an attention weight Aij based on a time gap between two learner interactions with the system, and can calculate a contextualized interaction representation hj, wherein the contextualized interaction representation hj is proportional to the attention weight Aij. The systems can provide for display at the GUI a second question item based on the contextualized interaction representation hj, the second question item corresponding to a recommended learner recommendation.

Abstract: A hearing aid for placement in an ear canal of a user, includes: a shell; a faceplate comprising an upper face, and a lower face, and a circumference, the upper face being exposed when the shell is placed in an ear of the user; a coil arranged at the faceplate; and a button arrangement comprising a plunger configured to control an integrated circuit arranged below the coil, the coil comprising one or more windings, the one or more windings being circumferential of an inner cavity of the coil with respect to a center or longitudinal axis of the coil, the button arrangement being configured such that the plunger in at least one position extends through the inner cavity of the coil for engaging the integrated circuit.

Abstract: Embodiments according to the invention can provide methods of testing a SiC MOSFET, that can include applying first and second voltage levels across a gate-source junction of a SiC MOSFET and measuring first and second voltage drops across a reverse body diode included in the SiC MOSFET responsive to the first and second voltage levels, respectively, to provide an indication of a degradation of a gate oxide of the SiC MOSFET and an indication of contact resistance of the SiC MOSFET, respectively.

Abstract: A method of monitoring a condition of a SiC MOSFET can include (a) applying a first test gate-source voltage across a gate-source of a SiC MOSFET in-situ, the first test gate-source voltage configured to operate the SiC MOSFET in saturation mode to generate a first drain current in the SiC MOSFET, (b) applying a second test gate-source voltage across the gate-source of the SiC MOSFET in-situ, the second test gate-source voltage configured to operate the SiC MOSFET in fully-on mode to generate a second drain current in the SiC MOSFET, (c) determining a drain-source saturation resistance using the first drain current to provide an indication of a degradation of a gate oxide of the SiC MOSFET; and (d) determining a drain-source on resistance using the second drain current to provide an indication of a degradation of contact resistance of the SiC MOSFET.

Abstract: An in-the-ear hearing device includes: a microphone configured to receive an audio signal; a signal processor configured to process the audio signal for compensating a hearing loss; a wireless communication unit being connected to the signal processor; a feeding network; a hearing device shell accommodating the microphone and the signal processor; a face plate positioned at the hearing device shell; and an antenna for electromagnetic field emission and electromagnetic field reception, the antenna coupled with the wireless communications unit, wherein the antenna has a first end, and wherein the feeding network is configured to feed the antenna via the first end of the antenna; wherein the antenna extends through the face plate at a first position; at least a part of the antenna extending from the faceplate being arch-shaped; and wherein a second end of the antenna is an electrically open end, or is coupled to a ground potential.