Abstract: The present invention provides a process for preparing carbon quantum dots having uniform size by using emulsion, and a process for doping the inside of the carbon structure with other element or replacing the surface with a surface stabilizer having a specific chemical functional group different from existing stabilizers in order to control the properties of the carbon quantum dots. The process for preparing the carbon quantum dots according to the present invention makes a mass production possible and the process thereof is simple. Furthermore, the process is easy to control the size of the quantum dots and the reaction yield rate of the method is excellent. In addition, according to the present invention, it is possible to synthesize carbon quantum dots having uniform size and superior quantum yield rate and it makes it possible to embody the color as equivalent to existing molecular chromophores or heavy metal quantum dots by changing the structure of the chromophore.

Abstract: In an organic thin film transistor array panel includes a source electrode and a drain electrode having a double layer including a metal and a metal oxide. The organic thin film transistor array panel is formed through a lift-off process or by using a shadow mask. The thin film transistor array panel has excellent characteristics and reduced manufacturing process costs.

Abstract: A bismuth yttrium titanate (BYT) film having the composition of formula (I) has enhanced residual polarization and electric fatigue properties with excellent ferroelectric property, and therefore, it can be advantageously used in an electric or electronic device including a FRAM device: Bi4-xYxTi3O12??(I) wherein x is an integer of 0.1 to 2.

Abstract: There are provided methods of fabricating a silicon-doped metal oxide layer on a semiconductor substrate using an atomic layer deposition technique. The methods include an operation of repeatedly performing a metal oxide layer formation cycle K times and an operation of repeatedly performing a silicon-doped metal oxide layer formation cycle Q times. At least one of the values K and Q is an integer of 2 or more. K and Q are integers ranging from 1 to about 10 respectively. The metal oxide layer formation cycle includes the steps of supplying a metal source gas to a reactor containing the substrate, and then injecting an oxide gas into the reactor. The silicon-doped metal oxide layer formation cycle includes supplying a metal source gas including silicon into a reactor containing the substrate, and then injecting an oxide gas into the reactor.

Abstract: A low dielectric constant hydrogenated silicon-oxycarbide (SiCO:H) film is prepared by bringing an organosilicon or organosilicate compound having at least one vinyl or ethynyl group, or a mixture of a saturated organosilicon or organosilicate compound and an unsaturated hydrocarbon into contact with a substrate in the presence of an O2-containing gas plasma.

Abstract: A lanthanum complex of formula (I) having a low evaporation temperature can be used as a useful precursor for MOCVD of a BLT thin layer on semiconductor devices. wherein A is pentamethyldiethylenetriamine(PMDT) or triethoxytriethyleneamine(TETEA).

Abstract: A low dielectric constant hydrogenated silicon-oxycarbide (SiCO:H) film is prepared by conducting chemical vapor deposition using, together with an O2-containing gas plasma, an organosilicon or organosilicate compound having at least one vinyl or ethinyl group, or a mixture of a saturated organosilicon or organosilicate compound and an unsaturated hydrocarbon.

Abstract: The present invention relates to an organometal complex and a chemical vapor deposition (CVD) or atomic layer deposition (ALD) method for preparing a metal silicate thin layer using same. The inventive method can easily prepare the metal silicate thin layer having a desired composition which can be effectively used as a gate insulating layer for various semiconductor devices.

Abstract: A bismuth yttrium titanate (BYT) film having the composition of formula (I) has enhanced residual polarization and electric fatigue properties with excellent ferroelectric property, and therefore, it can be advantageously used in an electric or electronic device including a FRAM device:

Abstract: A dielectric film is prepared by a process comprising a) forming a film on a substrate by depositing a reactant gas containing a precursor of the dielectric film using plasma; b) stopping the reactant gas supply and continuing the plasma treatment to form a dielectric layer from the precursor film; and repeating the steps of a) and b) until a desired thickness of the film is obtained.

Abstract: The present invention relates to an organometal complex and a chemical vapor deposition (CVD) or atomic layer deposition (ALD) method for preparing a metal silicate thin layer using same. The inventive method can easily prepare the metal silicate thin layer having a desired composition which can be effectively used as a gate insulating layer for various semiconductor devices.

Abstract: A lanthanum complex of formula (I) having a low evaporation temperature can be used as a useful precursor for MOCVD of a BLT thin layer on semiconductor devices.

Abstract: An organometallic complex of formula(I) having a low evaporation temperature can be used as a precursor for the MOCVD of a metal compound thin film on semiconductor devices wherein, M is Ti or Zr; R1, R2, R3 and R4 are each independently H or C1-4 alkyl; and m is an integer ranging from 2 to 5.

Abstract: A process for preparing a diffusion barrier on a semiconductor substrate which comprises: conducting remote plasma-enhanced metal organic chemical vapor deposition of a thin film of TiNx on said substrate using an organotitanium compound under a flow of H2 plasma, wherein x ranges from 0.1 to 1.5, provides a TiNx thin film having a low carbon content and low specific resistivity.

Abstract: A process for preparing a metallic interconnecting plug in a semiconductor device which comprises the steps of: i) forming an insulating layer on the surface of a semiconductor substrate or a metal underlayer of the semiconductor device, ii) forming a hole in the insulating layer to expose the surface of the semiconductor substrate or the metal underlayer, iii) exposing the surface of the insulating layer to the vapor of a blocking agent under a pressure ranging from 10.sup.

Abstract: A liquid organocuprous compound of formula (I) of the present invention can be conveniently used in a low-temperature CVD process for the production of a contaminant-free copper film having good step-coverage and hole-filling properties: ##STR1## wherein: R.sup.1 represents a C.sub.3-8 cycloalkyl group, andR.sup.2 and R.sup.3 are each independently a perfluorinated C.sub.1-4 alkyl group.