Patents by Inventor Shi Wun Tong

Shi Wun Tong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230243030
    Abstract: A method for forming a transition metal dichalcogenide monolayer, which includes depositing a transition metal, a transition metal oxide, or a mixture thereof, on a substrate, introducing a chalcogen precursor to the transition metal, the transition metal oxide, or the mixture thereof, in the presence of an etching gas and a carrier gas at a first temperature, to form a transition metal dichalcogenide on the substrate from the transition metal, the transition metal oxide, or the mixture thereof, and subliming the transition metal dichalcogenide on the substrate in the presence of a pulsating supply of a vapor of the chalcogen precursor to form the transition metal dichalcogenide monolayer at a second temperature, wherein the vapor of the chalcogen precursor comprises a chalcogen vapor.
    Type: Application
    Filed: June 28, 2021
    Publication date: August 3, 2023
    Inventors: Henry Medina Silva, Dongzhi Chi, Shi Wun Tong, Jianwei Chai, Shijie Wang
  • Publication number: 20220278276
    Abstract: Herein provided is a multilayered structure including one or more nanocrystalline layers each comprising a transition metal dichalcogenide, one or more substantially amorphous electrically insulating layers each comprising a transition metal oxide, wherein the transition metal oxide comprises a transition metal which is identical to the transition metal of the transition metal dichalcogenide, wherein the one or more nanocrystalline layers and the one or more substantially amorphous electrically insulating layers are formed in an alternating manner, and wherein each of the one or more nanocrystalline layers is formed adjacent to the substantially amorphous insulating layer. A resistive memory device comprising the multilayered structure and a process of fabricating the multilayered structure are also disclosed herein.
    Type: Application
    Filed: September 18, 2020
    Publication date: September 1, 2022
    Inventors: Henry MEDINA SILVA, Dongzhi CHI, Jianwei CHAI, Ming YANG, Shijie WANG, Shi Wun TONG, Carlos MANZANO
  • Publication number: 20140190550
    Abstract: A tandem solar cell with graphene interlayer and method of making are disclosed. The graphene interlayer can serve as a recombination contact to a pair of photoactive subcells electrically connected in series or as a common electrode to a pair of photoactive subcells electrically connected in parallel. The highly conducting, transparent nature, and easily modifiable chemical and electrical properties of a graphene interlayer enable tunable energy matching to the photoactive subcells. Using different photoactive subcells that can harvest light across the solar spectrum results in a tandem solar cell that can achieve high power conversion efficiency.
    Type: Application
    Filed: August 8, 2012
    Publication date: July 10, 2014
    Applicant: NATIONAL UNIVERSITY OF SINGAPORE
    Inventors: Kian Ping Loh, Shi Wun Tong, Yu Wang
  • Publication number: 20090021161
    Abstract: A simple and efficient method of increasing conductivity of the fluorocarbon film is disclosed. By illuminating the fluorocarbon film under ultraviolet light (UV-CFx), the film conductivity can be increased by five orders of magnitude. Devices using such a UV-treated, conductive fluorocarbon film as a buffer layer give much better performance in terms of lower operational voltage and enhanced operational stability. The improved smoothness and lowered hole injection barrier height with UV-CFx are responsible for the enhanced performance of electroluminescent devices.
    Type: Application
    Filed: September 30, 2008
    Publication date: January 22, 2009
    Applicant: City University of Hong Kong
    Inventors: Chun Sing LEE, Shuit-Tong LEE, Shi Wun TONG, Yeshayahu LIFSHITZ
  • Publication number: 20080199653
    Abstract: The present invention relates to a method of forming a two-dimensional pattern, which includes: dispersing a plurality of spheres on a substrate; using the spheres to form a mask on the substrate; etching the substrate; and removing the mask from the substrate. In addition, the present invention further relates to a method of processing a surface of a substrate, which includes: dispersing a plurality of spheres on the surface of the substrate; depositing a substance among the spheres; and removing the spheres to leave the deposited substance on the surface of the substrate. The method of the present invention achieves a quicker and simpler process with a lower cost. In addition, a light emitting device manufactured through the method of the present invention has preferred light extraction efficiency and a variable radiation field pattern.
    Type: Application
    Filed: August 28, 2007
    Publication date: August 21, 2008
    Applicant: Hong Kong Applied Science and Technology Research Institute Co. Ltd.
    Inventors: Hao-Chung Kuo, Shi Wun Tong, Hung-Shen Chu, Yong Cai