Abstract: Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of the specimen; and removing the mask, thereby forming a specified pattern of the electrodes. By this method, it is possible to form electrodes having high adhesion to diamond and diamond film for electronic devices.

Abstract: Disclosed is a spring steel for a high corrosion resistant and high strength, which exhibits an excellent drawability without softening heat treatment after hot rolling, and which has a strength of 1900 MPa or more by quenching and tempering and an excellent corrosion resistance. The spring steel contains elements of C, Si, Mn and Cr, and elements of Ni and/or Mo in suitable amounts, the balance being essentially Fe and inevitable impurities, wherein the elements satisfy the following requirement:2.5.ltoreq.(FP).ltoreq.4.52.0.ltoreq.(FP/log D).ltoreq.4.0where D is a diameter (mm) of the rolled material,and FP=(0.23?C!+0.1).times.(0.7?Si!+1).times.(3.5?Mn!+1) .times.(2.2?Cr!+1).times.(0.4?Ni!+1).times.(3?Mo!+1) in which ?element! represents mass % of the element.

Abstract: Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of the specimen; and removing the mask, thereby forming a specified pattern of the electrodes. By this method, it is possible to form electrodes having high adhesion to diamond and diamond film for electronic devices.

Abstract: Disclosed is a spring steel for a high corrosion resistant and high strength, which exhibits an excellent drawability without softening heat treatment after hot rolling, and which has a strength of 1900 MPa or more by quenching and tempering and an excellent corrosion resistance. The spring steel contains elements of C, Si, Mn and Cr, and elements of Ni and/or Mo in suitable amounts, the balance being essentially Fe and inevitable impurities, wherein the elements satisfy the following requirement:2.5.ltoreq.(FP).ltoreq.4.52.0.ltoreq.(FP/log D).ltoreq.4.0where D is a diameter (mm) of the rolled material, and FP=(0.23[C]+0.1).times.(0.7[Si]+1).times.(3.5[Mn]+1).times.(2.2[Cr]+1).tim es.(0.4[Ni]+1).times.(3[Mo]+1) in which [element] represents mass % of the element.

Abstract: A semiconducting diamond electroluminescence element comprises an electrically conductive substrate, a semiconducting diamond layer formed on the substrate, an insulating diamond layer formed on the semiconducting diamond layer, a front electrode formed on the insulating diamond layer, and a back electrode formed on the conductive substrate in ohmic contact with the same. The color of light to be emitted by the semiconducting diamond electroluminescence element can readily be determined by changing the impurity content in the semiconducting diamond layer. The luminescence intensity of the semiconducting diamond electroluminescence element can readily be changed by changing the voltage applied across the front and back electrodes without entailing dielectric breakdown.

Abstract: A method for forming diamond films by vapor phase synthesis comprising a process of forming the diamond films on a substrate by direct current discharge plasma, in an atmosphere of a reaction gas including a gas containing at least carbon and hydrogen, or in an atmosphere of a mixed gas containing at least a carbon-containing gas and a hydrogen gas, at a gas pressure between 0.1 and 5 Torr and a substrate temperature between 300.degree. and 1000.degree. C.

Abstract: A diamond heterojunction diode having an improved rectifying characteristics with a small reverse current and a large forward current. Three layers are formed on a low-resistance p-type silicon substrate by the microwave plasma CVD in the order of a B-doped p type semiconducting diamond layer, an insulating undoped diamond layer (thinner than 1 .mu.m), and an n-type semiconducting silicon layer. Ohmic electrodes are formed on the front side of a n-type semiconducting silicon layer and the back side of a substrate. Under a forward bias, the electric field is applied to the intermediate insulating layer to accelerate the transport of holes and electrons. Under a reversed bias, the energy band has a notch as well as a potential barrier due to the intermediate layer thus preventing holes from transporting from the n-type semiconducting diamond layer to the p-type semiconducting diamond layer, resulting in the improved rectifying characteristics.

Abstract: Described is an etching method of a diamond film which comprises providing a diamond film in an atmosphere of a gas containing at least oxygen and/or hydrogen and subjecting the diamond film to an irradiation of an electron beam generated by direct current discharge through a pattern of a mask. In this condition, when the diamond film is contacted with the plasma produced by the electron beam in the atmosphere, the unmasked areas are irradiated by the electron beam, and converted to graphite. The graphite is more readily etched by the plasma, so that the diamond film can be etched at a high rate. The etching through a mask ensures a fine etched pattern of the diamond film. In addition, a diamond film with a large area can be etched by this method.

Abstract: Disclosed herein is a MIS type diamond field-effect transistor comprising a diamond semiconductor layer provided as an active layer by chemical vapor deposition (CVD), and a diamond insulator layer provided on the diamond semiconductor layer also by CVD, a gate electrode being formed on the diamond insulator layer, wherein a diamond insulator undercoat is provided on a non-diamond substrate by CVD, and the diamond semiconductor layer and the diamond insulator layer are sequentially provided on the diamond insulator undercoat. The MIS type diamond field-effect transistor with this structure ensures that in the manufacture thereof, a diamond insulator undercoat of large area can be formed on a non-diamond substrate of CVD, whereby a large number of elemental devices can be fabricated simultaneously.