Abstract: A photopolymerization sensitizer may not cause problems of dusting or coloring of a cured product due to bleeding of additives such as the photopolymerization sensitizer on the surface, e.g., by blooming at the time of photo-curing or during storage of the cured product, and which provides a practically sufficient photo-curing rate. A 9,10-bis(alkoxycarbonylalkyleneoxy)anthracene compound having ester groups, of formula (I): wherein A is a C1-20 alkylene group, optionally branched by an alkyl group, R is a C1-20 alkyl group, optionally branched by the alkyl group, the C1-20 alkyl group optionally being a cycloalkyl group or a cycloalkylalkyl group, and X and Y are independently a hydrogen, a C1-8 alkyl group, or a halogen.

Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second through holes, a first metal film provided on one surface of the capacitive insulating film, and a second metal film provided on the other surface of the capacitive insulating film. The first and second metal films are made of different metal materials from each other. The first metal film is divided into a first area positioned outside the first space and a second area positioned inside the first space. The second metal film is divided into a third area positioned outside the second space and a fourth area positioned inside the second space. The third area is connected to the second area through the first through hole. The fourth area is connected to the first area through the second through hole.

Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second through holes, a first metal film provided on one surface of the capacitive insulating film, and a second metal film provided on the other surface of the capacitive insulating film. The first and second metal films are made of different metal materials from each other. The first metal film is divided into a first area positioned outside the first space and a second area positioned inside the first space. The second metal film is divided into a third area positioned outside the second space and a fourth area positioned inside the second space. The third area is connected to the second area through the first through hole. The fourth area is connected to the first area through the second through hole.

Abstract: An electronic device sheet, comprising a pair of electrodes, a dielectric layer provided between the pair of electrodes, and one or more insulation patch members provided on one of principal surfaces of the dielectric layer, wherein the insulation patch member includes a boundary line having an undulating shape.

Abstract: The electronic device sheet comprises a pair of electrode layers, a dielectric layer provided between the pair of electrode layers, and one or more insulation patch members provided on one of principal surfaces of the dielectric layer, wherein the number of the insulation patch members is 1 or more and 1000 or less per 1 cm2 of the principal surface, and the total area of the insulation patch members is 10 ?m2 or larger and 3 mm2 or smaller per 1 cm2 of the principal surface.

Abstract: A thin film capacitor comprises: a laminated body that has a base electrode, a dielectric layer and an upper electrode layer; a protective layer covering the base electrode, the dielectric layer and the upper electrode layer, and includes a first through-hole that reaches the base electrode, and a second through-hole that reaches the upper electrode layer; a first extraction electrode in the first through-hole and electrically connected with the base electrode; a second extraction electrode in the second through-hole and electrically connected with the upper electrode layer; a first terminal electrode on the protective layer, and connected with the base electrode through the first extraction electrode; and a second terminal electrode on the protective layer, and connected with the upper electrode layer through the second extraction electrode. Young's modulus of the protective layer is equal to or higher than 0.1 GPa and equal to or lower than 2.0 GPa.

Abstract: A thin film capacitor includes a lower electrode layer, an upper electrode layer, and a dielectric substance layer provided between the lower electrode layer and the upper electrode layer. A dielectric patch member formed of a dielectric material is formed on a surface of the dielectric substance layer on an upper electrode layer side, a cross-sectional structure of the dielectric patch member has a taper angle of 1 to 25 degrees in a cross section perpendicular to the dielectric substance layer, the taper angle being an angle formed by (1) a tangential line tangent to an end portion of the dielectric patch member at a position that is 50% of a maximum height of the dielectric patch member and (2) a line being an interface between the dielectric substance layer and the upper electrode layer, and an area of the dielectric patch member is 100 to 900000 ?m2.

Abstract: A thin film capacitor includes a pair of electrode layers, a dielectric layer existing between the pair of electrode layers, and a ceramic layer disposed on a surface opposite to the dielectric layer of at least one of the electrode layers.

Abstract: An electronic device sheet, comprising a pair of electrodes, a dielectric layer provided between the pair of electrodes, and one or more insulation patch members provided on one of principal surfaces of the dielectric layer, wherein the insulation patch member includes a boundary line having an undulating shape.

Abstract: The electronic device sheet comprises a pair of electrode layers, a dielectric layer provided between the pair of electrode layers, and one or more insulation patch members provided on one of principal surfaces of the dielectric layer, wherein the number of the insulation patch members is 1 or more and 1000 or less per 1 cm2 of the principal surface, and the total area of the insulation patch members is 10 ?m2 or larger and 3 mm2 or smaller per 1 cm2 of the principal surface.

Abstract: A thin film capacitor including a lower electrode layer, a dielectric layer provided on the lower electrode layer, and an upper electrode layer formed on the dielectric layer, wherein the dielectric layer includes a recessed portion in a portion on the upper face thereof, a cross-sectional structure perpendicular to the dielectric layer of the recessed portion has a cross-sectional taper angle of 1 degree or more and 25 degrees or less, and the distance between the bottom portion center and an outermost portion of the recessed portion is 20 times or more and 150 times or less a thickness of the dielectric layer.

Abstract: The present invention aims at providing a storage subsystem capable of improving a backend-side I/O processing performance and enabling a single semiconductor memory adapter to be replaced at a time. Therefore, the present invention provides one or more semiconductor memory adapter boards mounting semiconductor memories each having smaller capacity than SSDs attached detachably to a drive canister, a wide port connection established to access the semiconductor memories, the semiconductor memories used as a read cache area of HDDs, and further adopts a wind direction control structure for ensuring a cooling wind path to the HDDs when an adapter board is attached.

Abstract: A thin film capacitor comprises: a laminated body that has a base electrode, a dielectric layer and an upper electrode layer; a protective layer covering the base electrode, the dielectric layer and the upper electrode layer, and includes a first through-hole that reaches the base electrode, and a second through-hole that reaches the upper electrode layer; a first extraction electrode in the first through-hole and electrically connected with the base electrode; a second extraction electrode in the second through-hole and electrically connected with the upper electrode layer; a first terminal electrode on the protective layer, and connected with the base electrode through the first extraction electrode; and a second terminal electrode on the protective layer, and connected with the upper electrode layer through the second extraction electrode. Young's modulus of the protective layer is equal to or higher than 0.1 GPa and equal to or lower than 2.0 GPa.

Abstract: A thin film capacitor comprising a lower electrode layer, an upper electrode layer, and a dielectric substance layer provided between the lower electrode layer and the upper electrode layer, wherein a dielectric patch member formed of a dielectric material is formed on a surface of the dielectric substance layer on an upper electrode layer side, a cross-sectional structure of the dielectric patch member has a taper angle of 1 to 25 degrees in a cross section perpendicular to the dielectric substance layer, the taper angle being an angle formed by (1) a tangential line tangent to an end portion of the dielectric patch member at a position that is 50% of a maximum height of the dielectric patch member and (2) a line being an interface between the dielectric substance layer and the upper electrode layer, and an area of the dielectric patch member is 100 to 900000 ?m2.

Abstract: A thin film capacitor includes a pair of electrode layers, a dielectric layer existing between the pair of electrode layers, and a ceramic layer disposed on a surface opposite to the dielectric layer of at least one of the electrode layers.

Abstract: A thin film capacitor including a lower electrode layer, a dielectric layer provided on the lower electrode layer, and an upper electrode layer formed on the dielectric layer, wherein the dielectric layer includes a recessed portion in a portion on the upper face thereof, a cross-sectional structure perpendicular to the dielectric layer of the recessed portion has a cross-sectional taper angle of 1 degree or more and 25 degrees or less, and the distance between the bottom portion center and an outermost portion of the recessed portion is 20 times or more and 150 times or less a thickness of the dielectric layer.

Abstract: The present invention aims at providing a storage subsystem capable of improving a backend-side I/O processing performance and enabling a single semiconductor memory adapter to be replaced at a time. Therefore, the present invention provides one or more semiconductor memory adapter boards mounting semiconductor memories each having smaller capacity than SSDs attached detachably to a drive canister, a wide port connection established to access the semiconductor memories, the semiconductor memories used as a read cache area of HDDs, and further adopts a wind direction control structure for ensuring a cooling wind path to the HDDs when an adapter board is attached.

Abstract: A storage apparatus S comprises a disk controller for controlling data I/O processing between a host H and a disk unit. The disk controller includes a plurality of circuit board modules each having a circuit board and a module case storing the same, and a chassis shaped like a hollow cylinder having a front side opening and a rear side opening and configured to store the circuit board modules from the front and rear side openings. A CM module is configured to introduce cooling air from a cooling fan through an opening provided on at least one side surface toward a circuit component mounted on the circuit board. A MP module is configured to introduce cooling air by a cooling fan through an opening provide on a front surface of the module case.

Abstract: There is provided a compound represented by the following formula (1): wherein each of R1a to R1k independently represents a hydrogen atom or a monovalent substituent, the substituents may combine with each other to form a ring, each of M1a and M1b independently represents a hydrogen atom or a monovalent counter cation, Y1 represents a nitrogen atom or a carbon atom having a hydrogen atom or monovalent substituent, A1 represents an aromatic group, and the aromatic group represented by A1 may contain a heteroatom or may have a substituent.

Abstract: There is provided an aqueous solution containing (a) a preservative and (b) at least one azo compound represented by the following Formula (1) or a salt thereof, in which the content of (b) is 1% by mass to 25% by mass. (In Formula (1), G represents a nitrogen atom or —C(R2)?. R2 represents a hydrogen atom, a sulfo group, a carboxyl group, a substituted or unsubstituted carbamoyl group or a cyano group. X1, X2, X3, X4, X5, X6 and X7 each independently represents a hydrogen atom or a monovalent substituent. Y2, Y3 and Y4 each independently represents a hydrogen atom or a monovalent substituent. Y2, Y3 and Y4 may be bonded with each other to form a ring. All of Y2, Y3 and Y4 do not represent hydrogen atoms at the same time. M each independently represents a hydrogen atom or a monovalent countercation.