Abstract: The upper end of a gate electrode is situated below the surface of a semiconductor substrate. An insulating layer is formed over the gate electrode and over the semiconductor substrate situated at the periphery thereof. The insulating layer has a first insulating film and a low oxygen permeable insulating film. The first insulating film is, for example, an NSG film and the low oxygen permeable insulating film is, for example, an SiN film. Further, a second insulating film is formed over the low oxygen permeable insulating film. The second insulating film is, for example, a BPSG film. The TDDB resistance of a vertical MOS transistor is improved by processing with an oxidative atmosphere after forming the insulating layer. Further since the insulating layer has the low oxygen permeable insulating film, fluctuation of the threshold voltage of the vertical MOS transistor can be suppressed.

Abstract: The upper end of a gate electrode is situated below the surface of a semiconductor substrate. An insulating layer is formed over the gate electrode and over the semiconductor substrate situated at the periphery thereof. The insulating layer has a first insulating film and a low oxygen permeable insulating film. The first insulating film is, for example, an NSG film and the low oxygen permeable insulating film is, for example, an SiN film. Further, a second insulating film is formed over the low oxygen permeable insulating film. The second insulating film is, for example, a BPSG film. The TDDB resistance of a vertical MOS transistor is improved by processing with an oxidative atmosphere after forming the insulating layer. Further since the insulating layer has the low oxygen permeable insulating film, fluctuation of the threshold voltage of the vertical MOS transistor can be suppressed.

Abstract: The upper end of a gate electrode is situated below the surface of a semiconductor substrate. An insulating layer is formed over the gate electrode and over the semiconductor substrate situated at the periphery thereof. The insulating layer has a first insulating film and a low oxygen permeable insulating film. The first insulating film is, for example, an NSG film and the low oxygen permeable insulating film is, for example, an SiN film. Further, a second insulating film is formed over the low oxygen permeable insulating film. The second insulating film is, for example, a BPSG film. The TDDB resistance of a vertical MOS transistor is improved by processing with an oxidative atmosphere after forming the insulating layer. Further since the insulating layer has the low oxygen permeable insulating film, fluctuation of the threshold voltage of the vertical MOS transistor can be suppressed.

Abstract: In order to suppress variation of a resist pattern size caused by a temperature unevenness at a prebaking process, applying a resist of a positive type or a negative type on a base substrate, prebaking, exposing, post-exposure baking, and forming the resist to be a predetermined shape by developing the resist are carried out. The prebaking is carried out at a temperature equal to or more than a detachment starting temperature of a protective group of a base resin included in the resist in a case where the resist is the positive type. In a case where the resist is the negative type, the prebaking is carried out at a temperature equal to or more than a cross-linking starting temperature of a cross-linker in a base resin included in the resist.

Abstract: The upper end of a gate electrode is situated below the surface of a semiconductor substrate. An insulating layer is formed over the gate electrode and over the semiconductor substrate situated at the periphery thereof. The insulating layer has a first insulating film and a low oxygen permeable insulating film. The first insulating film is, for example, an NSG film and the low oxygen permeable insulating film is, for example, an SiN film. Further, a second insulating film is formed over the low oxygen permeable insulating film. The second insulating film is, for example, a BPSG film. The TDDB resistance of a vertical MOS transistor is improved by processing with an oxidative atmosphere after forming the insulating layer. Further since the insulating layer has the low oxygen permeable insulating film, fluctuation of the threshold voltage of the vertical MOS transistor can be suppressed.

Abstract: The manufacturing method includes: forming a seed film on a semiconductor chip; forming a photoresist having an opening above an electrode of the semiconductor chip on the seed film; forming a first Au bump on the seed film in the opening by electrolytic plating with a current density of 1.5 A/dm2 or above; grinding a surface of the first Au bump; stripping the photoresist; and removing the seed film by dry-etching.

Abstract: The manufacturing method includes: forming a seed film on a semiconductor chip; forming a photoresist having an opening above an electrode of the semiconductor chip on the seed film; forming a first Au bump on the seed film in the opening by electrolytic plating with a current density of 1.5 A/dm2 or above; grinding a surface of the first Au bump; stripping the photoresist; and removing the seed film by dry-etching.

Abstract: In order to suppress variation of a resist pattern size caused by a temperature unevenness at a prebaking process, applying a resist of a positive type or a negative type on a base substrate, prebaking, exposing, post-exposure baking, and forming the resist to be a predetermined shape by developing the resist are carried out. The prebaking is carried out at a temperature equal to or more than a detachment starting temperature of a protective group of a base resin included in the resist in a case where the resist is the positive type. In a case where the resist is the negative type, the prebaking is carried out at a temperature equal to or more than a cross-linking starting temperature of a cross-linker in a base resin included in the resist.