Patents by Inventor Shigehiro Ohnuma

Shigehiro Ohnuma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6642714
    Abstract: A thin-film magnetic field sensor is provided which includes two arms of a bridge circuit formed of a first element having a giant-magneto-resistant thin-film, and soft magnetic thin-films disposed one on either side thereof, with electrical terminals, and a second element having a giant-magneto-resistant thin-film, and conductive films disposed one on either side thereof, with electrical terminals. The electrical resistance value of the second element has sensitivity relative to the magnetic field, such that it is substantially zero when the magnetic field is small, but it changes equally to the first element due to causes other than the magnetic field. Since the output of the bridge circuit is in proportion to the difference in electrical resistance values between the first and second elements, part of a change due to causes other than the magnetic field is canceled in the output of the bridge circuit, whereby the magnetic field value can be accurately measured.
    Type: Grant
    Filed: August 22, 2002
    Date of Patent: November 4, 2003
    Assignee: The Research Institute for Electric and Magnetic Materials
    Inventors: Nobukiyo Kobayashi, Takeshi Yano, Shigehiro Ohnuma, Kiwamu Shirakawa, Tsuyoshi Masumoto
  • Publication number: 20030042902
    Abstract: There is provided a thin-film magnetic field sensor, which has a simple structure and a high detecting sensitivity, and reduces measurement errors due to temperature variation or the like. In the thin-film magnetic field sensor according to the present invention, two arms of a bridge circuit are formed of an element 5 having a giant-magneto-resistant thin-film, and soft magnetic thin-films disposed one on either side thereof, with electrical terminals, and an element 10 having a giant-magneto-resistant thin-film, and conductive films disposed one on either side thereof, with electrical terminals. The electrical resistance value of the element 10 has sensitivity relative to the magnetic field, such that it is substantially zero when the magnetic field is small, but it changes equally to the element 5 due to causes other than the magnetic field.
    Type: Application
    Filed: August 22, 2002
    Publication date: March 6, 2003
    Applicant: THE RESEARCH INSTITUTE FOR ELECTRIC AND MAGNETIC MATERIALS
    Inventors: Nobukiyo Kobayashi, Takeshi Yano, Shigehiro Ohnuma, Kiwamu Shirakawa, Tsuyoshi Masumoto
  • Patent number: 4688130
    Abstract: A perpendicular magnetic recording medium is formed of a substrate having 5.times.10.sup.5 -5.times.10.sup.9 fine projections per mm.sup.2 on the surface thereof, said projections having heights in the range of 0.01-10 .mu.m and diameters in the range of 0.01-1 .mu.m, and a ferromagnetic material deposited uniformly in a columnar form on the projections. The recording medium is produced by providing in advance fine projections, the heights and diameters of which are 0.01-10 .mu.m and 0.01-1 .mu.m respectively, on the surface of a substrate to a density of 5.times.10.sup.5 -5.times.10.sup.9 projections per mm.sup.2, and then causing a ferromagnetic material to deposit on the substrate from a vapor phase in such a way that the deposited material is preferentially allowed to adhere onto the projections and then to grow the ferromagnetic material in a direction perpendicular to the plane of the substrate.
    Type: Grant
    Filed: August 19, 1985
    Date of Patent: August 18, 1987
    Assignee: Research Development Corporation of Japan
    Inventors: Yukio Nakanouchi, Shigehiro Ohnuma, Tsuyoshi Masumoto
  • Patent number: 4584078
    Abstract: A method of producing fine particles with a particle size of submicron or finer which comprises the steps of:forming closely fine projections on a substrate surface, preferably by sputter-etching using an ionized gas; and thensputtering metallic or non-metallic materials onto the thus treated substrate in an inert gas or a mixed gas of an inert gas and a reactive gas, such as oxygen, the gas pressure of the inert gas or the mixed gas being in the range of from 1.times.10.sup.-4 torr to 1.times.10.sup.-1 torr, and thereby depositing the purposed fine particles in crystalline or amorphous form. The invention method can successfully provide fine particles with desired properties, for example, in size, shape and structure, by adjusting producing conditions or selection of substrate materials and the thus obtained fine particles are very useful in various applications with or without the substrate.
    Type: Grant
    Filed: August 1, 1984
    Date of Patent: April 22, 1986
    Assignees: Yukio Nakanouchi, Shigehiro Ohnuma, Tsuyoshi Masumoto, Research Development Corporation of Japan
    Inventors: Yukio Nakanouchi, Shigehiro Ohnuma, Tsuyoshi Masumoto